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公开(公告)号:US20240177768A1
公开(公告)日:2024-05-30
申请号:US18350416
申请日:2023-07-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seungchul JUNG , Seok Ju YUN , Soon-Wan KWON
IPC: G11C11/412 , H03K19/20 , H03K19/21
CPC classification number: G11C11/412 , H03K19/20 , H03K19/215
Abstract: An apparatus includes a static random access memory (SRAM) cell including a first inverter and a second inverter, and a third inverter including a first inverter transistor and a second inverter transistor. An output terminal of the first inverter is connected to a source terminal of the second inverter transistor.
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公开(公告)号:US20220343147A1
公开(公告)日:2022-10-27
申请号:US17408951
申请日:2021-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Soon-Wan KWON , Minje KIM , Sang Joon KIM
Abstract: A neural network apparatus includes: a first processing circuit and a second processing circuit each configured to perform a vector-by-matrix multiplication (VMM) operation on a weight and an input activation; a first register configured to store an output of the first processing circuit; an adder configured to add an output of the first register and an output of the second processing circuit; a second register configured to store an output of the adder; and an input circuit configured to input a same input activation to the first processing circuit and the second processing circuit and control the first processing circuit and the second processing circuit.
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公开(公告)号:US20240419628A1
公开(公告)日:2024-12-19
申请号:US18512788
申请日:2023-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungwoo LEE , Soon-Wan KWON , Seok Ju YUN
Abstract: Provided are a digital signal processor (DSP) and an electronic device using the same. The DSP includes: a first function unit (FU) having a non-IMC (in-memory computing) operation architecture using an operation unit; a second FU having an IMC architecture using a memory cell array; and a register file used by the first FU and the second FU.
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公开(公告)号:US20240241694A1
公开(公告)日:2024-07-18
申请号:US18355046
申请日:2023-07-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Daekun YOON , Soon-Wan KWON , Seok Ju YUN , Jaehyuk LEE , Dong-Jin CHANG
CPC classification number: G06F7/5443 , G06F7/501 , G11C7/1012
Abstract: Disclosed is an in-memory computing device and method. The in-memory computing device includes: a memory unit including bit cells configured to store first input data having a reference-bit-count, receive second input data also having the reference-bit-count, and perform a multiplication operation between the first input data and the second input data; and an operation unit including: a first adder tree configured to output intermediate operation results by adding results of performing the multiplication operation output with respect to each of the bit cells; a branch module configured to branch the intermediate operation results according to an operation mode of the in-memory computing device; and a second adder tree configured to output a final operation result based on an output of the branch module.
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公开(公告)号:US20240241691A1
公开(公告)日:2024-07-18
申请号:US18524520
申请日:2023-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chang-Woo SHIN , Soon-Wan KWON , Seijoon KIM , Hyunsoo KIM , Seungkeun YOON
IPC: G06F5/01
CPC classification number: G06F5/01
Abstract: An electronic device and method with data scaling is provided herein. The electronic device may include a computing device that includes an analog computing circuit, where the computing device may scale an input of the analog computing circuit using a first scaling factor and/or scale a weight of the analog computing circuit using a second scaling factor, where the input includes a plurality of input values within a preset input maximum range of values of the computing device, and the weight includes a plurality of weight values within a preset weight maximum range of values of the computing device, and rescale an output of the analog computing circuit based on the first scaling factor and/or the second scaling factor. The first and second scaling factors may respectively scale values of the input and the weight to exceed respective preset maximum ranges of values.
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公开(公告)号:US20240112708A1
公开(公告)日:2024-04-04
申请号:US18108737
申请日:2023-02-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungwoo LEE , Soon-Wan KWON , Seungchul JUNG
CPC classification number: G11C7/1084 , G06F7/5443 , G11C7/12 , G11C11/54
Abstract: A computational memory device and a method using the computational memory device are provided. The computational memory device includes memory banks configured to store weight data of a neural network model and a weight memory block configured to provide at least some of the weight data from memory banks in response to a weight request, a computational memory block physically stacked on the weight memory block such faces of the respective blocks face each other, the computational memory block configured to perform a multiply-accumulate (MAC) operation between the at least some of the weight data and at least some of input data by using a bit cell array including bit cells, and a communication interface configured to perform communication between the weight memory block and the computational memory block.
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公开(公告)号:US20240061649A1
公开(公告)日:2024-02-22
申请号:US18306686
申请日:2023-04-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Soon-Wan KWON , Seok Ju YUN , Seungchul JUNG
CPC classification number: G06F7/5443 , G06F7/5277 , G11C7/1069
Abstract: An in-memory computing (IMC) processor includes IMC macros, and includes a static random access memory (SRAM) IMC device including the plurality of IMC macros, and configured to perform a multiply and accumulate (MAC) operation between input data and first weight data of a first weight map applied to a first of IMC macros in a first direction in which an input feature map including the input data is written to the first IMC macro, and a two-dimensional (2D) shift accumulator configured to perform a shift operation on partial sums corresponding to respective MAC operation results of the IMC macros and accumulate a result of the shift operation.
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公开(公告)号:US20250166702A1
公开(公告)日:2025-05-22
申请号:US18947724
申请日:2024-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaehyuk LEE , Soon-Wan KWON , Sang Joon KIM , Sungmeen MYUNG , Boyoung SEO , Seok Ju YUN , Kangho LEE
IPC: G11C13/00
Abstract: A non-volatile memory device includes a memory array including N+1 resistive memory cells expressing a bit sequence of N bits for each word line, in which N is an integer greater than or equal to 2.
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公开(公告)号:US20240112004A1
公开(公告)日:2024-04-04
申请号:US18115891
申请日:2023-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jangho AN , Seungchul JUNG , Soon-Wan KWON
CPC classification number: G06N3/063 , G06F7/5443 , G06N3/04 , H10B10/12 , H10B10/18
Abstract: An apparatus including a memory layer including a plurality of front-end-of-line (FEOL) memory cells and a logic layer including plural arithmetic logic gates including back-end-of-line (BEOL) transistors, the plurality of BEOL transistors being vertically stacked on respective upper ends of the plurality of memory cells, wherein each of multiple transistors of the plurality of BEOL transistors operates as a multiplier and is configured to provide an operation result with respect to first values stored in corresponding memory cells of the plurality of memory cells.
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公开(公告)号:US20240069867A1
公开(公告)日:2024-02-29
申请号:US18351039
申请日:2023-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seok Ju YUN , Jaehyuk LEE , Seungchul JUNG , Soon-Wan KWON , Sungmeen MYUNG , Daekun YOON , Dong-Jin CHANG
CPC classification number: G06F7/523 , G06F7/501 , G06F7/5443 , G11C7/109
Abstract: An apparatus and method with in-memory computing (IMC) are provided. An in-memory computing (IMC) circuit includes a plurality of memory banks, each memory bank including a bit cell configured to store a weight value and an operator configured to receive an input value, the operator being connected to the bit cell such that the operator upon receiving the input value outputs a logic operation result between the input value and the weight value, and a logic gate configured to receive the logic operation result of each of the memory banks.
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