公开(公告)号：US10026736B2

公开(公告)日：2018-07-17

申请号：US15384834

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hyun Choi ,  Yong-Suk Tak ,  Gi-Gwan Park ,  Bon-Young Koo ,  Ki-Yeon Park ,  Won-Oh Seo

IPC: H01L29/66 ,  H01L27/088 ,  H01L21/02 ,  H01L21/8234 ,  H01L23/26 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgassing prevention pattern sequentially stacked.

公开(公告)号：US10685957B2

公开(公告)日：2020-06-16

申请号：US16005915

申请日：2018-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hyun Choi ,  Yong-Suk Tak ,  Gi-Gwan Park ,  Bon-Young Koo ,  Ki-Yeon Park ,  Won-Oh Seo

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/417 ,  H01L29/78 ,  H01L21/02 ,  H01L21/8234 ,  H01L23/26 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.

公开(公告)号：US20180301452A1

公开(公告)日：2018-10-18

申请号：US16005915

申请日：2018-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hyun Choi ,  Yong-Suk Tak ,  Gi-Gwan Park ,  Bon-Young Koo ,  Ki-Yeon Park ,  Won-Oh Seo

IPC: H01L27/088 ,  H01L21/02 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/26 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/02636 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L23/26 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.

公开(公告)号：US09883466B2

公开(公告)日：2018-01-30

申请号：US14905954

申请日：2014-07-23

Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University R&DB Foundation

Inventor： Ji-Woo Jeong ,  Seong-Won Kim ,  Yeon-Chul Shin ,  Seo-Min Yang ,  Jin-Woo Yang ,  Seung-Min Yoo ,  Sung-Hyun Choi ,  Chul-Hoon Hwang

IPC: H04W52/34 ,  H04W16/10 ,  H04W52/24 ,  H04W52/36 ,  H04W72/04 ,  H04W72/08

CPC classification number: H04W52/34 ,  H04W16/10 ,  H04W52/243 ,  H04W52/245 ,  H04W52/362 ,  H04W72/0453 ,  H04W72/085

Abstract: A method and an apparatus for performing transmission power selection of a wireless access device and channel allocation in a combination manner, for resource management optimized for a wireless network environment supporting multimedia traffic are provided. In a method for managing a radio resource of at least one Access Point (AP) in a wireless communication network, a transmission power select operation for the AP is performed on each of a plurality of channel settings, and a network performance value is predicted. Optimized channel setting is selected among the plurality of channel settings depending on the predicted network performance value. The optimized channel setting and optimized transmission power corresponding to the optimized channel setting are allocated to the AP.

公开(公告)号：US09559185B2

公开(公告)日：2017-01-31

申请号：US15134906

申请日：2016-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Suk Tak ,  Gyeom Kim ,  Ki-Yeon Park ,  Sung-Hyun Choi ,  Bon-Young Koo

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161 ,  H01L29/165 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/6656 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate including an active fin structure, a plurality of gate structures, a first spacer on sidewalls of each of the gate structures, and a second spacer on sidewalls of the first spacer. The active fin structure may extend in a first direction and including a plurality of active fins with adjacent active fins divided by a recess. Each of the plurality of gate structures may extend in a second direction crossing the first direction, and may cover the active fins. The first spacer may include silicon oxycarbonitride (SiOCN), and may have a first carbon concentration. The second spacer may include SiOCN and may have a second carbon concentration which is different from the first carbon concentration. The semiconductor device may have a low parasitic capacitance and good electrical characteristics.

Abstract translation: 半导体器件包括：衬底，其包括有源鳍结构，多个栅极结构，每个栅极结构的侧壁上的第一间隔物，以及在第一间隔物的侧壁上的第二间隔物。 主动翅片结构可以在第一方向上延伸并且包括多个活动翅片，相邻的活动翅片由凹部分开。 多个栅极结构中的每一个可以在与第一方向交叉的第二方向上延伸，并且可以覆盖活动鳍片。 第一间隔物可以包括硅碳氮氧化物（SiOCN），并且可以具有第一碳浓度。 第二间隔物可以包括SiOCN，并且可以具有不同于第一碳浓度的第二碳浓度。 半导体器件可以具有低寄生电容和良好的电特性。