公开(公告)号：US10685957B2

公开(公告)日：2020-06-16

申请号：US16005915

申请日：2018-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hyun Choi ,  Yong-Suk Tak ,  Gi-Gwan Park ,  Bon-Young Koo ,  Ki-Yeon Park ,  Won-Oh Seo

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/417 ,  H01L29/78 ,  H01L21/02 ,  H01L21/8234 ,  H01L23/26 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.

公开(公告)号：US20180301452A1

公开(公告)日：2018-10-18

申请号：US16005915

申请日：2018-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hyun Choi ,  Yong-Suk Tak ,  Gi-Gwan Park ,  Bon-Young Koo ,  Ki-Yeon Park ,  Won-Oh Seo

IPC: H01L27/088 ,  H01L21/02 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/26 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/02636 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L23/26 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.

公开(公告)号：US10797160B2

公开(公告)日：2020-10-06

申请号：US16149387

申请日：2018-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Jun Sim ,  Won-Oh Seo ,  Sun-Jung Kim ,  Ki-Yeon Park

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/02 ,  H01L27/11 ,  H01L21/3213 ,  H01L29/49

Abstract: A method of fabricating a semiconductor device may include forming a fin structure on a substrate; forming an interface film having a first thickness on the fin structure using a first process; forming a gate dielectric film having a second thickness on the interface film using a second process different from the first process; and densifying the gate dielectric film using a third process different from the first and second processes. The second thickness may be greater than the first thickness, and the first thickness of the interface film may be unchanged after the densifying of the gate dielectric film.

公开(公告)号：US10026736B2

公开(公告)日：2018-07-17

申请号：US15384834

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hyun Choi ,  Yong-Suk Tak ,  Gi-Gwan Park ,  Bon-Young Koo ,  Ki-Yeon Park ,  Won-Oh Seo

IPC: H01L29/66 ,  H01L27/088 ,  H01L21/02 ,  H01L21/8234 ,  H01L23/26 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgassing prevention pattern sequentially stacked.