公开(公告)号：US20150062475A1

公开(公告)日：2015-03-05

申请号：US14453137

申请日：2014-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eok-su KIM ,  Myung-kwan RYU ,  Kyoung-seok SON ,  Sung-hee LEE

IPC: H01L29/786 ,  G02F1/133 ,  H01L29/423 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L29/78648 ,  G02F1/1368 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0426 ,  H01L29/4908 ,  H01L29/78645

Abstract: A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.

Abstract translation: 公开了一种薄膜晶体管（TFT）及其驱动方法。 TFT包括：有源层; 底栅电极，其设置在所述有源层下方，以驱动所述有源层的第一区域; 以及设置在有源层上以驱动有源层的第二区域的顶栅电极。 TFT通过使用底栅电极和顶栅电极来控制有源层的导电性。

公开(公告)号：US20140299231A1

公开(公告)日：2014-10-09

申请号：US14077846

申请日：2013-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kun-mo CHU ,  Chang-youl MOON ,  Sung-hee LEE ,  Jun-sik HWANG

IPC: B23K35/02

CPC classification number: B23K35/0222 ,  B23K35/0244

Abstract: A solder composite is provided. The solder composite may include: a metal-based solder matrix, a capsule dispersed in the solder matrix, and a self-healing material that is encapsulated in the capsule. The self-healing material may be configured to react with the solder matrix when in contact with the solder matrix such that at least one of an electrically conductive intermetallic compound and an electrically conductive alloy is formed.

Abstract translation: 提供焊料复合材料。 焊料复合材料可以包括：金属基焊料基质，分散在焊料基质中的胶囊，以及封装在胶囊中的自修复材料。 自修复材料可以被配置为当与焊料基质接触时与焊料基质反应，使得形成导电金属间化合物和导电合金中的至少一种。

公开(公告)号：US20140335681A1

公开(公告)日：2014-11-13

申请号：US14268053

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho LEE ,  Yong-sung KIM ,  Chang-youl MOON ,  Sung-hee LEE ,  Chang-seung LEE

IPC: H01L21/02

CPC classification number: H01L21/02527 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/2007 ,  H01L29/1606 ,  H01L29/66015

Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Abstract translation: 石墨烯转移方法，使用其的器件制造方法和包括石墨烯的衬底结构包括在第一衬底上形成催化剂层，在催化剂层上形成石墨烯层，在石墨烯层上形成保护金属层， 将保护金属层，石墨烯层和催化剂层保留在支撑体上，从支撑体除去催化剂层，将保护金属层和保护金属层转移到保护金属层， 石墨烯层从支撑体到第二基底。