WAFER PROCESSING APPARATUS AND WAFER PROCESSING METHOD USING THE SAME APPARATUS

    公开(公告)号:US20210028034A1

    公开(公告)日:2021-01-28

    申请号:US16751882

    申请日:2020-01-24

    Abstract: A wafer processing apparatus is provided. The apparatus includes: a heating plate through which vacuum ports are formed; a plurality of temperature sensors; a heating device configured to heat the heating plate; first and second power supplies; temperature controllers to generate first and second feedback temperature control signals for controlling power output power supplies based on measurement values generated by the temperature sensors; an electronic pressure regulator configured to provide vacuum pressure for fixing a wafer to the plurality of vacuum ports; and a wafer chucking controller configured to control the electronic pressure regulator, and generate a feedback pressure control signal for controlling the electronic pressure regulator based on the first and second feedback temperature control signals.

    POLISHING HEAD AND POLISHING CARRIER APPARATUS HAVING THE SAME

    公开(公告)号:US20250135600A1

    公开(公告)日:2025-05-01

    申请号:US18906603

    申请日:2024-10-04

    Abstract: A polishing head may include a substrate carrier detachably secured to a driving shaft and to pressurize and rotate a substrate, the substrate carrier includes a flexible membrane, wherein the flexible membrane includes a main thin film having a first surface to be in contact with the substrate and a second surface opposite to the first surface and a plurality of vertical thin films extending from the main thin film in a vertical direction to define a plurality of pressurizing chambers that are divided along a radial direction about a central axis; a plurality of temperature elements disposed under the plurality of pressurizing chambers in the main thin film and configured to apply local heat to the substrate; and a plurality of pressure elements respectively disposed on the plurality of temperature elements in the main thin film and configured to apply local pressure to the main thin film.

    CLEANER FOR CHEMICAL MECHANICAL POLISHING APPARATUS

    公开(公告)号:US20240208005A1

    公开(公告)日:2024-06-27

    申请号:US18226873

    申请日:2023-07-27

    CPC classification number: B24B53/017 B24B37/005 B24B37/04

    Abstract: A cleaner for a CMP apparatus includes a cleaning body, a plurality of cleaning nozzles, a vision system and a controller. The cleaning body may be arranged under a polishing head of the CMP apparatus configured to hold a substrate. The cleaning body may be configured to receive a cleaning solution for cleaning the polishing head. The cleaning nozzles may be arranged at the cleaning body to inject the cleaning solutions to the polishing head. The vision system may photograph the polishing head to which the cleaning solution may be injected to obtain an image of the polishing head. The controller may individually control amounts of the cleaning solutions injected from the cleaning nozzles based on the image of the polishing head. Thus, a scratch caused by a defect may not be generated at the substrate.

    BAKING APPARATUS
    7.
    发明申请

    公开(公告)号:US20220344181A1

    公开(公告)日:2022-10-27

    申请号:US17666796

    申请日:2022-02-08

    Abstract: A baking apparatus, may include a processing chamber including a lower chamber and an upper chamber connected by a ring shutter; a baking plate in the processing chamber adjacent to a region in which the lower chamber and the ring shutter overlap; an active flow controller including a first module and a second module in the lower chamber adjacent to the baking plate; a first auxiliary flow controller on a lower part of the ring shutter, adjacent to the lower chamber; and a second auxiliary flow controller in the upper chamber adjacent to the ring shutter. The active controller may be configured to move based on movement of the first module in a first direction perpendicular to an upper surface of the baking plate. The active flow controller may be configured to control airflow around the second module by movement of the second module.

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