公开(公告)号：US09275688B2

公开(公告)日：2016-03-01

申请号：US14211033

申请日：2014-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Sun Kim ,  Kyoung-Mook Lim

IPC: G11C5/06 ,  H01L25/065 ,  H01L25/18 ,  G11C5/02 ,  H01L23/31 ,  H01L23/00

CPC classification number: G11C5/06 ,  G11C5/025 ,  H01L23/3128 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/06136 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15311

Abstract: A semiconductor device includes a system-on-chip (SOC) and at least one wide input/output memory device. The SOC includes a plurality of SOC bump groups which provide input/output channels, respectively, independent from each other. The at least one wide input/output memory device is stacked on the system-on-chip to transmit/receive data to/from the system-on-chip through the SOC bump groups. The SOC bump groups are arranged and the at least one wide input/output memory device is configured such that one of the wide input/output memory devices can be mounted to the SOC as connected to all of the SOC bump groups, or such that two wide input/output memory devices can be mounted to the SOC with each of the wide input/out memory devices connected a respective half of the SOC bump groups.

Abstract translation: 半导体器件包括片上系统（SOC）和至少一个宽输入/输出存储器件。 SOC包括分别独立地提供输入/输出通道的多个SOC凸点组。 至少一个宽的输入/输出存储器件堆叠在片上系统上，以通过SOC凸点组向/从片上系统发送/接收数据。 SOC凸块组被布置，并且至少一个宽的输入/输出存储器件被配置成使得宽的输入/输出存储器件中的一个可以被安装到与所有SOC凸起组相连的SOC，或者使得两个 宽的输入/输出存储器件可以安装到SOC，每个宽输入/输出存储器件连接SOC凸块组的相应一半。

公开(公告)号：US09123655B2

公开(公告)日：2015-09-01

申请号：US14190797

申请日：2014-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Hwan Oh ,  Yu-Ra Kim ,  Tae-Sun Kim ,  Kwang-Sub Yoon

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/306

CPC classification number: H01L21/3086 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/32139

Abstract: A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.

Abstract translation: 一种制造半导体器件的层图案的方法，所述方法包括在蚀刻对象层上形成抗反射涂层（ARC）层，使得ARC层包括具有酰亚胺基团的聚合物; 在ARC层上形成光刻胶图案; 通过光致抗蚀剂图案曝光的ARC层的湿蚀刻部分以形成ARC层图案; 并使用光致抗蚀剂图案蚀刻蚀刻对象层作为蚀刻掩模以形成层图案。

公开(公告)号：US09373698B2

公开(公告)日：2016-06-21

申请号：US14505662

申请日：2014-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Sun Kim ,  Jae-Kyung Seo ,  Ji-Ho Kim ,  Kwang-Sub Yoon ,  Bum-Joon Youn ,  Ki-Man Lee

IPC: H01L23/52 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L21/8234 ,  H01L21/027 ,  H01L29/51

CPC classification number: H01L29/66636 ,  H01L21/0276 ,  H01L21/823418 ,  H01L21/823437 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7834

Abstract: In a method of manufacturing a semiconductor device, an isolation layer pattern is formed on a substrate to define a field region covered by the isolation layer pattern and first and second active regions that is not covered by the isolation layer pattern and protrudes from the isolation layer pattern. A first anti-reflective layer is formed on the isolation layer pattern. A first photoresist layer is formed on the first and second active regions of the substrate and the first anti-reflective layer. The first photoresist layer is partially etched to form a first photoresist pattern covering the first active region. Impurities are implanted into the second active region to form a first impurity region.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成隔离层图案，以限定由隔离层图案覆盖的场区域和未被隔离层图案覆盖并从隔离层突出的第一和第二有源区域 模式。 第一抗反射层形成在隔离层图案上。 在基板的第一和第二有源区域和第一抗反射层上形成第一光致抗蚀剂层。 部分蚀刻第一光致抗蚀剂层以形成覆盖第一有源区的第一光致抗蚀剂图案。 将杂质注入到第二有源区中以形成第一杂质区。