公开(公告)号：US09646709B2

公开(公告)日：2017-05-09

申请号：US14851141

申请日：2015-09-11

Applicant: SanDisk Technologies Inc.

Inventor： Philip Reusswig ,  Harish Singidi ,  Deepak Raghu ,  Gautam Dusija ,  Pao-Ling Koh ,  Chris Avila

IPC: G11C16/04 ,  G11C16/34 ,  G06F11/10 ,  G11C29/52 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/3431 ,  G06F11/1072 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3422 ,  G11C16/349 ,  G11C29/52

Abstract: Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.

公开(公告)号：US09575829B2

公开(公告)日：2017-02-21

申请号：US13802140

申请日：2013-03-13

Applicant: SANDISK TECHNOLOGIES INC.

Inventor： Nian Niles Yang ,  Chris Avila ,  Steven Sprouse ,  Abhijeet Manohar ,  Yichao Huang

IPC: G11C29/00 ,  G06F11/07 ,  G11C29/50 ,  G11C16/34 ,  G11C29/42 ,  G11C11/56 ,  G11C29/04

CPC classification number: G06F11/0793 ,  G06F11/073 ,  G11C11/56 ,  G11C11/5642 ,  G11C16/3404 ,  G11C29/42 ,  G11C29/50004 ,  G11C2029/0409 ,  G11C2029/0411

Abstract: A method may be performed in a data storage device that includes a memory and a controller, in response to a request to read data from the memory. The data is located within a first word line of the memory. The method includes accessing the data from the first word line and determining, based on a probability threshold, whether to perform a remedial action with respect to a second word line.

Abstract translation: 响应于从存储器读取数据的请求，可以在包括存储器和控制器的数据存储设备中执行方法。 数据位于存储器的第一个字线内。 该方法包括从第一字线访问数据，并且基于概率阈值确定是否针对第二字线执行补救动作。

公开(公告)号：US20160026410A1

公开(公告)日：2016-01-28

申请号：US14861953

申请日：2015-09-22

Applicant: SanDisk Technologies Inc.

Inventor： Chris Avila ,  Yingda Dong ,  Alexander Kwok-Tung Mak ,  Steven T. Sprouse

IPC: G06F3/06

CPC classification number: G06F3/0652 ,  G06F3/0619 ,  G06F3/0679 ,  G06F11/106 ,  G11C16/04

Abstract: In a nonvolatile memory array, such as a three-dimensional array of charge-storage memory cells, data is scrubbed according to a scheme which weights particular data that is exposed to potentially damaging voltages. Data that may cause damage to other data is moved to a location where such potential damage is reduced.

Abstract translation: 在诸如电荷存储存储器单元的三维阵列的非易失性存储器阵列中，根据对暴露于潜在有害电压的特定数据进行加权的方案来擦除数据。 可能导致其他数据损坏的数据被移动到这种潜在损害减少的位置。

公开(公告)号：US09201788B1

公开(公告)日：2015-12-01

申请号：US14520909

申请日：2014-10-22

Applicant: SanDisk Technologies Inc.

Inventor： Chris Avila ,  Gautam Dusija ,  Deepak Raghu ,  Cynthia Hsu ,  Changyuan Chen ,  Farookh Moogat

IPC: G06F12/02 ,  G06F12/06

CPC classification number: G06F12/0246 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0629 ,  G06F3/064 ,  G06F3/0679 ,  G06F12/0638 ,  G06F2212/1024 ,  G06F2212/214 ,  G06F2212/7202 ,  G06F2212/7205 ,  G11C11/005 ,  G11C2211/5641

Abstract: In a nonvolatile memory, hybrid blocks are initially written with only lower page data. The hybrid blocks later have middle and upper page data written. For high speed writes, data is written to a hybrid block and two or more Single Level Cell (SLC) blocks. The data from the SLC blocks are copied to the hybrid block at a later time in a folding operation.

Abstract translation: 在非易失性存储器中，混合块最初只写入较低页数据。 混合块后面有中上页数据写入。 对于高速写入，将数据写入混合块和两个或更多个单级单元（SLC）块。 来自SLC块的数据在稍后的折叠操作中被复制到混合块。

公开(公告)号：US09136022B2

公开(公告)日：2015-09-15

申请号：US14285052

申请日：2014-05-22

Applicant: SanDisk Technologies Inc.

Inventor： Deepak Raghu ,  Gautam A. Dusija ,  Chris Avila ,  Yingda Dong ,  Man Mui ,  Xiying Costa ,  Pao-Ling Koh

IPC: G11C15/04 ,  G11C29/00 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C29/82 ,  G06F11/108 ,  G11C16/0483 ,  G11C16/10 ,  G11C29/08 ,  G11C29/822 ,  G11C29/838 ,  G11C2029/0411

Abstract: Layers in a multi-layer memory array are categorized according to likely error rates as predicted from their memory hole diameters. Data to be stored along a word line in a high risk layer is subject to a redundancy operation (e.g. XOR) with data to be stored along a word line in a low risk layer so that the risk of both being bad is low.

Abstract translation: 多层存储器阵列中的层根据从其存储孔直径预测的可能的错误率进行分类。 沿着高风险层中的字线存储的数据经受冗余操作（例如XOR），其中数据将沿着低风险层中的字线存储，使得两者的风险都较低。

公开(公告)号：US09063879B2

公开(公告)日：2015-06-23

申请号：US13757774

申请日：2013-02-02

Applicant: SANDISK TECHNOLOGIES INC.

Inventor： Nian Niles Yang ,  Chris Avila ,  Steven Sprouse ,  Jianmin Huang ,  Yichao Huang ,  Kulachet Tanpairoj

IPC: G06F11/00 ,  G06F11/10

CPC classification number: G06F11/1072 ,  G11C11/56 ,  G11C11/5642 ,  G11C16/3404 ,  G11C16/3418 ,  G11C29/52

Abstract: A method performed in a data storage device including a non-volatile memory includes reading a representation of data, the representation corresponding to one or more selected states of storage elements of a group of storage elements of the non-volatile memory. The method includes, in response to a count of errors in the representation of the data exceeding a threshold, scheduling a remedial action to be performed on the group of storage elements.

Abstract translation: 在包括非易失性存储器的数据存储设备中执行的方法包括读取数据的表示，所述表示对应于所述非易失性存储器的一组存储元件的存储元件的一个或多个选定状态。 该方法包括响应于超过阈值的数据的表示中的错误的计数，调度对该组存储元件执行的补救动作。

公开(公告)号：US20150143025A1

公开(公告)日：2015-05-21

申请号：US14086162

申请日：2013-11-21

Applicant: SanDisk Technologies Inc.

Inventor： Sergey Anatolievich Gorobets ,  Chris Avila

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7202 ,  G06F2212/7205 ,  G11C11/56 ,  G11C11/5621 ,  G11C11/5628 ,  G11C16/0483 ,  G11C2211/5641 ,  G11C2211/5648 ,  G11C2213/71

Abstract: Certain MLC blocks that tend to be reclaimed before they are full may be programmed according to a programming scheme that programs lower pages first and programs upper pages later. This results in more lower page programming than upper page programming on average. Lower page programming is generally significantly faster than upper page programming so that more lower page programming (and less upper programming) reduces average programming time.

Abstract translation: 在完成之前倾向回收的某些MLC块可以根据编程方案进行编程，编程方案首先编程较低的页面，然后再编程上一页。 这导致平均比页面编程更低的页面编程。 下页编程通常比上页编程快得多，因此更低级的页面编程（和较少的上编程）可以减少平均编程时间。

公开(公告)号：US20150121156A1

公开(公告)日：2015-04-30

申请号：US14064823

申请日：2013-10-28

Applicant: SanDisk Technologies Inc.

Inventor： Deepak Raghu ,  Gautam A. Dusija ,  Chris Avila ,  Yingda Dong ,  Man Mui ,  Alexander Kwok-Tung Mak ,  Pao-Ling Koh

IPC: G11C29/08

CPC classification number: G11C29/08 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C29/00 ,  G11C29/021 ,  G11C29/028 ,  H01L27/115 ,  H01L27/1157 ,  H01L27/11582

Abstract: Memory hole diameter in a three dimensional memory array may be calculated from characteristics that are observed during programming. Suitable operating parameters may be selected for operating a block based on memory hole diameters. Hot counts of blocks may be adjusted according to memory hole size so that blocks that are expected to fail earlier because of small memory holes are more lightly used than blocks with larger memory holes.

Abstract translation: 三维存储器阵列中的存储孔直径可以根据在编程期间观察到的特性来计算。 可以选择合适的操作参数来基于存储器孔直径操作块。 可以根据存储器孔尺寸来调整块的热计数，使得由于小的存储器孔而预期更早失效的块比具有较大存储器孔的块更轻易地使用。

公开(公告)号：US20150117099A1

公开(公告)日：2015-04-30

申请号：US14285052

申请日：2014-05-22

Applicant: SanDisk Technologies Inc.

Inventor： Deepak Raghu ,  Gautam A. Dusija ,  Chris Avila ,  Yingda Dong ,  Man Mui ,  Xiying Costa ,  Pao-Ling Koh

IPC: G11C29/00 ,  G11C16/10 ,  G11C16/04

CPC classification number: G11C29/82 ,  G06F11/108 ,  G11C16/0483 ,  G11C16/10 ,  G11C29/08 ,  G11C29/822 ,  G11C29/838 ,  G11C2029/0411

Abstract: Layers in a multi-layer memory array are categorized according to likely error rates as predicted from their memory hole diameters. Data to be stored along a word line in a high risk layer is subject to a redundancy operation (e.g. XOR) with data to be stored along a word line in a low risk layer so that the risk of both being bad is low.

公开(公告)号：US20150082120A1

公开(公告)日：2015-03-19

申请号：US14028260

申请日：2013-09-16

Applicant: SanDisk Technologies, Inc.

Inventor： Nian Yang ,  Chris Avila ,  Steven T. Sprouse ,  Aaron Lee

IPC: G06F11/10

CPC classification number: G06F11/1048 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/3431 ,  G11C16/3459

Abstract: In a charge-storage memory array, memory cells that are programmed to a particular threshold voltage range and have subsequently lost charge have their threshold voltages restored by selectively adding charge to the memory cells. Adding charge only to memory cells with high threshold voltage ranges may sufficiently increase threshold voltages of other memory cells so that they do not require separate addition of charge.

Abstract translation: 在电荷存储存储器阵列中，被编程到特定阈值电压范围并随后损耗电荷的存储器单元通过选择性地将电荷加到存储器单元而恢复它们的阈值电压。 仅向具有高阈值电压范围的存储单元加电荷可充分提高其它存储单元的阈值电压，从而不需要单独添加电荷。