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    METHOD OF DETERMINING AN OVERLAP DISTANCE OF AN OPTICAL HEAD AND DIGITAL EXPOSURE DEVICE USING THE METHOD
    1.
    发明申请
    METHOD OF DETERMINING AN OVERLAP DISTANCE OF AN OPTICAL HEAD AND DIGITAL EXPOSURE DEVICE USING THE METHOD 有权
    使用该方法确定光头和数字曝光装置的重叠距离的方法

    公开(公告)号：US20110199620A1

    公开(公告)日：2011-08-18

    申请号：US12902745

    申请日：2010-10-12

    申请人： Sang-Hyun YUN ,  Hi-Kuk LEE ,  Sang-Woo BAE ,  Cha-Dong KIM ,  Jung-In PARK

    发明人： Sang-Hyun YUN ,  Hi-Kuk LEE ,  Sang-Woo BAE ,  Cha-Dong KIM ,  Jung-In PARK

    IPC分类号： G01B11/14

    CPC分类号： G01B11/14 ,  G03F7/70291 ,  G03F7/70475

    摘要： An apparatus and a method for determining an overlap distance of an optical head is disclosed. Positions and light amount distributions of each light spot can be measured, which may be provided from an optical head to a substrate. Gaussian distribution may be applied to the positions and the light amount distributions to calculate a compensation model of each of the light spots. A first accumulated light amount corresponding to each first area of the substrate may be calculated if the optical head is scanning along a first direction of the substrate using the compensation model. A second accumulated light amount corresponding to each second area overlapped with the each first area is calculated if the optical head is scanning along the first direction, which is moved in a second direction by a first distance using the compensation model. An overlap distance may be determined based on a uniformity of summations of the first and second accumulated light amount.

    摘要翻译： 公开了一种用于确定光学头的重叠距离的装置和方法。 可以测量每个光点的位置和光量分布，其可以从光学头到基底提供。 高斯分布可以应用于位置和光量分布，以计算每个光点的补偿模型。 如果光头使用补偿模型沿着衬底的第一方向扫描，则可以计算对应于衬底的每个第一区域的第一累积光量。 如果光头沿着使用补偿模型沿第二方向在第二方向上移动第一距离的第一方向进行扫描，则计算与每个第一区域重叠的每个第二区域对应的第二累积光量。 可以基于第一和第二累积光量的相加的均匀性来确定重叠距离。

    PHOTOSENSITIVE FILM PATTERN AND METHOD FOR MANUFACTURING A PHOTOSENSITIVE FILM PATTERN
    2.
    发明申请
    PHOTOSENSITIVE FILM PATTERN AND METHOD FOR MANUFACTURING A PHOTOSENSITIVE FILM PATTERN 有权
    感光膜图案和制造感光膜图案的方法

    公开(公告)号：US20120301684A1

    公开(公告)日：2012-11-29

    申请号：US13309679

    申请日：2011-12-02

    申请人： Sang Hyun YUN ,  Cha-Dong KIM ,  Jung-In PARK ,  Hi-Kuk LEE ,  Su-Yeon SIM

    发明人： Sang Hyun YUN ,  Cha-Dong KIM ,  Jung-In PARK ,  Hi-Kuk LEE ,  Su-Yeon SIM

    IPC分类号： B32B3/00 ,  G03F7/20 ,  G03F7/24 ,  G03B27/54

    CPC分类号： G03F1/36 ,  G03F7/70441

    摘要： A method for manufacturing a photosensitive film pattern includes: forming a thin film on a substrate; forming a photosensitive film on the thin film; arranging an exposure apparatus including a photo-modulation element on the photosensitive film; exposing the photosensitive film using the exposure apparatus according to an exposure pattern of the photo-modulation element; and developing the exposed photosensitive film to form a photosensitive film pattern. The exposure pattern includes a main pattern of a quadrangular shape and a at least one assistance pattern positioned at a corner of the main pattern. The photosensitive film pattern has a quadrangular shape with a long edge and a short edge, and a corner with a curved surface having a curvature radius of 20% to 40% of a length of the short edge.

    摘要翻译： 感光膜图案的制造方法包括：在基板上形成薄膜; 在薄膜上形成感光膜; 在感光膜上布置包括光调制元件的曝光装置; 根据光调制元件的曝光图案，使用曝光装置曝光感光膜; 并显影曝光的感光膜以形成感光膜图案。 曝光图案包括四边形的主图案和位于主图案的拐角处的至少一个辅助图案。 感光膜图案具有长边缘和短边缘的四边形形状，以及具有曲率半径为短边长度的20％至40％的曲面的拐角。

    METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME
    4.
    发明申请
    METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME 有权
    制造薄膜晶体管的方法和使用其制造显示器基板的方法

    公开(公告)号：US20110230019A1

    公开(公告)日：2011-09-22

    申请号：US12900936

    申请日：2010-10-08

    申请人： Sang-Hyun YUN ,  Cha-Dong KIM ,  Jung-In PARK ,  Hi-Kuk LEE

    发明人： Sang-Hyun YUN ,  Cha-Dong KIM ,  Jung-In PARK ,  Hi-Kuk LEE

    IPC分类号： H01L21/336

    CPC分类号： H01L27/1288 ,  H01L27/1214

    摘要： An approach for patterning and etching without a mask is provided in a manufacturing a thin-film transistor, a gate electrode, a gate insulating layer, a semiconductor layer, an ohmic contact layer and source metal layer of a substrate. A first photoresist pattern including a first photo pattern and a second photo pattern is formed using a digital exposure device by generating a plurality of spot beams, the first photo pattern is formed to a first region of the base substrate and has a first thickness, and the second photo pattern is formed to a second region adjacent to the first region, and has a second thickness and a width in a range of about 50% to about 60% of a diameter of the spot beam. The source metal layer is patterned to form a source electrode and a drain electrode, and the source electrode and the drain electrode are spaced apart from each other in the first region of an active pattern.

    摘要翻译： 在制造薄膜晶体管，栅极电极，栅极绝缘层，半导体层，欧姆接触层和源极金属层的衬底的制造中提供了用于没有掩模的图案化和蚀刻的方法。 使用数字曝光装置通过产生多个点光来形成包括第一照片图案和第二照片图案的第一光致抗蚀剂图案，第一照片图案形成于基底基板的第一区域并具有第一厚度，并且 第二照片图案形成在与第一区域相邻的第二区域上，并且具有第二厚度和在点光束直径的约50％至约60％的范围内的宽度。 图案化源极金属层以形成源电极和漏电极，并且源电极和漏电极在活性图案的第一区域中彼此间隔开。