摘要:
Disclosed is an apparatus for focusing a charged particle beam onto a speciman, which comprises a scanner for scanning a pre-formed standard pattern with a charged particle beam, a converging unit capable of converging the charged particle beam onto a specimen, a detector for detecting secondary charged particles emitted as a result of scanning the standard pattern by the scanner, a circuit for deriving a standard frequency component determined by the period of scanning with the charged particle beam and the shape of the portion of the standard pattern in the region being scanned with the charged particle beam, and a circuit cooperating with the converging unit for finding the maximum value of the amplitude of the standard frequency component thereby identifying attainment of focusing of the charged particle beam with high accuracy.
摘要:
A small-dimension measurement system by scanning electron beam comprises an electron optical column including an electron source for emitting an electron beam to scan a sample, at least one pair of detectors disposed symmetrically with respect to an optical axis of the electron optical column for detecting position information from the sample by scanning of the electron beam, and a signal selecting circuit for subjecting the outputs of the paired detectors to a predetermined signal selection. The signal selecting circuit selectively and alternately provides maximum or peak portions of the outputs of the paired detectors which portions correspond to opposite edge portions of the sample. The output of the signal selecting circuit is applied to a signal processing circuit for conversion into a dimension of a predetermined pattern on the sample.
摘要:
An electron beam is irradiated on a sample to generate secondary electrons from the sample, the secondary electrons are detected by a secondary electron detector through a retarding grid to provide a secondary electron detector output signal, the relation is acquired in advance between a known sample voltage and a value (normalized secondary electron signal for the known sample voltage) resulting from dividing a differential value of the secondary electron detector output signal at a retarding grid voltage by the secondary electron detector output signal, and this relation is retrieved with a normalized secondary electron signal obtained with an unknown sample voltage to determine an absolute value of the unknown sample voltage.
摘要:
A magnetic field measuring apparatus measures the magnetic field intensity of a magnetic field created by a sample magnetic head by passing a finely focussed charged particle beam through the magnetic field and by measuring the deflection of the charged particle beam caused by the deflecting action of the magnetic field on the charged particle beam. The path of the charged particle beam (the sample magnetic head) is shifted stepwise toward the sample magnetic head (the path of the charged particle beam) until the charged particle impinges on the surface of the sample magnetic head. Upon the detection of the impingement of the charged particle beam on the surface of the sample magnetic head, the path of the charged particle beam (the sample magnetic head) is put one step back so that the path of the charged particle beam extends as close as possible to the surface of the sample magnetic head for accurate magnetic field intensity measurements. Thus, the distribution of magnetic field intensity in the magnetic field can be accurately determined.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要:
An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus. To achieve the above object, according to the present invention, there is provided an inspection method using an electron beam, including the steps of; applying a voltage on a sample via a sample stage; converging an electron beam on the sample; scanning the sample with the converged electron beam and simultaneously, continuously moving the sample stage; detecting charged particles generated from the sample; and detecting a defect on the sample on the basis of the detected charged particles; wherein a distance between the sample and the shield frame is determined on the basis of a critical discharge between the sample stage and the shield frame; coils of at least hexapoles for correcting the shape of an electron beam are provided; the electron beam is deflected for blanking during movement of the sample with the crossover of the electron beam taken as a fulcrum of blanking; or the magnitude of the voltage applied to the sample may be determined depending on the kind of sample.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.