公开(公告)号：US09871254B2

公开(公告)日：2018-01-16

申请号：US14122168

申请日：2012-06-14

申请人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

发明人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

IPC分类号： H01M10/052 ,  H01M4/66 ,  H01M4/04

CPC分类号： H01M4/667 ,  H01M4/0402 ,  H01M4/661 ,  H01M4/663 ,  H01M10/052

摘要： Provided is an electrode material with excellent tab weldability and realizing decreased contact resistance with an active material layer. A collector (electrode material) (1) is provided with a metal foil substrate (1a) and a carbon-containing conductive substance (1b), and is configured such that, when observed from a square viewfield with a surface area of 0.1 mm2, the conductive substance (1b) is arranged in islands on the surface of the substrate (1a) with a 1-80% coverage ratio of the conductive substance (1b) on the surface of the substrate (1a).

公开(公告)号：US20140099544A1

公开(公告)日：2014-04-10

申请号：US14122168

申请日：2012-06-14

申请人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

发明人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

IPC分类号： H01M4/66 ,  H01M4/04

CPC分类号： H01M4/667 ,  H01M4/0402 ,  H01M4/661 ,  H01M4/663 ,  H01M10/052

摘要： Provided is an electrode material with excellent tab weldability and realizing decreased contact resistance with an active material layer. A collector (electrode material) (1) is provided with a metal foil substrate (1a) and a carbon-containing conductive substance (1b), and is configured such that, when observed from a square viewfield with a surface area of 0.1 mm2, the conductive substance (1b) is arranged in islands on the surface of the substrate (1a) with a 1-80% coverage ratio of the conductive substance (1b) on the surface of the substrate (1a).

摘要翻译： 提供具有优异的接头焊接性并且与活性物质层实现降低的接触电阻的电极材料。 集电体（电极材料）（1）设置有金属箔基板（1a）和含碳导电性物质（1b），并且在从表面积为0.1mm 2的正方视场观察时， 导电物质（1b）以基板（1a）的表面上的导电物质（1b）的1-80％的覆盖率在基板（1a）的表面上以岛状排列。

公开(公告)号：US20130302719A1

公开(公告)日：2013-11-14

申请号：US13982411

申请日：2012-02-14

申请人： Satoru Takada ,  Jun Suzuki ,  Toshiki Sato

发明人： Satoru Takada ,  Jun Suzuki ,  Toshiki Sato

IPC分类号： H01M8/02

CPC分类号： H01M8/0206 ,  H01M8/0213 ,  H01M8/0228 ,  H01M2008/1095

摘要： Provided is a fuel cell separator that can maintain a low contact resistance for a long period of time while being used for a fuel cell, by using a carbon film that can be formed with high productivity. The fuel cell separator 10 is provided with: a substrate 1 comprising titanium or titanium alloy; and a conductive carbon layer 2 that is formed by compression bonding carbon powder onto the substrate 1, and covers the surface thereof. Between the substrate 1 and the carbon layer 2, particle-like titanium carbide 31 and carbon dissolved titanium 32 generated by reacting the titanium of the substrate 1 and carbon of the carbon layer 2 with each other through heat treatment are connected, forming an intermediate layer 3.

摘要翻译： 提供一种燃料电池隔板，其可以通过使用能够以高生产率形成的碳膜，能够在用于燃料电池的同时保持长时间的低接触电阻。 燃料电池隔板10设置有：包含钛或钛合金的基板1; 以及通过将碳粉压接在基板1上并覆盖其表面而形成的导电性碳层2。 在基板1和碳层2之间连接通过热处理使基板1的钛与碳层2的碳反应而产生的颗粒状的碳化钛31和碳溶解的钛32，形成中间层 3。

公开(公告)号：US20060255314A1

公开(公告)日：2006-11-16

申请号：US11129444

申请日：2005-05-16

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C09K13/00 ,  H01L21/461 ,  C09K13/06

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K13/08 ,  H01L21/02079

摘要： The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

摘要翻译： 研磨浆料含有微晶尺寸为10〜1000nm，平均粒径为30〜2000nm，分子量为1〜20重量％的羧酸的单斜晶氧化锆粒子， 和季铵烷基氢氧化铵，并且具有9至12的pH值。回收晶片的方法包括通过使用上述抛光浆料抛光所用测试晶片并除去形成在晶片上的膜和形成在晶片上的退化层的步骤 表面，对晶片的至少一侧进行镜面抛光的步骤，以及清洁晶片的步骤。

公开(公告)号：US06884634B2

公开(公告)日：2005-04-26

申请号：US10255668

申请日：2002-09-27

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： G01N27/04 ,  H01L21/66 ,  H01L23/544 ,  H01L21/00

CPC分类号： H01L22/34

摘要： A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.

摘要翻译： 一种在包括多个步骤的Si晶片回收处理中指定Cu-污染致动步骤或步骤的方法，包括：使用p型Si晶片或p型Si晶片和n型Si晶片作为监测晶片， 并且在Si晶片回收处理期间，在单个步骤或一系列连续步骤之前和之后，至少进行一次测量监视晶片的电阻的测量操作。 本发明能够非破坏性，简单地且精确地检测在Si晶片回收过程中可能污染Si晶片的Cu，并且能够指定Cu-污染致病过程。

公开(公告)号：US07699997B2

公开(公告)日：2010-04-20

申请号：US10677309

申请日：2003-10-03

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C03C25/68

CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/324

摘要： A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

摘要翻译： 一种回收硅晶片的方法，包括膜去除工艺，抛光工艺和清洁工艺，其中通过在150-300℃下加热20分钟至5小时除去硅晶片表面部分的加热/除去工艺是 提供了膜去除工艺和抛光工艺之间的进一步包括。 本发明提供一种回收硅晶片的有用方法，该硅晶片除去不仅沉积在表面上而且也渗入硅晶片内部的Cu，并且不会在硅晶片内部产生Cu污染。

公开(公告)号：US20050092349A1

公开(公告)日：2005-05-05

申请号：US10677309

申请日：2003-10-03

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： H01L21/304 ,  C23G1/00 ,  H01L21/02 ,  H01L21/30 ,  H01L21/302 ,  H01L21/306 ,  H01L21/322 ,  H01L21/324

CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/324

摘要： A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

摘要翻译： 一种回收硅晶片的方法，包括膜去除工艺，抛光工艺和清洁工艺，其中通过在150-300℃下加热20分钟至5小时除去硅晶片表面部分的加热/除去工艺是 提供了膜去除工艺和抛光工艺之间的进一步包括。 本发明提供一种回收硅晶片的有用方法，该硅晶片除去不仅沉积在表面上而且也渗入硅晶片内部的Cu，并且不会在硅晶片内部产生Cu污染。

公开(公告)号：US06406923B1

公开(公告)日：2002-06-18

申请号：US09630316

申请日：2000-07-31

申请人： Hidetoshi Inoue ,  Satoru Takada ,  Yoshihiro Hara

发明人： Hidetoshi Inoue ,  Satoru Takada ,  Yoshihiro Hara

IPC分类号： H01L2100

CPC分类号： H01L21/02079 ,  H01L21/02032 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32135

摘要： A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.

摘要翻译： 能够在晶片表面上回收具有降低的金属污染水平的已使用的半导体晶片的工艺。 该方法包括通过化学蚀刻去除衬底的一个或多个表面层的步骤; 通过机械加工刮擦少量的基板的一个表面; 通过化学蚀刻去除由于机械加工而发生的损伤层; 并将基板的另一表面抛光成镜面。

公开(公告)号：US5580500A

公开(公告)日：1996-12-03

申请号：US297811

申请日：1994-08-30

申请人： Kazuo Muramatsu ,  Manabu Hisada ,  Hideki Yamamuro ,  Hideo Ashida ,  Satoru Takada ,  Masami Takao ,  Yoshihiro Hara ,  Nobuhiro Ota

发明人： Kazuo Muramatsu ,  Manabu Hisada ,  Hideki Yamamuro ,  Hideo Ashida ,  Satoru Takada ,  Masami Takao ,  Yoshihiro Hara ,  Nobuhiro Ota

IPC分类号： C04B35/524 ,  C01B31/00

CPC分类号： C04B35/524

摘要： A carbon substrate manufacturing method includes a hot molding step, a burn-carbonizing step, a hot isostatical pressure treatment step, and a mirror polishing step. In the hot molding step, molding is performed while heating thermosetting resin powders to be a hard carbon substrate after burn-carbonizing, where the thermosetting resin powders are of a particle size 150 .mu.m or more, HPF 80-150 mm, a moisture content 1.0-3.0 weight %, Fe, Ni, Si and Ca respectively 5 ppm or less. In the burn-carbonizing process, a disk shaped resin molded body is filled into a graphite cylinder and burn-carbonized by heating from the external while the condition therefor is maintained in that the disk shaped resin molded body is stacked holding therein a graphite spacer at every one sheet basis or at every plurality of sheet basis and is loaded on its top with a tungsten carbide weight, where the graphite spacer has a heat conductivity 100 kcal/m.hr..degree. C. or less, a bulk density 1.70-1.85, and a flatness degree 10 .mu.m or less.

摘要翻译： 碳基板制造方法包括热成型步骤，燃烧碳化步骤，热等压压力处理步骤和镜面抛光步骤。 在热成型工序中，在将热固化性树脂粉末在烧成碳化后作为硬质碳基板加热的同时进行成型，其中热固性树脂粉末的粒径为150μm以上，HPF为80-150mm，水分含量 1.0-3.0重量％，Fe，Ni，Si和Ca分别为5ppm以下。 在烧成碳化工序中，将圆盘状树脂成形体填充到石墨圆筒中，通过加热从外部进行燃烧碳化，同时保持其状态，将盘状树脂成型体层叠在一起，将石墨间隔件 每一片或多个片材基础，并以碳化钨重量装载在其顶部，其中石墨间隔物具有100kcal / m·hr的热导率。 ℃以下，体积密度1.70-1.85，平坦度10μm以下。

公开(公告)号：US5247951A

公开(公告)日：1993-09-28

申请号：US938456

申请日：1992-09-01

申请人： Takao Machida ,  Satoru Takada ,  Kiyoaki Suzuki

发明人： Takao Machida ,  Satoru Takada ,  Kiyoaki Suzuki

IPC分类号： A45D34/04

CPC分类号： A45D34/042 ,  A45D2200/055

摘要： A cosmetic liquid applicator having a tubular shaft, a rotary knob at a rear end of the shaft and a piston axially slidable in the shaft upon rotation of the rotary knob. A nib, mounting to a forward end of the tubular shaft, has a passage communicating with a liquid chamber. A plurality of radially extending pojections are provided so that they are gradually reduced in diameter in the forward direction. A discharge hole is communicated with the passage, and a slot extends forwardly and rearwardly from the discharge hole in opposite directions of and transverse to the projections.

摘要翻译： 一种化妆品液体涂抹器，其具有管状轴，在所述轴的后端处的旋钮和当所述旋钮旋转时在所述轴中可轴向滑动的活塞。 安装到管状轴的前端的笔尖具有与液体室连通的通道。 提供多个径向延伸的突出物，使得它们在向前方向上逐渐减小直径。 排出孔与通道连通，并且槽从排出孔向前和向后延伸，并且与突出部相反并且横向于突起。