公开(公告)号：US07821065B2

公开(公告)日：2010-10-26

申请号：US09516082

申请日：2000-03-01

申请人： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osame ,  Yukio Tanaka ,  Yoshiharu Hirakata

发明人： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osame ,  Yukio Tanaka ,  Yoshiharu Hirakata

IPC分类号： H01L29/04

CPC分类号： H01L27/1244 ,  G02F1/13454 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78645 ,  H01L29/78675 ,  H01L31/02164

摘要： An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.

摘要翻译： 本发明的目的是提供一种具有高操作特性和可靠性的半导体器件。 所采取的措施是：在有机树脂膜上包含阳极氧化膜的电极，电极的阳极氧化膜和上面的像素电极之间形成像素电容器。 由于阳极氧化膜以15V / min的单位时间的施加电压进行阳极氧化，所以在电极上没有包裹，可以防止膜剥离。

公开(公告)号：US07288789B2

公开(公告)日：2007-10-30

申请号：US10446187

申请日：2003-05-28

申请人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

IPC分类号： H01L31/0376 ,  H01L31/20 ,  H01L31/036

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

摘要翻译： 一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。 栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同 重视对抗热门运营商和TFT的对策，重点针对当前的对策。 这使得可以实现高性能的半导体器件。 此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

公开(公告)号：US06576924B1

公开(公告)日：2003-06-10

申请号：US09498646

申请日：2000-02-07

申请人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

IPC分类号： H01L2900

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

摘要翻译： 一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。 栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同 重视对抗热门运营商和TFT的对策，重点针对当前的对策。 这使得可以实现高性能的半导体器件。 此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

公开(公告)号：US20110095312A1

公开(公告)日：2011-04-28

申请号：US12911083

申请日：2010-10-25

申请人： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osamè ,  Yukio Tanaka ,  Yoshiharu Hirakata

发明人： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osamè ,  Yukio Tanaka ,  Yoshiharu Hirakata

IPC分类号： H01L27/15 ,  H01L29/92

CPC分类号： H01L27/1244 ,  G02F1/13454 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78645 ,  H01L29/78675 ,  H01L31/02164

摘要： An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.

摘要翻译： 本发明的目的是提供一种具有高操作特性和可靠性的半导体器件。 所采取的措施是：在有机树脂膜上包含阳极氧化膜的电极，电极的阳极氧化膜和上面的像素电极之间形成像素电容器。 由于阳极氧化膜以15V / min的单位时间的施加电压进行阳极氧化，所以在电极上没有包裹，可以防止膜剥离。

公开(公告)号：US08445962B2

公开(公告)日：2013-05-21

申请号：US12911083

申请日：2010-10-25

申请人： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osamè ,  Yukio Tanaka ,  Yoshiharu Hirakata

发明人： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osamè ,  Yukio Tanaka ,  Yoshiharu Hirakata

IPC分类号： H01L29/04

CPC分类号： H01L27/1244 ,  G02F1/13454 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78645 ,  H01L29/78675 ,  H01L31/02164

摘要： An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented.

公开(公告)号：US08575619B2

公开(公告)日：2013-11-05

申请号：US13609906

申请日：2012-09-11

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

IPC分类号： H01L27/14

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

公开(公告)号：US07745829B2

公开(公告)日：2010-06-29

申请号：US12230954

申请日：2008-09-09

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

IPC分类号： H01L27/14

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US06967129B2

公开(公告)日：2005-11-22

申请号：US10456633

申请日：2003-06-09

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

IPC分类号： G09F9/30 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L21/00

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US06777716B1

公开(公告)日：2004-08-17

申请号：US09502675

申请日：2000-02-11

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado

IPC分类号： H01L2996

CPC分类号： H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

摘要： In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

摘要翻译： 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

公开(公告)号：US20090014724A1

公开(公告)日：2009-01-15

申请号：US12230954

申请日：2008-09-09

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnumo

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnumo

IPC分类号： H01L33/00

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。