公开(公告)号：US20130056730A1

公开(公告)日：2013-03-07

申请号：US13666248

申请日：2012-11-01

申请人： Satoshi SAKURAI ,  Satoshi GOTO ,  Toru FUJIOKA

发明人： Satoshi SAKURAI ,  Satoshi GOTO ,  Toru FUJIOKA

IPC分类号： H01L25/16

CPC分类号： H01L27/088 ,  H01L21/823425 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0629 ,  H01L27/0635 ,  H01L2223/6644 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01P5/184 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the same layer as a drain wire coupled to the drain region of an LDMOSFET, which will serve as the amplification part of the semiconductor chip. Due to this, the predetermined drain wire is used as a main line and the directional coupler is configured by a sub-line arranged in parallel to the main line via an insulating film, together with the main line.

摘要翻译： 提供了一种能够促进移动电话等中使用的RF功率模块的小型化的技术。 定向耦合器形成在其中形成RF功率模块的放大部分的半导体芯片内部。 定向耦合器的子线形成在与作为半导体芯片的放大部分的LDMOSFET的漏极区域的漏极线相同的层中。 由此，预定的漏极线用作主线，并且定向耦合器与主线一起经由绝缘膜与由主线平行布置的子线构成。

公开(公告)号：US20130072134A1

公开(公告)日：2013-03-21

申请号：US13610237

申请日：2012-09-11

申请人： Satoshi GOTO ,  Kazuaki Hori ,  Satoshi Sakurai

发明人： Satoshi GOTO ,  Kazuaki Hori ,  Satoshi Sakurai

IPC分类号： H01P1/15 ,  H04W88/02 ,  H01P1/10 ,  H04B1/44

CPC分类号： H04B1/109 ,  Y02D70/00

摘要： An attenuating antenna switch may be used to suppress increase in the scale and power consumption of an RFIC. The antenna switch has a first terminal, a second terminal, and an antenna terminal coupled to the first and second terminals and configured to be connected to an antenna. The first switch switches between a first state in which a high frequency signal is propagated between the first terminal and the antenna terminal, and a second state in which the high frequency signal is interrupted. A second switch switches between the first and second states between the second terminal and the antenna terminal. The first and second switches are controlled in a mutually exclusive manner such that only one of the two switches can be in the first state at any given time. When in the first state, each switch adjusts an attenuation amount of the high frequency signal.

摘要翻译： 可以使用衰减天线开关来抑制RFIC的规模和功耗的增加。 天线开关具有耦合到第一和第二端子并被配置为连接到天线的第一端子，第二端子和天线端子。 第一开关在高频信号在第一端子和天线端子之间传播的第一状态和高频信号被中断的第二状态之间切换。 第二开关在第二端子和天线端子之间的第一和第二状态之间切换。 第一和第二开关以相互排斥的方式进行控制，使得两个开关中只有一个可以在任何给定时间处于第一状态。 当处于第一状态时，每个开关调节高频信号的衰减量。

公开(公告)号：US20100285349A1

公开(公告)日：2010-11-11

申请号：US12841223

申请日：2010-07-22

申请人： Satoshi GOTO ,  Hiroshi Hamaguchi ,  Yoshiyuki Ryogoku ,  Aiko Nagano ,  Takashi Kuzuya

发明人： Satoshi GOTO ,  Hiroshi Hamaguchi ,  Yoshiyuki Ryogoku ,  Aiko Nagano ,  Takashi Kuzuya

IPC分类号： H01M6/42 ,  H01M2/02 ,  G01N27/416

CPC分类号： H01M10/484 ,  G01R31/3679 ,  H01M6/36 ,  H01M10/0525 ,  Y02E60/122 ,  Y02T10/7011

摘要： Provided are a lithium-ion secondary battery capable of measuring the concentration of lithium ions in an stored electrolyte in a predetermined portion, an assembled battery using the same, a vehicle and a battery-equipped device equipped with the battery or the assembled battery, a battery system capable of acquiring the concentration-correlated physical quantity in the lithium-ion secondary battery, and a method for detecting the deterioration of the lithium-ion secondary battery. A lithium-ion secondary battery comprises a power generation element including a positive electrode plate and a negative electrode plate, a battery case housing the power generation element, and an electrolyte containing lithium ions and held in the battery case, and further comprises a stored-electrolyte physical quantity measuring means capable of measuring the concentration-correlated physical quantity having a correlation to the concentration of lithium ions in the stored electrolyte stored between the element and the case.

摘要翻译： 提供一种锂离子二次电池，其能够测量预定部分中储存的电解质中的锂离子的浓度，使用该锂离子的组合电池，车辆和配备有电池或组合电池的装有电池的装置， 能够获取锂离子二次电池中的浓度相关物理量的电池系统以及用于检测锂离子二次电池的劣化的方法。 锂离子二次电池包括具有正极板和负极板的发电元件，容纳发电元件的电池壳体和含有锂离子的电解质，并且保持在电池壳体中，还包括： 电解质物理量测量装置，其能够测量与存储在元件和壳体之间的储存电解质中的锂离子浓度相关的浓度相关物理量。

公开(公告)号：US20100188163A1

公开(公告)日：2010-07-29

申请号：US12695192

申请日：2010-01-28

申请人： Satoshi GOTO ,  Tomoyuki Miyake ,  Masao Kondo

发明人： Satoshi GOTO ,  Tomoyuki Miyake ,  Masao Kondo

IPC分类号： H01P1/10 ,  H01L27/12

CPC分类号： H01L21/823425 ,  H01L21/823456 ,  H01L21/823462 ,  H01L27/088

摘要： In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate.Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.

摘要翻译： 考虑到实现天线开关的成本降低，提供了即使当天线开关由在硅衬底上形成的场效应晶体管构成时，也可以尽可能地减少天线开关中产生的谐波失真的技术。 TX系列晶体管，RX系列晶体管和RX分流晶体管中的每一个由低电压MISFET组成，而TX并联晶体管由高电压MISFET组成。 因此，通过减少构成TX并联晶体管的高电压MISFET的串联连接数，可抑制施加到各串联耦合的高电压MISFET的电压幅度的不均匀性。 结果，可以抑制高次谐波的产生。

公开(公告)号：US20220102891A1

公开(公告)日：2022-03-31

申请号：US17474109

申请日：2021-09-14

申请人： Takahiro Akaike ,  Satoshi Goto ,  Isao Suzuki

发明人： Takahiro AKAIKE ,  Satoshi GOTO ,  Isao SUZUKI

IPC分类号： H01R13/05 ,  H01R24/86 ,  H01R12/57 ,  H01R13/504 ,  H01R13/631 ,  H01R13/516

摘要： The plug shell of the electrical connector includes the accommodation portion for accommodating the contact pin and the housing that holds the contact pin, the insertion port for inserting the contact pin and the housing into the accommodation portion, the lid member for closing the insertion port, and the hold mechanism for holding the lid member. The hold mechanism includes the pedestal, on which the lid member is placed, and the pair of hold pieces, which hold the lid member on the pedestal by pressing. The pair of hold pieces press the end portions of the lid member toward the pedestal, so that thereby a stress that urges the end portions to become distant from the pedestal is generated in the lid member.

公开(公告)号：US20130002338A1

公开(公告)日：2013-01-03

申请号：US13606756

申请日：2012-09-07

申请人： Masao KONDO ,  Satoshi GOTO ,  Masatoshi MORIKAWA

发明人： Masao KONDO ,  Satoshi GOTO ,  Masatoshi MORIKAWA

IPC分类号： H03K17/56 ,  H01L29/92

CPC分类号： H01L27/0207 ,  H01L27/1203 ,  H01L28/86 ,  H01L29/94 ,  H04B1/48

摘要： SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced.

摘要翻译： SOI MOSFET用于切换天线开关的晶体管，但谐波失真明显减少。 电容元件分别添加到包括天线开关的接收支路的通过MOSFET组的晶体管的相应的漏极或栅极。 这使得源极和栅极之间的电压幅度以及漏极和栅极之间的电压幅度彼此不同。 结果，源极 - 漏极寄生电容的电压相对于电压的极性变得不对称。 该不对称性产生具有相似不对称性质的信号失真。 因此，可以通过将其设置为与基板电容的电压依赖性相反的二次谐波的振幅和与其相反的相位的振幅相同的幅度来实现以下：可以取消二阶谐波失真 从而可以减少二次谐波失真。

公开(公告)号：US20120292703A1

公开(公告)日：2012-11-22

申请号：US13562380

申请日：2012-07-31

申请人： Satoshi GOTO ,  Tomoyuki Miyake ,  Masao Kondo

发明人： Satoshi GOTO ,  Tomoyuki Miyake ,  Masao Kondo

IPC分类号： H01L27/12

CPC分类号： H01L21/823425 ,  H01L21/823456 ,  H01L21/823462 ,  H01L27/088

摘要： In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate.Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.

摘要翻译： 考虑到实现天线开关的成本降低，提供了即使当天线开关由在硅衬底上形成的场效应晶体管构成时，也可以尽可能地减少天线开关中产生的谐波失真的技术。 TX系列晶体管，RX系列晶体管和RX分流晶体管中的每一个由低电压MISFET组成，而TX并联晶体管由高电压MISFET组成。 因此，通过减少构成TX并联晶体管的高电压MISFET的串联连接数，可抑制施加到各串联耦合的高电压MISFET的电压幅度的不均匀性。 结果，可以抑制高次谐波的产生。

公开(公告)号：US20110001543A1

公开(公告)日：2011-01-06

申请号：US12813852

申请日：2010-06-11

申请人： Masao KONDO ,  Satoshi GOTO ,  Masatoshi MORIKAWA

发明人： Masao KONDO ,  Satoshi GOTO ,  Masatoshi MORIKAWA

IPC分类号： H03K17/56 ,  H01L27/12

CPC分类号： H01L27/0207 ,  H01L27/1203 ,  H01L28/86 ,  H01L29/94 ,  H04B1/48

摘要： SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced.

摘要翻译： SOI MOSFET用于切换天线开关的晶体管，但谐波失真明显减少。 电容元件分别添加到包括天线开关的接收支路的通过MOSFET组的晶体管的相应的漏极或栅极。 这使得源极和栅极之间以及漏极和栅极之间的电压幅度彼此不同。 结果，源极 - 漏极寄生电容的电压相对于电压的极性变得不对称。 该不对称性产生具有相似不对称性质的信号失真。 因此，可以通过将其设置为与基板电容的电压依赖性相反的二次谐波的振幅和与其相反的相位的振幅相同的幅度来实现以下：可以取消二阶谐波失真 从而可以减少二次谐波失真。

公开(公告)号：US20110316062A1

公开(公告)日：2011-12-29

申请号：US13151306

申请日：2011-06-02

申请人： Masao KONDO ,  Masatoshi MORIKAWA ,  Satoshi GOTO

发明人： Masao KONDO ,  Masatoshi MORIKAWA ,  Satoshi GOTO

IPC分类号： H01L29/94

CPC分类号： H01L29/93 ,  H04B1/48

摘要： In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.

摘要翻译： 在实现天线开关的成本降低方面，提供了一种能够最小化在天线开关中产生的谐波失真的技术，即使天线开关特别地由形成在硅衬底上的场效应晶体管形成。 在串联耦合的多个MISFET的源极区域和漏极区域之间，耦合失真补偿电容电路，其具有电压依赖性，使得在基于漏极区域施加正电压的情况下， 基于源极区域的电位，并且基于源极区域的电位将负电压施加到漏极区域，电容降低到比源极区域的电位和电位区域的电位小的值 漏极区域处于相同的电平。