公开(公告)号：US20130056730A1

公开(公告)日：2013-03-07

申请号：US13666248

申请日：2012-11-01

申请人： Satoshi SAKURAI ,  Satoshi GOTO ,  Toru FUJIOKA

发明人： Satoshi SAKURAI ,  Satoshi GOTO ,  Toru FUJIOKA

IPC分类号： H01L25/16

CPC分类号： H01L27/088 ,  H01L21/823425 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0629 ,  H01L27/0635 ,  H01L2223/6644 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01P5/184 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the same layer as a drain wire coupled to the drain region of an LDMOSFET, which will serve as the amplification part of the semiconductor chip. Due to this, the predetermined drain wire is used as a main line and the directional coupler is configured by a sub-line arranged in parallel to the main line via an insulating film, together with the main line.

摘要翻译： 提供了一种能够促进移动电话等中使用的RF功率模块的小型化的技术。 定向耦合器形成在其中形成RF功率模块的放大部分的半导体芯片内部。 定向耦合器的子线形成在与作为半导体芯片的放大部分的LDMOSFET的漏极区域的漏极线相同的层中。 由此，预定的漏极线用作主线，并且定向耦合器与主线一起经由绝缘膜与由主线平行布置的子线构成。

公开(公告)号：US20080237736A1

公开(公告)日：2008-10-02

申请号：US11964217

申请日：2007-12-26

申请人： Satoshi SAKURAI ,  Satoshi Goto ,  Toru FUJIOKA

发明人： Satoshi SAKURAI ,  Satoshi Goto ,  Toru FUJIOKA

IPC分类号： H01L27/06

CPC分类号： H01L27/088 ,  H01L21/823425 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0629 ,  H01L27/0635 ,  H01L2223/6644 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01P5/184 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the same layer as a drain wire coupled to the drain region of an LDMOSFET, which will serve as the amplification part of the semiconductor chip. Due to this, the predetermined drain wire is used as a main line and the directional coupler is configured by a sub-line arranged in parallel to the main line via an insulating film, together with the main line.

摘要翻译： 提供了一种能够促进移动电话等中使用的RF功率模块的小型化的技术。 定向耦合器形成在其中形成RF功率模块的放大部分的半导体芯片内部。 定向耦合器的子线形成在与作为半导体芯片的放大部分的LDMOSFET的漏极区域的漏极线相同的层中。 由此，预定的漏极线用作主线，并且定向耦合器与主线一起经由绝缘膜与由主线平行布置的子线构成。

公开(公告)号：US20070298736A1

公开(公告)日：2007-12-27

申请号：US11764511

申请日：2007-06-18

申请人： Toru FUJIOKA ,  Toshihiko Shimizu ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Satoshi Tanaka

发明人： Toru FUJIOKA ,  Toshihiko Shimizu ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Satoshi Tanaka

IPC分类号： H01Q11/12 ,  H04B1/04

CPC分类号： H03G3/004 ,  H03F1/02 ,  H03F1/0266 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/211 ,  H03F3/24 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/456 ,  H04B2001/045

摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的终端放大功率器件的第一和第二放大器Q 1和Q 2。 放大器Q 1和Q 2形成在一个半导体芯片上。 放大器Q 1的第一偏置电压Vg1被设置为高于放大器Q 2的第二偏置电压Vg ​​2，使得放大器Q 1在B类和AB之间工作，并且Q 2在C类中可操作 放大器Q 1的第一有效器件尺寸Wgq1被有意地设置为小于放大器Q 2的第二有效器件尺寸Wgq 2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。