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公开(公告)号：US07756494B2
公开(公告)日：2010-07-13
申请号：US11764511
申请日：2007-06-18
IPC分类号： H01Q11/12
CPC分类号： H03G3/004 , H03F1/02 , H03F1/0266 , H03F1/0277 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/108 , H03F2200/181 , H03F2200/432 , H03F2200/451 , H03F2200/456 , H04B2001/045
摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.
摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的最终级放大功率器件的第一和第二放大器Q1和Q2。 放大器Q1和Q2形成在一个半导体芯片上。 放大器Q1的第一偏置电压Vg1被设置为高于放大器Q2的第二偏置电压Vg2，使得放大器Q1在B类和AB之间工作，并且Q2在C类中可操作。第一有效器件尺寸 放大器Q1的Wgq1被有意地设置为小于放大器Q2的第二有效器件尺寸Wgq2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。
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公开(公告)号：US20070298736A1
公开(公告)日：2007-12-27
申请号：US11764511
申请日：2007-06-18
CPC分类号： H03G3/004 , H03F1/02 , H03F1/0266 , H03F1/0277 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/108 , H03F2200/181 , H03F2200/432 , H03F2200/451 , H03F2200/456 , H04B2001/045
摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.
摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的终端放大功率器件的第一和第二放大器Q 1和Q 2。 放大器Q 1和Q 2形成在一个半导体芯片上。 放大器Q 1的第一偏置电压Vg1被设置为高于放大器Q 2的第二偏置电压Vg 2，使得放大器Q 1在B类和AB之间工作，并且Q 2在C类中可操作 放大器Q 1的第一有效器件尺寸Wgq1被有意地设置为小于放大器Q 2的第二有效器件尺寸Wgq 2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。
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公开(公告)号：US20100301947A1
公开(公告)日：2010-12-02
申请号：US12814881
申请日：2010-06-14
IPC分类号： H03F3/68
CPC分类号： H03G3/004 , H03F1/02 , H03F1/0266 , H03F1/0277 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/108 , H03F2200/181 , H03F2200/432 , H03F2200/451 , H03F2200/456 , H04B2001/045
摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.
摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的最终级放大功率器件的第一和第二放大器Q1和Q2。 放大器Q1和Q2形成在一个半导体芯片上。 放大器Q1的第一偏置电压Vg1被设置为高于放大器Q2的第二偏置电压Vg2，使得放大器Q1在B类和AB之间工作，并且Q2在C类中可操作。第一有效器件尺寸 放大器Q1的Wgq1被有意地设置为小于放大器Q2的第二有效器件尺寸Wgq2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。
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公开(公告)号：US06943387B2
公开(公告)日：2005-09-13
申请号：US10409455
申请日：2003-04-09
申请人： Isao Ohbu , Tomonori Tanoue , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa , Kazuhiro Mochizuki , Masami Ohnishi , Hidetoshi Matsumoto
发明人： Isao Ohbu , Tomonori Tanoue , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa , Kazuhiro Mochizuki , Masami Ohnishi , Hidetoshi Matsumoto
IPC分类号： H01L21/331 , H01L29/06 , H01L29/423 , H01L29/737 , H03F1/30 , H03F3/19 , H01L31/072
CPC分类号： H01L29/66318 , H01L29/0692 , H01L29/42304 , H01L29/7371 , H01L2924/15153 , H01L2924/1517 , H01L2924/16152 , H03F1/302 , H03F3/19 , H03F2203/21178
摘要： In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows reduction of base/collector junction capacitance per unit emitter area, whereby a semiconductor device having high power adding efficiency and high power gain suitable for a power amplifier can be realized. Further, in a multistage power amplifier including first and second amplifier circuits each having one or more of bipolar transistors, a bipolar transistor in the first amplifier circuit uses an emitter having a planar shape in a rectangular shape, and a bipolar transistor in the second amplifier circuit uses an emitter having a ring-like shape and a base electrode only on the inner side of the emitter.
摘要翻译： 在使用具有环状形状的发射极顶面异质结双极晶体管的半导体器件中，提供了仅在环状发射极 - 基极结区域的内侧存在基极的结构。 这允许减小每单位发射极面积的基极/集电极结电容，由此可以实现具有高功率增加效率和适用于功率放大器的高功率增益的半导体器件。 此外，在包括具有一个或多个双极晶体管的第一和第二放大器电路的多级功率放大器中，第一放大器电路中的双极晶体管使用具有矩形形状的平面形状的发射极和第二放大器中的双极晶体管 电路仅在发射体的内侧使用具有环状形状的发射体和基极。
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公开(公告)号：US07248118B2
公开(公告)日：2007-07-24
申请号：US10830049
申请日：2004-04-23
IPC分类号： H03G3/10
CPC分类号： H03F1/30 , H01L2224/73265 , H03F1/02 , H03F3/195
摘要： A radio frequency power amplifier module that brings sufficient attenuation to a radio frequency signal in a bias supply line connecting a bias control part and a radio frequency power amplifier part without increasing module substrate area is aimed. At least one bonding pad 106 having a capacitance component to a ground and stitch structure inductances 108, 109 composed of a bonding wire 105 provided via the bonding pad are provided in the bias supply line connecting the bias control part and the radio frequency power amplifier part.
摘要翻译： 针对连接偏置控制部分和射频功率放大器部分而不增加模块基板面积的偏置电源线中的射频信号的充分衰减的射频功率放大器模块。 至少一个具有接地电容分量的接合焊盘106和由经由接合焊盘提供的接合线105组成的针脚结构电感108,109设置在偏置电源线中，该偏置电源线连接偏置控制部分和射频功率放大器部分 。
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公开(公告)号：US06949974B2
公开(公告)日：2005-09-27
申请号：US11023414
申请日：2004-12-29
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
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公开(公告)号：US06943624B2
公开(公告)日：2005-09-13
申请号：US10161737
申请日：2002-06-05
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
摘要翻译： 本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。 通过将第一级匹配网络M 12和第一级匹配网络M 13连接到功率放大器单元A11和功率放大器单元A12的相应输出节点，功率放大器单元A 11和功率放大器单元A 12通过切换操作，连接第一级匹配网络 在M12和M13的连接点与输出端子OUT，第一级匹配网络M 12，M 13以及最后一级匹配网络M12之间连接最后一级匹配网络M 11， 对于功率放大器单元A 11和A 12两者形成级匹配网络M 11，使得当一个单元在操作中另一个处于停止操作时在输出端子OUT和功率放大器单元之间建立阻抗匹配 。 本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。
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公开(公告)号：US07408405B2
公开(公告)日：2008-08-05
申请号：US11182859
申请日：2005-07-18
CPC分类号： H03F1/0277 , H03F3/191 , H03F3/72 , H03F2203/7206
摘要： For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.
摘要翻译： 为了在包括大功率放大器和低功率放大器的放大器配置中使用，该功率放大器和低功率放大器总是在高频率下互连，并且在不使用开关的情况下进行开关之间，高稳定的高频功率放大器模块之间具有高隔离度 提供放大器。 为了将处于激活状态的低功率放大器部分的周围环绕到处于去激活状态的高功率放大器部分或者处于激活状态的高功率放大器部分到处于去激活状态的低功率放大器部分， 具有高隔离特性的输入匹配电路包括在与放大器效率无关的输入匹配电路部分中。 每个放大器部分在激活状态和去激活状态之间的切换通过使用偏置输入端的控制来实现。
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公开(公告)号：US07102427B2
公开(公告)日：2006-09-05
申请号：US10922146
申请日：2004-08-20
CPC分类号： H03F1/0227 , H03F2200/432
摘要： An amplifier using a wide band, high efficiency, and low distortion amplifier free from clipping distortion, and a high efficiency and low distortion radio frequency power amplifier, using that amplifier, which can be applied to wide band wireless communication systems are provided. The amplifier has a DC—DC converter 2, augmented with a low pass filter 4, for amplifying the low frequency components of an input signal from a terminal 5, and a class B amplifier, augmented with a high pass filter, for amplifying the input signal and supplying its high frequency components after amplification. The DC—DC converter and the class B amplifier are connected in parallel, and the power supply voltage of the class B amplifier is controlled with the low frequency components of the input signal.
摘要翻译： 提供了一种使用宽带，高效率和低失真放大器的放大器，无限幅失真，以及高效率和低失真射频功率放大器，使用该放大器，可应用于宽带无线通信系统。 放大器具有DC-DC转换器2，增强了低通滤波器4，用于放大来自端子5的输入信号的低频分量，以及增加了高通滤波器的B类放大器，用于放大输入 信号并在放大后提供其高频分量。 DC-DC转换器和B类放大器并联，B类放大器的电源电压由输入信号的低频分量控制。
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公开(公告)号：US20050110573A1
公开(公告)日：2005-05-26
申请号：US11023414
申请日：2004-12-29
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
摘要翻译： 本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。 通过将第一级匹配网络M12和第一级匹配网络M13连接到通过切换操作的功率放大器单元A11和功率放大器单元A12的各个输出节点，连接第一级匹配网络M12的输出节点 M13并联连接M12和M13的连接点与输出端子OUT之间的最后一级匹配网络M11，形成第一级匹配网络M12，M13和最后级匹配网络M11，用于功率放大器 单元A11和A12，使得当一个单元在操作中另一个处于停止操作时，在操作中在输出端子OUT和功率放大器单元之间建立阻抗匹配。 本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。
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