公开(公告)号：US20100301947A1

公开(公告)日：2010-12-02

申请号：US12814881

申请日：2010-06-14

申请人： Toru Fujioka ,  Toshihiko Shimizu ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Satoshi Tanaka

发明人： Toru Fujioka ,  Toshihiko Shimizu ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Satoshi Tanaka

IPC分类号： H03F3/68

CPC分类号： H03G3/004 ,  H03F1/02 ,  H03F1/0266 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/211 ,  H03F3/24 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/456 ,  H04B2001/045

摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的最终级放大功率器件的第一和第二放大器Q1和Q2。 放大器Q1和Q2形成在一个半导体芯片上。 放大器Q1的第一偏置电压Vg1被设置为高于放大器Q2的第二偏置电压Vg2，使得放大器Q1在B类和AB之间工作，并且Q2在C类中可操作。第一有效器件尺寸 放大器Q1的Wgq1被有意地设置为小于放大器Q2的第二有效器件尺寸Wgq2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。

公开(公告)号：US07756494B2

公开(公告)日：2010-07-13

申请号：US11764511

申请日：2007-06-18

申请人： Toru Fujioka ,  Toshihiko Shimizu ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Satoshi Tanaka

发明人： Toru Fujioka ,  Toshihiko Shimizu ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Satoshi Tanaka

IPC分类号： H01Q11/12

CPC分类号： H03G3/004 ,  H03F1/02 ,  H03F1/0266 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/211 ,  H03F3/24 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/456 ,  H04B2001/045

摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的最终级放大功率器件的第一和第二放大器Q1和Q2。 放大器Q1和Q2形成在一个半导体芯片上。 放大器Q1的第一偏置电压Vg1被设置为高于放大器Q2的第二偏置电压Vg2，使得放大器Q1在B类和AB之间工作，并且Q2在C类中可操作。第一有效器件尺寸 放大器Q1的Wgq1被有意地设置为小于放大器Q2的第二有效器件尺寸Wgq2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。

公开(公告)号：US20070298736A1

公开(公告)日：2007-12-27

申请号：US11764511

申请日：2007-06-18

申请人： Toru FUJIOKA ,  Toshihiko Shimizu ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Satoshi Tanaka

发明人： Toru FUJIOKA ,  Toshihiko Shimizu ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Satoshi Tanaka

IPC分类号： H01Q11/12 ,  H04B1/04

CPC分类号： H03G3/004 ,  H03F1/02 ,  H03F1/0266 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/211 ,  H03F3/24 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/456 ,  H04B2001/045

摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的终端放大功率器件的第一和第二放大器Q 1和Q 2。 放大器Q 1和Q 2形成在一个半导体芯片上。 放大器Q 1的第一偏置电压Vg1被设置为高于放大器Q 2的第二偏置电压Vg ​​2，使得放大器Q 1在B类和AB之间工作，并且Q 2在C类中可操作 放大器Q 1的第一有效器件尺寸Wgq1被有意地设置为小于放大器Q 2的第二有效器件尺寸Wgq 2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。

公开(公告)号：US06825548B2

公开(公告)日：2004-11-30

申请号：US10455458

申请日：2003-06-06

申请人： Toru Fujioka ,  Isao Yoshida ,  Toshihiko Shimizu

发明人： Toru Fujioka ,  Isao Yoshida ,  Toshihiko Shimizu

IPC分类号： H01L23495

CPC分类号： H01L23/66 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/4824 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/20755 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00014 ,  H01L2924/00

摘要： It is to be made possible to eliminate unevenness of the inductances of bonding wires and to reduce the size of semiconductor devices. Over the surface of a semiconductor device in whose MISFET formation area a MISFET comprising a plurality of unit MISFETs connected in parallel, gate electrode pads electrically connected to the gate electrode of the MISFET and drain electrode pads electrically connected to the drain electrode of the same are arranged in a row each. The intervals of the gate electrode pads become gradually shorter from the end areas towards the central area of the electrode array of the gate electrode pads. The intervals of the drain electrode pads also become gradually shorter from the end areas towards the central area of the electrode array of the drain electrode pads.

摘要翻译： 可以消除接合线的电感的不均匀性并减小半导体器件的尺寸。 在其MISFET形成区域中包括并联连接的多个单位MISFET的MISFET的半导体器件的表面上，与MISFET的栅电极电连接的栅极电极焊盘和与该漏极电极连接的漏电极焊盘是 排列成排。 栅极电极焊盘的间隔从栅极电极焊盘的电极阵列的端部区域朝向中心区域逐渐变短。 漏电极焊盘的间隔也从漏电极焊盘的电极阵列的端部区域朝向中心区域逐渐变短。

公开(公告)号：US08537500B2

公开(公告)日：2013-09-17

申请号：US12981254

申请日：2010-12-29

申请人： Teruhiro Nakamiya ,  Keiko Watanabe ,  Toshihiko Shimizu ,  Noritaka Ootake ,  Takeji Sumiya ,  Takashi Tomita ,  Takahisa Okada

发明人： Teruhiro Nakamiya ,  Keiko Watanabe ,  Toshihiko Shimizu ,  Noritaka Ootake ,  Takeji Sumiya ,  Takashi Tomita ,  Takahisa Okada

IPC分类号： G11B5/48 ,  G11B21/21

CPC分类号： G11B5/5573 ,  G11B5/4833

摘要： A magnetic disk device including a disk, a spindle motor, a base for supporting the spindle motor and the disk, a slider includes a head element. The device also includes an actuator including arms for supporting the slider and a coil of a voice coil motor for rotating the arms, wherein a first natural bending frequency of the coil is less than a first natural bending frequency of the arms.

摘要翻译： 一种磁盘装置，包括盘，主轴电机，用于支撑主轴电机和盘的底座，滑块包括头元件。 该装置还包括具有用于支撑滑动件的臂和用于旋转臂的音圈电机的线圈的致动器，其中线圈的第一自然弯曲频率小于臂的第一自然弯曲频率。

公开(公告)号：US07525759B2

公开(公告)日：2009-04-28

申请号：US11222566

申请日：2005-09-09

申请人： Takehiko Eguchi ,  Masayuki Kurita ,  Toshihiko Shimizu ,  Mikio Tokuyama

发明人： Takehiko Eguchi ,  Masayuki Kurita ,  Toshihiko Shimizu ,  Mikio Tokuyama

IPC分类号： G11B5/39

CPC分类号： G11B33/1493

摘要： Embodiments of the invention provide a magnetic disk device which improves the shielding function for the magnetic heads while maintaining a form factor having an inexpensive constitution. In one embodiment, a magnetic disk device comprises a rotary disk-type magnetic disk; a magnetic head for recording or reproducing information; a magnetic head support mechanism for supporting the magnetic head; a shroud having an opening in which the magnetic head support mechanism is inserted, and surrounding the outer circumference of the magnetic disk; and a housing. The housing includes a base and a cover, and accommodates the magnetic disk, the magnetic head, the magnetic head support mechanism and the shroud. The base is constituted by using a nonmagnetic material and the shroud is constituted by using a magnetic material.

摘要翻译： 本发明的实施例提供了一种磁盘装置，其在保持具有便宜构造的形状因素的同时提高了磁头的屏蔽功能。 在一个实施例中，磁盘装置包括旋转盘式磁盘; 用于记录或再现信息的磁头; 用于支撑磁头的磁头支撑机构; 具有开口的护罩，其中磁头支撑机构插入其中，并围绕磁盘的外周; 和住房。 壳体包括基座和盖，并且容纳磁盘，磁头，磁头支撑机构和护罩。 底座由使用非磁性材料构成，护罩由磁性材料构成。

公开(公告)号：US20080112299A1

公开(公告)日：2008-05-15

申请号：US11985123

申请日：2007-11-13

申请人： Toshihiko Shimizu ,  Keiko Watanabe

发明人： Toshihiko Shimizu ,  Keiko Watanabe

IPC分类号： G11B33/02

CPC分类号： G11B33/1466 ,  G11B33/1433

摘要： Embodiments of present invention help to realize a highly reliable magnetic disk drive by preventing a positional displacement between a magnetic head and a target track by decreasing restricting forces that a cover exerts on a base when the temperature is increased. According to one embodiment, a base is formed by aluminum die casting, has a concave, rectangular parallelepiped shape, and is formed with step portions at the four corners. A cover is a flat plate of stainless steel or iron. Four corner portions of the cover are bent to form step portions. The cover is fixed to the base at the four corners with bolts at two side positions (six positions in total). A gasket is inserted at that time to enhance the sealing performance. Since the gasket is a member like a rubber packing, it is necessary to press the gasket with the flat portions of the base and the cover To this end, the gasket is placed on top of the base step portions and the connection between the cover and the base at the four corners is made under the base step portions.

摘要翻译： 本发明的实施例有助于通过在温度升高时通过减小盖施加在基座上的限制力来防止磁头和目标轨道之间的位置偏移来实现高度可靠的磁盘驱动。 根据一个实施例，基座由铝压铸形成，具有凹形的长方体形状，并且在四个角部形成有台阶部分。 盖是不锈钢或铁的平板。 盖的四个角部弯曲以形成台阶部。 盖子通过两个侧面位置的螺栓（总共六个位置）固定在四个角落的基座上。 此时插入垫圈以增强密封性能。 由于垫圈是像橡胶垫片的构件，因此需要用基座和盖子的平坦部分按压垫圈。为此，垫圈被放置在基座台阶部分的顶部，盖子和 在四个角落处的基部形成在基底台阶部下方。

公开(公告)号：US07215203B2

公开(公告)日：2007-05-08

申请号：US11414337

申请日：2006-05-01

申请人： Yoshikuni Matsunaga ,  Toshihiko Shimizu ,  Tomio Furuya ,  Nobuhiro Matsudaira ,  Koichi Matsushita

发明人： Yoshikuni Matsunaga ,  Toshihiko Shimizu ,  Tomio Furuya ,  Nobuhiro Matsudaira ,  Koichi Matsushita

IPC分类号： H03G3/30

CPC分类号： H03F1/0261 ,  H03F2200/465 ,  H03G1/0017 ,  H03G3/3042 ,  H03G3/3047

摘要： A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

摘要翻译： 多级高频功率放大器电路装置具有串联连接的多个半导体放大元件。 电路装置设置有偏置控制电路，用于控制各级输出半导体放大元件的偏置电压或偏置电流，以便减少相对于周围区域内的功率控制信号电压的输出功率的变化 半导体放大元件的阈值电压。 这实现了在使用诸如功率控制信号的这种控制电压实现的低功率输出时，输出功率具有优异的可控制性和高效率的高频功率放大器电路器件。

公开(公告)号：US20070002497A1

公开(公告)日：2007-01-04

申请号：US11516608

申请日：2006-09-07

申请人： Toshihiko Shimizu ,  Tetsuya Hamaguchi ,  Toshihiro Arisaka ,  Hiromitsu Masuda ,  Gentaro Nakamura ,  Takenori Atsumi

发明人： Toshihiko Shimizu ,  Tetsuya Hamaguchi ,  Toshihiro Arisaka ,  Hiromitsu Masuda ,  Gentaro Nakamura ,  Takenori Atsumi

IPC分类号： G11B5/55

CPC分类号： G11B5/4833 ,  G11B5/4813 ,  G11B5/5526 ,  G11B5/5582

摘要： A carriage includes a slider on which a magnetic head for reading/writing information from/to a disk is mounted, a suspension for carrying the slider and for applying a predetermined load to the slider, a carriage arm to which the suspension is attached, and a body section to which the carriage arm is connected. The carriage arm includes a suspension fixing portion, as arm arranged substantially in parallel with a disk surface, and a restricting member which is a thin-plate-like member having a surface which is opposite to the plane of arm which is parallel to the disk surface. The restricting member and the arm are coupled via a viscoelastic body.

摘要翻译： 一种滑架，其上安装有用于从/向盘读取/写入信息的磁头的滑块，用于承载滑块并用于向滑块施加预定负载的悬架，附接有悬架的滑架臂，以及 连接有托架臂的主体部分。 托架臂包括悬挂固定部分，作为布置成基本上与盘表面平行的臂，以及限制构件，其是具有与臂的平面相反的表面的薄板状构件，该平面平行于盘 表面。 限制构件和臂通过粘弹性体联接。

公开(公告)号：US07116175B2

公开(公告)日：2006-10-03

申请号：US10890281

申请日：2004-07-14

申请人： Toshihiko Shimizu ,  Yoshikuni Matsunaga ,  Yuri Kusakari

发明人： Toshihiko Shimizu ,  Yoshikuni Matsunaga ,  Yuri Kusakari

IPC分类号： H03F3/14

CPC分类号： H03F3/195 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/68 ,  H03F2200/111 ,  H03F2200/451 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.