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1.发明授权
公开(公告)号：US5379225A
公开(公告)日：1995-01-03
申请号：US904006
申请日：1992-06-24
CPC分类号： G06T17/00 , G06F17/5018 , G06F2217/74
摘要： A method for efficient calculation of the movement of a vertex in a three-dimensional topography simulator. The method is particularly well suited for calculating vertex movement for cases in which an etch/deposition rate depends on the angle between the surface normal and the vertical direction. A workpiece is represented as a collection of material solids. Each of the material solids has a boundary model representation, which include vertices, edges and faces. The method of the present invention generally includes the steps of: identifying a first plane, a second plane and a third plane that approximate all the planes that are adjacent to a vertex point to be moved; determining a first observation vector; creating a set of advanced virtual planes; identifying a second observation vector; determining the furthest intersection point of one of the planes in the set of advanced planes and the second observation vector; and moving the vertex to the point identified in the prior step.
摘要翻译： 一种用于有效计算三维地形模拟器中顶点运动的方法。 该方法特别适合于在蚀刻/沉积速率取决于表面法线和垂直方向之间的角度的情况下计算顶点移动。 工件被表示为材料固体的集合。 每个材料实体都有一个边界模型表示，其中包括顶点，边和面。 本发明的方法通常包括以下步骤：识别接近要移动的顶点的所有平面的第一平面，第二平面和第三平面; 确定第一观察向量; 创建一套先进的虚拟飞机; 识别第二观测向量; 确定先进平面集合中的一个平面的最远交点和第二观察向量; 并将顶点移动到在先前步骤中识别的点。
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2.发明授权Method for accurate calculation of vertex movement for three-dimensional topography simulation 失效用于三维地形模拟的顶点运动的精确计算方法
公开(公告)号：US5377118A
公开(公告)日：1994-12-27
申请号：US252062
申请日：1994-06-01
CPC分类号： G06T17/20 , G06F17/5018 , G06F2217/74
摘要： A method for accurately calculating the movement of a vertex in a three-dimensional (3-D) topography simulator. The method is particularly suited for calculating vertex movement for cases in which etch/deposition rate depends on the angle between the surface normal and the vertical direction. A workpiece is represented as a collection of material solids. Each of the material solids has a boundary model representation. The method of the present invention is comprised primarily of the steps of: advancing edges and surface planes adjacent to the vertex, creating a set of 2-D solutions by clipping with pairs of adjacent surface planes; creating a set of combined 2-D solutions by clipping invalid sections of combined 2-D solutions; construct an arbitrary vertical plane that intersects the surface at the vertex point; constructing vertex trajectories for the vertex to be moved; and clipping constructed vertex trajectories at intersections of created surface and the constructed vertical plane.
摘要翻译： 一种精确计算三维（3-D）地形模拟器中顶点移动的方法。 该方法特别适合于在蚀刻/沉积速率取决于表面法线和垂直方向之间的角度的情况下计算顶点移动。 工件被表示为材料固体的集合。 每个材料实体都具有边界模型表示。 本发明的方法主要包括以下步骤：使靠近顶点的边缘和表面平行前进，通过相邻的表面平面对剪切形成一组二维解; 通过剪切合并的2-D解决方案的无效部分创建一组组合的二维解决方案; 构造在顶点与表面相交的任意垂直平面; 构造要移动的顶点的顶点轨迹; 并在创建的表面和构造的垂直平面的交点处剪切构造的顶点轨迹。
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公开(公告)号：US5416729A
公开(公告)日：1995-05-16
申请号：US331159
申请日：1994-10-28
CPC分类号： G06T17/00 , G06F17/5018 , G06F2217/74
摘要： A topography simulator using a "Generalized Solid Modeling (GSM) method" to simulate isotropic or anisotropic deposition and etch process steps on a workpiece. A solids modeling system that utilizes a boundary representation model for representing material object solids provides a basis for the topography simulator. A workpiece in the model is comprised of a collection of material solids. The present invention provides for accurately representing the interfaces of different material solids. The airspace above the top surface material is defined as an air solid. Boolean set operations between the various material solids and the air solid are performed to deform the wafer topography. The present invention further provides means for simulating an etch process step at the interface of materials with different etch rates.
摘要翻译： 使用“广义实体建模（GSM）方法”的地形模拟器来模拟工件上的各向同性或各向异性沉积和蚀刻工艺步骤。 利用边界表示模型表示材料对象固体的实体建模系统为地形模拟器提供了基础。 模型中的工件由材料固体的集合组成。 本发明提供了准确地表示不同材料固体的界面。 顶表面材料上方的空域被定义为空气固体。 执行各种材料固体和空气固体之间的布尔集合操作以使晶片形貌变形。 本发明还提供了用于模拟在具有不同蚀刻速率的材料的界面处的蚀刻工艺步骤的装置。
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4.发明授权
公开(公告)号：US5367465A
公开(公告)日：1994-11-22
申请号：US904005
申请日：1992-06-24
IPC分类号： H01L21/302 , G06F17/50 , G06T17/20 , H01L21/3065 , G06F15/72
CPC分类号： G06T17/20
摘要： A method for creating regular triangular grid representations of a solid surface from a representation comprised of a plurality of polygons. Such a regular grid is necessary in order to accurately deform a solid during simulation of a process step. The method of the preferred embodiment is comprised generally of the steps of: removing any holes defined by the polygon face; placing a new edge between a first and second vertex of the polygon face; discarding the new edge if the new edge lies outside the polygon face or if the new edge intersects an existing edge of the polygon face; adding the new edge to the polygon face if the new edge does not lie outside the polygon face; identifying a triangle being created by the new edge and existing edges of the polygon; forming a new polygon face from the edges creating a triangle; and repeating the above steps until all polygon faces are triangulated. Once the triangulation of the polygons is completed, adjustments to the triangles is made in order to have only triangles of uniform size.
摘要翻译： 一种从由多个多边形构成的表示形成固体表面的规则三角形网格表示的方法。 为了在模拟过程步骤期间准确地变形固体，需要这样的规则网格。 优选实施例的方法通常包括以下步骤：去除由多边形面限定的任何孔; 在多边形面的第一和第二顶点之间放置新的边缘; 如果新边缘位于多边形面之外或如果新边缘与多边形面的现有边缘相交，则丢弃新边缘; 如果新边缘不在多边形面之外，则将新边添加到多边形面; 识别由新边缘和多边形的现有边缘创建的三角形; 从边缘形成新的多边形面，创建三角形; 并重复上述步骤直到所有多边形面被三角测量。 一旦完成了多边形的三角测量，就可以对三角形进行调整，以便仅具有均匀尺寸的三角形。
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5.发明授权Surface sweeping method for surface movement in three dimensional topography simulation 失效三维地形模拟中表面移动的表面扫描方法
公开(公告)号：US5586230A
公开(公告)日：1996-12-17
申请号：US148181
申请日：1993-11-05
申请人： Francisco A. Leon , Satoshi Tazawa
发明人： Francisco A. Leon , Satoshi Tazawa
CPC分类号： G06T17/10
摘要： A method for deforming a solid and avoiding the creation of self-intersecting solid structures in a topography simulator. In a topography simulated based on a solids modeling system, self-intersecting structures are solids which have boundaries that intersect. Such self-intersecting structures are invalid and cannot be processed. A general method for sweeping a solid surface to create a deformed solid and avoid the creation of self-intersecting solid structures is described, which include the steps of: providing a material solid with a surface represented as one or more segments; constructing a first segment solid for a first segment; performing a boolean set operation between the solid being swept and the first segment solid creating a temporary first solid; identifying a second segment; constructing a second segment solid for the second segment; and performing the boolean set operation between said temporary first solid and said first segment solid creating said deformed first solid. The case where simultaneous deposition and etch is occurring requires utilizes separate temporary deposition and etch solids for each segment both of which are swept to create the deformed solid.
摘要翻译： 一种使固体变形并避免在地形模拟器中产生自相交固体结构的方法。 在基于实体建模系统模拟的地形中，自相交结构是具有相交边界的固体。 这种自相交结构无效，无法处理。 描述了用于扫掠固体表面以产生变形固体并避免产生自相交固体结构的一般方法，其包括以下步骤：提供具有表示为一个或多个段的表面的材料固体; 为第一段构造第一段固体; 在被扫描的实体和创建临时的第一实体的第一段固定之间执行布尔组操作; 识别第二段; 为第二段构造第二段实体; 以及在所述临时第一实体和所述第一段固体之间执行布尔组合操作，创建所述变形的第一固体。 同时沉积和蚀刻发生的情况需要对每个段进行单独的临时沉积和蚀刻固体，两个扫描都被扫过以产生变形的固体。
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公开(公告)号：US5644688A
公开(公告)日：1997-07-01
申请号：US398410
申请日：1995-03-02
CPC分类号： G06T17/20
摘要： A method for simulating changes to the topography of a workpiece, e.g. a semiconductor wafer, as it undergoes process steps. The method may be used to simulated isotropic or anisotropic deposition or etch process steps. A solids modeling system is used to define and deform material solids. Material solids represent the different materials on a workpiece. A plurality of trajectory solids are constructed to cause the deformation of the material solids. Deformation of a material solid is accomplished through the performance of boolean operations between the material solid and one or more trajectory solids. A characteristic of a trajectory solid, e.g. a radius or height, relates to the rate of etch or deposition for the particular process step. The method of construction of trajectory solids in the present invention enables simulation of spatially varying process steps, avoids the creation of invalid self-intersecting surfaces and minimizes the creation of small edges that lead to irregular surfaces.
摘要翻译： 用于模拟工件的形貌变化的方法，例如， 半导体晶片，因为它经历了工艺步骤。 该方法可用于模拟各向同性或各向异性沉积或蚀刻工艺步骤。 固体建模系统用于定义和变形材料固体。 材料固体表示工件上的不同材料。 多个轨迹固体被构造成引起材料固体的变形。 通过在材料固体和一个或多个轨迹固体之间执行布尔运算来实现材料固体的变形。 轨迹固体的特征，例如。 半径或高度涉及特定工艺步骤的蚀刻或沉积速率。 在本发明中构造轨迹固体的方法能够模拟空间变化的工艺步骤，避免产生无效的自相交表面并且最小化导致不规则表面的小边缘的产生。
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公开(公告)号：US5282140A
公开(公告)日：1994-01-25
申请号：US904001
申请日：1992-06-24
申请人： Satoshi Tazawa , Tetsuya Abe , Francisco A. Leon
发明人： Satoshi Tazawa , Tetsuya Abe , Francisco A. Leon
CPC分类号： G06F17/5018 , G06F2217/16
摘要： In a three-dimensional (3-D) topography simulator, a method for removing sources of particle flux because of neighboring topology, for a point on a workpiece undergoing a deposition or etch process step. The method is practiced in a Generalized Solids Modeling system that utilizes a boundary representation model for representing a workpiece as one or more material object solids. For any given point on the 3-D structure, the neighboring topography forms a complex shadowing mask with respect to sources of particle flux, thus making analytical determination of visible sources of incoming particle flux difficult. The method is comprised generally of the steps of: defining a numerical mesh in a space over a surface of the workpiece; specifying an intensity of incident flux for each mesh point, identifying a set of mesh points defining a visible range of mesh points with respect to a particular target point and identifying mesh points in said set of mesh points that are obscured by neighboring topology.
摘要翻译： 在三维（3-D）地形模拟器中，由于相邻的拓扑结构，用于去除经历沉积或蚀刻工艺步骤的工件上的点的方法。 该方法在通用固体建模系统中实施，其利用用于将工件表示为一个或多个材料对象固体的边界表示模型。 对于3-D结构上的任何给定点，相邻的形貌相对于粒子通量来源形成复杂的阴影掩模，从而使进入的颗粒通量的可见光源的分析测定困难。 该方法通常包括以下步骤：在工件的表面上的空间中定义数字网格; 指定每个网格点的入射通量的强度，识别一组网格点，其定义相对于特定目标点的网格点的可见范围，并识别所述网格点集合中被相邻拓扑遮蔽的网格点。
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8.发明授权公开(公告)号：US07760980B2
公开(公告)日：2010-07-20
申请号：US11514291
申请日：2006-08-31
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/1347 , G02B6/136 , G02B2006/12097 , G02B2006/121 , G02B2006/12123 , G02B2006/12176 , H01L31/02327 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.
摘要翻译： 一种在光波导中在基板上制造光检测器的方法，所述方法包括：在所述基板的表面上形成至少一层，所述至少一层包括SiGe; 在第一区域上将杂质注入到所述至少一个层中以形成用于所述光学检测器的检测器区域; 在第一区域和第二区域中蚀刻到所述至少一个层中以在所述第一和第二区域之间形成脊，所述脊限定所述光学检测器和所述光波导; 用具有比SiGe低的折射率的电介质材料填充第一和第二区域; 并且在用电介质材料填充第一和第二区域之后，去除表面材料以形成平坦化的上表面。
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9.发明授权Technique for fabricating phase shift masks using self-aligned spacer formation 有权使用自对准间隔物形成制造相移掩模的技术
公开(公告)号：US6103429A
公开(公告)日：2000-08-15
申请号：US161844
申请日：1998-09-28
摘要： A technique for fabricating a phase shift mask with multiple phase shifts by using self-aligned spacers to form phase shifting regions on a surface of a mask substrate. Three phase shifting regions are formed corresponding to 180.degree./120.degree./60.degree. phase shifts or delays on the surface of mask substrate. The three phase shifting regions are fabricated from three different dielectric materials, each having a different refractive indices. The first phase shifting region is formed by a photolithography technique, but the other two phase shifting regions are formed by the formation of self-aligned spacers. In an alternative technique, all three of the phase shifting regions are formed by the use of self-aligned spacers.
摘要翻译： 一种通过使用自对准隔板来制造具有多个相移的相移掩模以在掩模基板的表面上形成相移区域的技术。 形成对应于掩模基板表面上的180°/ 120°/ 60°相移或延迟的三个相移区域。 三个相移区域由三种不同的介电材料制成，各自具有不同的折射率。 通过光刻技术形成第一相移区域，但是通过形成自对准间隔物形成其它两个相移区域。 在替代技术中，通过使用自对准间隔物形成所有三个相移区域。
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公开(公告)号：US20090269878A1
公开(公告)日：2009-10-29
申请号：US12420558
申请日：2009-04-08
IPC分类号： H01L21/20
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译： 一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。
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