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    Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers
    8.
    发明授权
    Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers 有权
    钝化包含铁电电容器和氢屏障的集成电路

    公开(公告)号：US08384190B2

    公开(公告)日：2013-02-26

    申请号：US12717604

    申请日：2010-03-04

    申请人： Scott R. Summerfelt ,  Ted S. Moise ,  Gul B. Basim

    发明人： Scott R. Summerfelt ,  Ted S. Moise ,  Gul B. Basim

    IPC分类号： H01L21/02

    CPC分类号： H01L21/3185 ,  H01L21/0217 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5223 ,  H01L27/11509 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit that includes a logic region, a buffer region, and a ferroelectric capacitor region that contains ferroelectric capacitors. The integrated circuit also includes a hydrogen diffusion barrier film that overlies ferroelectric capacitors and also overlies a buffer region located between a ferroelectric capacitor region and a logic region. However, the hydrogen diffusion barrier film is removed from a portion of the logic region. Moreover, a method for forming a hydrogen barrier layer that overlies ferroelectric capacitors and a buffer region but is removed from a portion of the logic region.

    摘要翻译： 一种包括逻辑区域，缓冲区域和包含铁电电容器的铁电电容器区域的集成电路。 集成电路还包括覆盖铁电电容器的氢扩散阻挡膜，并且还覆盖位于铁电电容器区域和逻辑区域之间的缓冲区域。 然而，氢扩散阻挡膜从逻辑区域的一部分去除。 此外，形成氢屏障层的方法，该阻挡层覆盖铁电电容器和缓冲区域，但是从逻辑区域的一部分去除。

    PASSIVATION OF INTEGRATED CIRCUITS CONTAINING FERROELECTRIC CAPACITORS AND HYDROGEN BARRIERS
    9.
    发明申请
    PASSIVATION OF INTEGRATED CIRCUITS CONTAINING FERROELECTRIC CAPACITORS AND HYDROGEN BARRIERS 有权
    含有电解电容器和氢气障碍物的集成电路的钝化

    公开(公告)号：US20100224961A1

    公开(公告)日：2010-09-09

    申请号：US12717604

    申请日：2010-03-04

    申请人： Scott R. Summerfelt ,  Ted S. Moise ,  Gul B. Basim

    发明人： Scott R. Summerfelt ,  Ted S. Moise ,  Gul B. Basim

    IPC分类号： H01L29/92 ,  H01L21/302

    CPC分类号： H01L21/3185 ,  H01L21/0217 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5223 ,  H01L27/11509 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit that includes a logic region, a buffer region, and a ferroelectric capacitor region that contains ferroelectric capacitors. The integrated circuit also includes a hydrogen diffusion barrier film that overlies ferroelectric capacitors and also overlies a buffer region located between a ferroelectric capacitor region and a logic region. However, the hydrogen diffusion barrier film is removed from a portion of the logic region. Moreover, a method for forming a hydrogen barrier layer that overlies ferroelectric capacitors and a buffer region but is removed from a portion of the logic region.

    摘要翻译： 一种包括逻辑区域，缓冲区域和包含铁电电容器的铁电电容器区域的集成电路。 集成电路还包括覆盖铁电电容器的氢扩散阻挡膜，并且还覆盖位于铁电电容器区域和逻辑区域之间的缓冲区域。 然而，氢扩散阻挡膜从逻辑区域的一部分去除。 此外，形成氢屏障层的方法，该阻挡层覆盖铁电电容器和缓冲区域，但是从逻辑区域的一部分去除。