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    Solid state image pickup device and manufacturing method therefor
    9.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号：US08395193B2

    公开(公告)日：2013-03-12

    申请号：US13364601

    申请日：2012-02-02

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L29/76

    CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

    摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.

    摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。 传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。 另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。 第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

    Semiconductor device and method of manufacturing the same
    10.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US08183670B2

    公开(公告)日：2012-05-22

    申请号：US11651034

    申请日：2007-01-09

    申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

    发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

    IPC分类号： H01L29/04

    CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

    摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

    摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。