-
公开(公告)号:US20180061638A1
公开(公告)日:2018-03-01
申请号:US15687855
申请日:2017-08-28
CPC分类号: H01L31/1892 , H01L21/02345 , H01L21/02488 , H01L21/02694 , H01L21/6835 , H01L27/1266 , H01L29/66969 , H01L31/1896 , H01L51/003 , H01L2221/68386 , H01L2224/83052 , H01L2924/35121
摘要: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.
-
公开(公告)号:US20170200659A1
公开(公告)日:2017-07-13
申请号:US14990902
申请日:2016-01-08
发明人: Michael Gaynes , Jeffrey Gelorme , Thomas Brunschwiler , Brian Burg , Gerd Schlottig , Jonas Zuercher
CPC分类号: H01L23/295 , H01L21/561 , H01L21/563 , H01L22/14 , H01L22/20 , H01L23/3185 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/0655 , H01L2224/04026 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/131 , H01L2224/16225 , H01L2224/29007 , H01L2224/2901 , H01L2224/29194 , H01L2224/2929 , H01L2224/29339 , H01L2224/29347 , H01L2224/29499 , H01L2224/32057 , H01L2224/32225 , H01L2224/32227 , H01L2224/73204 , H01L2224/83002 , H01L2224/83048 , H01L2224/83052 , H01L2224/83097 , H01L2224/83104 , H01L2224/83192 , H01L2224/83447 , H01L2224/83935 , H01L2224/83986 , H01L2224/92125 , H01L2924/00 , H01L2924/00014 , H01L2924/013 , H01L2224/06 , H01L2924/014
摘要: The disclosure generally relates to methods for manufacturing a filled gap region or cavity between two surfaces forming a device microchip. In one embodiment, the cavity results from two surfaces, for example, a PCB and a chip or two chips. More specifically, the disclosure relates to a method of manufacture and the resulting apparatus having porous underfill to enable rework of the electrical interconnects of a microchip on a multi-chip module. In one embodiment, the disclosure builds on the thermal underfill concept and achieves high thermal conductivity by the use of alumina fillers. Alternatively, other material such as silica filler particles may be selected to render the underfill a poor thermal conductive. In one embodiment, the disclose is concerned with reworkability of the material.
-
公开(公告)号:US20180151404A1
公开(公告)日:2018-05-31
申请号:US15570361
申请日:2016-05-11
申请人: RFHIC Corporation
发明人: Daniel FRANCIS
IPC分类号: H01L21/683 , H01L23/373 , H01L21/762 , H01L21/02 , H01L23/00
CPC分类号: H01L21/6835 , H01L21/02378 , H01L21/02389 , H01L21/02458 , H01L21/02527 , H01L21/02595 , H01L21/0262 , H01L21/02658 , H01L21/304 , H01L21/3065 , H01L21/7624 , H01L23/3732 , H01L24/29 , H01L24/83 , H01L24/98 , H01L2221/68345 , H01L2221/68381 , H01L2224/29193 , H01L2224/83052 , H01L2224/83192 , H01L2224/83224 , H01L2924/01014 , H01L2924/10272 , H01L2924/10323 , H01L2924/1033 , H01L2924/10344
摘要: A method of fabricating a semiconductor-on-diamond composite substrate, the method comprising: (i) starting with a native semiconductor wafer comprising a native silicon carbidesubstrate on which a compound semiconductor is disposed; (ii) bonding a silicon carbide carrier substrate to the compound semiconductor; (iii) removing the native silicon carbide substrate; (iv) forming a nucleation layer over the compound semiconductor; (v) growing polycrystalline chemical vapour deposited (CVD) diamond on the nucleation layer to form a composite diamond-compound semiconductor-silicon carbide wafer, and (vi) removing the silicon carbide carrier substrate y laser lift-off to achieve a layered structure comprising the compound semiconductor bonded to the polycrystalline CVD diamond via the nucleation layer, wherein in step (ii) the silicon carbide carrier substrate is bonded to the compound semiconductor via a laser absorption material which absorbs laser light, wherein the laser has a coherence length shorter than a thickness of the silicon carbide carrier substrate.
-
-