公开(公告)号：US20060261358A1

公开(公告)日：2006-11-23

申请号：US11414362

申请日：2006-05-01

申请人： Seok Hwang ,  Je Kim ,  Young Park ,  Min Kim ,  Hyo-Kyoung Cho ,  Kun Ko ,  Bok Min

发明人： Seok Hwang ,  Je Kim ,  Young Park ,  Min Kim ,  Hyo-Kyoung Cho ,  Kun Ko ,  Bok Min

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/16 ,  H01L2933/0016

摘要： The present invention relates to a flip chip light emitting diode in which an n-type electrode is formed on an insulating layer so that a large light emitting area can be secured to thereby enhance a current-spreading effect and in which the n-type electrode serves as a light reflecting layer so that light is prevented from being transmitted into the rear surface to thereby enhance light emission efficiency. The flip chip light emitting diode includes an optically-transparent substrate; a light emitting substrate that is formed by sequentially laminating an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer on the substrate and that includes mesas which are formed by etching the active layer and the p-type nitride semiconductor layer into a predetermined width so that a plurality of regions of the n-type nitride semiconductor layer are exposed; a plurality of p-type electrodes that are formed on the p-type nitride semiconductor layer of the light emitting structure; an insulating layer that is formed on the surface of the light emitting structure from a portion of the plurality of p-type electrodes to a portion of the n-type nitride semiconductor layer of the mesa; and an n-type electrode that is formed across the insulating layer and the mesa and comes in contact with the exposed n-type nitride semiconductor layer of the mesa.

摘要翻译： 本发明涉及一种倒装芯片发光二极管，其中在绝缘层上形成n型电极，从而可以确保大的发光区域，从而提高电流扩散效应，其中n型电极 作为光反射层，防止光被透射到后表面，从而提高发光效率。 倒装芯片发光二极管包括光学透明基板; 通过在衬底上顺序地层叠n型氮化物半导体层，有源层，p型氮化物半导体层，并且包括通过蚀刻有源层和p型氮化物形成的台面而形成的发光衬底 半导体层形成预定宽度，以使n型氮化物半导体层的多个区域露出; 多个p型电极，形成在发光结构的p型氮化物半导体层上; 在所述发光结构的表面上形成从所述多个p型电极的一部分到所述台面的n型氮化物半导体层的一部分的绝缘层， 以及形成在绝缘层和台面两侧并与台面的暴露的n型氮化物半导体层接触的n型电极。

公开(公告)号：US20070012939A1

公开(公告)日：2007-01-18

申请号：US11412984

申请日：2006-04-28

申请人： Seok Hwang ,  Je Kim ,  Young Park ,  Kun Ko ,  Jee Kim ,  Jung Park ,  Bok Min

发明人： Seok Hwang ,  Je Kim ,  Young Park ,  Kun Ko ,  Jee Kim ,  Jung Park ,  Bok Min

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same. The method of manufacturing a flip chip light emitting diode includes sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on an optically-transparent substrate; etching predetermined regions of the active layer and p-type nitride semiconductor layer and exposing a plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of mesas; etching predetermined regions of the active layer and p-type nitride semiconductor layer positioned between the formed mesas and exposing the plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of grooves; forming an insulating layer on the surface of the groove; forming a p-type electrode across the insulating layer formed on the upper portion of the p-type nitride semiconductor layer and the surface of the groove; and forming an n-type electrode on the formed mesa.

摘要翻译： 倒装芯片发光二极管技术领域本发明涉及一种倒装芯片发光二极管，其中集中在与n型电极相邻的部分上的电流可以被感应到发光部分的中心，从而相应地提高了电流扩展效果， 从而提高发光二极管芯片的发光效率及其制造方法。 制造倒装芯片发光二极管的方法包括在光学透明基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层; 蚀刻有源层和p型氮化物半导体层的预定区域，并露出n型氮化物半导体层的多个区域以形成多个台面; 蚀刻位于形成的台面之间的有源层和p型氮化物半导体层的预定区域，并暴露出n型氮化物半导体层的多个区域以形成多个沟槽; 在所述槽的表面上形成绝缘层; 在形成在p型氮化物半导体层的上部和沟槽的表面上的绝缘层上形成p型电极; 并在形成的台面上形成n型电极。

公开(公告)号：US20070007584A1

公开(公告)日：2007-01-11

申请号：US11480901

申请日：2006-07-06

申请人： Seok Hwang ,  Je Kim ,  Kun Ko ,  Bok Min

发明人： Seok Hwang ,  Je Kim ,  Kun Ko ,  Bok Min

IPC分类号： H01L29/792

CPC分类号： H01L33/42 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38

摘要： The present invention relates to a GaN-based semiconductor light emitting diode and a method of manufacturing the same. The GaN-based semiconductor light emitting diode includes: a substrate; a n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type nitride semiconductor layer; an insulating layer formed on an upper center portion of the transparent conductive layer, the insulating layer having a contact hole defining a p-type contact region; a p-electrode formed on the insulating layer and electrically connected to the transparent conductive layer through the contact hole; and an n-electrode formed on the n-type nitride semiconductor layer where no active layer is formed.

摘要翻译： 本发明涉及GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括：基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定部分上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明导电层; 绝缘层，形成在所述透明导电层的上中心部分上，所述绝缘层具有限定p型接触区域的接触孔; p电极，形成在所述绝缘层上，并通过所述接触孔与所述透明导电层电连接; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。

公开(公告)号：US20070102715A1

公开(公告)日：2007-05-10

申请号：US11588330

申请日：2006-10-27

申请人： Kun Ko ,  Young Park ,  Bok Min ,  Hyung Park ,  Seok Hwang

发明人： Kun Ko ,  Young Park ,  Bok Min ,  Hyung Park ,  Seok Hwang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/14 ,  H01L33/32

摘要： The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.

摘要翻译： 本发明涉及抑制电流浓度的高质量半导体发光器件。 半导体发光器件包括依次形成在衬底上的n型半导体层，有源层和p型半导体层。 半导体发光器件还包括形成在p型半导体层上的p电极和形成在n型半导体层的台面蚀刻部分的表面上的n电极。 在n型半导体层中形成沟槽以防止电流集中。 沟槽从n型半导体层的台面蚀刻部分的上表面或从基板的底表面延伸到预定深度的n型半导体层。

公开(公告)号：US20070069222A1

公开(公告)日：2007-03-29

申请号：US11524198

申请日：2006-09-21

申请人： Kun Ko ,  Bang Oh ,  Bok Min ,  Hyung Park ,  Seok Hwang

发明人： Kun Ko ,  Bang Oh ,  Bok Min ,  Hyung Park ,  Seok Hwang

IPC分类号： H01L33/00

CPC分类号： H01L33/642 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/46 ,  H01L33/641

摘要： A GaN based LED and a method of manufacturing the same are provided. The GaN based semiconductor LED can have an improved heat dissipation capability of a sapphire substrate, thereby preventing device characteristic from being degraded by heat and improving the luminous efficiency of the device. In the GaN based LED, a sapphire substrate has at least one groove formed in a lower portion thereof. A thermally conductive layer having higher thermal conductivity than the sapphire substrate is formed on a bottom surface of the sapphire substrate to fill the groove. An n-type nitride semiconductor layer is formed on the sapphire substrate, and an active layer and a p-type nitride semiconductor layer are sequentially formed on a predetermined portion of the n-type nitride semiconductor layer. A p-electrode and an n-electrode are formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

摘要翻译： 提供了一种GaN基LED及其制造方法。 GaN基半导体LED可以具有改善蓝宝石衬底的散热能力，从而防止器件特性被热降解并提高器件的发光效率。 在GaN基LED中，蓝宝石衬底在其下部形成有至少一个沟槽。 在蓝宝石衬底的底表面上形成具有比蓝宝石衬底高的热导率的导热层以填充凹槽。 在蓝宝石衬底上形成n型氮化物半导体层，并且在n型氮化物半导体层的预定部分上依次形成有源层和p型氮化物半导体层。 分别在p型氮化物半导体层和n型氮化物半导体层上形成p电极和n电极。

公开(公告)号：US20070034855A1

公开(公告)日：2007-02-15

申请号：US11499727

申请日：2006-08-07

申请人： Seok Hwang ,  Hyun Kim ,  Kun Ko ,  Sang Hong ,  Kyu Lee ,  Bok Min

发明人： Seok Hwang ,  Hyun Kim ,  Kun Ko ,  Sang Hong ,  Kyu Lee ,  Bok Min

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

公开(公告)号：US20060234407A1

公开(公告)日：2006-10-19

申请号：US11311169

申请日：2005-12-20

申请人： Dong Kim ,  Yong Kim ,  Bok Min

发明人： Dong Kim ,  Yong Kim ,  Bok Min

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/20

摘要： A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light emitting structure. The patterns of the metal layer each have a shape corresponding to a cross-sectional shape of a wanted final light emitting device and are spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed. The light emitting structure is divided into a plurality of individualized light emitting structures by removing the light emitting structure below the exposed region between the patterns of the metal layer. The sapphire substrate is separated from the light emitting structure by irradiating a laser beam.

摘要翻译： 一种制造垂直结构的氮化物半导体发光器件的方法，所述垂直结构氮化物半导体发光器件具有五边或多边的多边形的横截面形状。 在蓝宝石衬底上形成发光结构。 在发光结构上形成具有多个图案的金属层。 金属层的图案各自具有与期望的最终发光器件的横截面形状相对应的形状，并且间隔开预定距离，使得发光结构的上表面部分地露出。 通过在金属层的图案之间的暴露区域下方去除发光结构，将发光结构分为多个单独的发光结构。 通过照射激光束将蓝宝石衬底与发光结构分离。

公开(公告)号：US20070155032A1

公开(公告)日：2007-07-05

申请号：US11714192

申请日：2007-03-06

申请人： Dong Woo Kim ,  Yong Chun Kim ,  Bok Min

发明人： Dong Woo Kim ,  Yong Chun Kim ,  Bok Min

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/20

摘要： A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light emitting structure. The patterns of the metal layer each have a shape corresponding to a cross-sectional shape of a wanted final light emitting device and are spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed. The light emitting structure is divided into a plurality of individualized light emitting structures by removing the light emitting structure below the exposed region between the patterns of the metal layer. The sapphire substrate is separated from the light emitting structure by irradiating a laser beam.

摘要翻译： 一种制造垂直结构的氮化物半导体发光器件的方法，所述垂直结构氮化物半导体发光器件具有五边或多边的多边形的横截面形状。 在蓝宝石衬底上形成发光结构。 在发光结构上形成具有多个图案的金属层。 金属层的图案各自具有与期望的最终发光器件的横截面形状相对应的形状，并且间隔开预定距离，使得发光结构的上表面部分地露出。 通过在金属层的图案之间的暴露区域下方去除发光结构，将发光结构分为多个单独的发光结构。 通过照射激光束将蓝宝石衬底与发光结构分离。