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    Semiconductor light emitting device
    1.
    发明申请
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US20070102715A1

    公开(公告)日：2007-05-10

    申请号：US11588330

    申请日：2006-10-27

    申请人： Kun Ko ,  Young Park ,  Bok Min ,  Hyung Park ,  Seok Hwang

    发明人： Kun Ko ,  Young Park ,  Bok Min ,  Hyung Park ,  Seok Hwang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/14 ,  H01L33/32

    摘要： The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.

    摘要翻译： 本发明涉及抑制电流浓度的高质量半导体发光器件。 半导体发光器件包括依次形成在衬底上的n型半导体层，有源层和p型半导体层。 半导体发光器件还包括形成在p型半导体层上的p电极和形成在n型半导体层的台面蚀刻部分的表面上的n电极。 在n型半导体层中形成沟槽以防止电流集中。 沟槽从n型半导体层的台面蚀刻部分的上表面或从基板的底表面延伸到预定深度的n型半导体层。

    Flip chip light emitting diode and method of manufacturing the same
    2.
    发明申请
    Flip chip light emitting diode and method of manufacturing the same 审中-公开
    倒装芯片发光二极管及其制造方法

    公开(公告)号：US20060261358A1

    公开(公告)日：2006-11-23

    申请号：US11414362

    申请日：2006-05-01

    申请人： Seok Hwang ,  Je Kim ,  Young Park ,  Min Kim ,  Hyo-Kyoung Cho ,  Kun Ko ,  Bok Min

    发明人： Seok Hwang ,  Je Kim ,  Young Park ,  Min Kim ,  Hyo-Kyoung Cho ,  Kun Ko ,  Bok Min

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/16 ,  H01L2933/0016

    摘要： The present invention relates to a flip chip light emitting diode in which an n-type electrode is formed on an insulating layer so that a large light emitting area can be secured to thereby enhance a current-spreading effect and in which the n-type electrode serves as a light reflecting layer so that light is prevented from being transmitted into the rear surface to thereby enhance light emission efficiency. The flip chip light emitting diode includes an optically-transparent substrate; a light emitting substrate that is formed by sequentially laminating an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer on the substrate and that includes mesas which are formed by etching the active layer and the p-type nitride semiconductor layer into a predetermined width so that a plurality of regions of the n-type nitride semiconductor layer are exposed; a plurality of p-type electrodes that are formed on the p-type nitride semiconductor layer of the light emitting structure; an insulating layer that is formed on the surface of the light emitting structure from a portion of the plurality of p-type electrodes to a portion of the n-type nitride semiconductor layer of the mesa; and an n-type electrode that is formed across the insulating layer and the mesa and comes in contact with the exposed n-type nitride semiconductor layer of the mesa.

    摘要翻译： 本发明涉及一种倒装芯片发光二极管，其中在绝缘层上形成n型电极，从而可以确保大的发光区域，从而提高电流扩散效应，其中n型电极 作为光反射层，防止光被透射到后表面，从而提高发光效率。 倒装芯片发光二极管包括光学透明基板; 通过在衬底上顺序地层叠n型氮化物半导体层，有源层，p型氮化物半导体层，并且包括通过蚀刻有源层和p型氮化物形成的台面而形成的发光衬底 半导体层形成预定宽度，以使n型氮化物半导体层的多个区域露出; 多个p型电极，形成在发光结构的p型氮化物半导体层上; 在所述发光结构的表面上形成从所述多个p型电极的一部分到所述台面的n型氮化物半导体层的一部分的绝缘层， 以及形成在绝缘层和台面两侧并与台面的暴露的n型氮化物半导体层接触的n型电极。

    Flip chip light emitting diode and method of manufacturing the same
    3.
    发明申请
    Flip chip light emitting diode and method of manufacturing the same 审中-公开
    倒装芯片发光二极管及其制造方法

    公开(公告)号：US20070012939A1

    公开(公告)日：2007-01-18

    申请号：US11412984

    申请日：2006-04-28

    申请人： Seok Hwang ,  Je Kim ,  Young Park ,  Kun Ko ,  Jee Kim ,  Jung Park ,  Bok Min

    发明人： Seok Hwang ,  Je Kim ,  Young Park ,  Kun Ko ,  Jee Kim ,  Jung Park ,  Bok Min

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

    摘要： The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same. The method of manufacturing a flip chip light emitting diode includes sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on an optically-transparent substrate; etching predetermined regions of the active layer and p-type nitride semiconductor layer and exposing a plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of mesas; etching predetermined regions of the active layer and p-type nitride semiconductor layer positioned between the formed mesas and exposing the plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of grooves; forming an insulating layer on the surface of the groove; forming a p-type electrode across the insulating layer formed on the upper portion of the p-type nitride semiconductor layer and the surface of the groove; and forming an n-type electrode on the formed mesa.

    摘要翻译： 倒装芯片发光二极管技术领域本发明涉及一种倒装芯片发光二极管，其中集中在与n型电极相邻的部分上的电流可以被感应到发光部分的中心，从而相应地提高了电流扩展效果， 从而提高发光二极管芯片的发光效率及其制造方法。 制造倒装芯片发光二极管的方法包括在光学透明基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层; 蚀刻有源层和p型氮化物半导体层的预定区域，并露出n型氮化物半导体层的多个区域以形成多个台面; 蚀刻位于形成的台面之间的有源层和p型氮化物半导体层的预定区域，并暴露出n型氮化物半导体层的多个区域以形成多个沟槽; 在所述槽的表面上形成绝缘层; 在形成在p型氮化物半导体层的上部和沟槽的表面上的绝缘层上形成p型电极; 并在形成的台面上形成n型电极。

    Vertical nitride semiconductor light emitting diode
    4.
    发明申请
    Vertical nitride semiconductor light emitting diode 审中-公开
    垂直氮化物半导体发光二极管

    公开(公告)号：US20060043384A1

    公开(公告)日：2006-03-02

    申请号：US10995898

    申请日：2004-11-24

    申请人： Hyo Cho ,  Min Kim ,  Kun Ko ,  Young Park

    发明人： Hyo Cho ,  Min Kim ,  Kun Ko ,  Young Park

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/405 ,  H01L33/641

    摘要： The present invention relates to a vertical nitride semiconductor light emitting diode. The present invention provides a vertical nitride semiconductor light emitting diode comprising a first conductive nitride semiconductor layer including an upper surface having a first electrode formed thereon; an active layer formed on a lower surface of the first conductive nitride semiconductor layer; a second conductive nitride semiconductor layer formed on a lower surface of the active layer; a highly reflective ohmic contact layer formed on the lower surface of the second conductive nitride semiconductor layer; and a metal substrate formed on the lower surface of the highly reflective ohmic contact layer. In accordance with the present invention, provided are effects such as good heat release, reduction of forward voltage, and improvement of electrostatic discharge effects. In addition, a broad light emitting area can be secured, thereby improving LED luminance.

    摘要翻译： 本发明涉及垂直氮化物半导体发光二极管。 本发明提供了一种垂直氮化物半导体发光二极管，包括：第一导电氮化物半导体层，包括其上形成有第一电极的上表面; 形成在所述第一导电氮化物半导体层的下表面上的有源层; 形成在所述有源层的下表面上的第二导电氮化物半导体层; 形成在第二导电氮化物半导体层的下表面上的高反射欧姆接触层; 以及形成在高反射欧姆接触层的下表面上的金属基板。 根据本发明，提供了诸如良好的散热，降低正向电压和改善静电放电效果的效果。 此外，可以确保宽的发光面积，从而提高LED的亮度。

    Method of Depositing Thin Film
    8.
    发明申请
    Method of Depositing Thin Film 失效
    沉积薄膜的方法

    公开(公告)号：US20080044567A1

    公开(公告)日：2008-02-21

    申请号：US11571547

    申请日：2005-12-14

    申请人： Tae Seo ,  Young Park ,  Ki Lee ,  Sahng Lee

    发明人： Tae Seo ,  Young Park ,  Ki Lee ,  Sahng Lee

    IPC分类号： C23C16/00

    CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76861

    摘要： Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited. If it is possible to continuously deposit Ti/TiN thin films on 1-6 substrates in one chamber, it is possible to set only one chamber among 4 chambers in a PM period, thereby an operating ratio of a cluster tool can be significantly improved. When Ti/TiN is continuously deposited in one chamber, the time needed to move a substrate from a Ti chamber to a TiN chamber is reduced, thus treatment efficiency of the substrate per unit time is significantly increased.

    摘要翻译： 公开了一种沉积薄膜的方法，其中薄膜连续地沉积到一个室中，并且将1-6个晶片装入室中。 在该方法中，能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。 该方法包括：（a）将至少一个衬底装载到腔室中，（b）将Ti薄膜沉积到衬底上，进行调整，使得保持第一工艺间隙;（c）移动晶片块使得第一工艺间隙 改变为第二工艺间隙，以便控制沉积Ti薄膜的衬底的工艺间隙，（d）将TiN薄膜沉积到衬底上，移动以设定第二工艺间隙，（e） 卸载沉积有Ti / TiN薄膜的基板。 如果可以在一个室中的1-6个基板上连续沉积Ti / TiN薄膜，则可以在PM周期内在4个室中仅设置一个室，从而可以显着提高簇工具的运行比。 当在一个室中连续沉积Ti / TiN时，将衬底从Ti室移动到TiN室所需的时间减少，因此每单位时间衬底的处理效率显着提高。

    Handler for testing semiconductor devices
    9.
    发明申请
    Handler for testing semiconductor devices 失效

    公开(公告)号：US20070152655A1

    公开(公告)日：2007-07-05

    申请号：US11713683

    申请日：2007-03-05

    申请人： Chul Ham ,  Ho Song ,  Young Park ,  Woo Lim ,  Jae Seo

    发明人： Chul Ham ,  Ho Song ,  Young Park ,  Woo Lim ,  Jae Seo

    IPC分类号： G01R31/28

    CPC分类号： G01R31/2893 ,  G01R31/2867

    摘要： A handler for testing semiconductor devices is disclosed which is capable of simplifying the process carried out in an exchanging station, namely, the process of loading/unloading semiconductor devices in/from test trays, and greatly increasing the number of simultaneously testable semiconductor devices. The handler includes a loading station, an unloading station, test trays, an exchanging station comprising a horizontal moving unit for horizontally moving a selected one of the test trays by a predetermined pitch at a working place, a test station in which at least one test board having a plurality of test sockets to be electrically connected with semiconductor devices is mounted, the test station performing a test while connecting the semiconductor devices in one of the test trays, which is fed from the exchanging station to the test station, to the test sockets, device transfer units for transfer the semiconductor devices between the loading station and the exchanging station and between the exchanging station and the unloading station, respectively, and a tray transfer unit for transfer the test trays between the exchanging station and the test station.

    Phase change memory device having semiconductor laser unit
    10.
    发明申请
    Phase change memory device having semiconductor laser unit 有权
    具有半导体激光器单元的相变存储器件

    公开(公告)号：US20070133272A1

    公开(公告)日：2007-06-14

    申请号：US11635279

    申请日：2006-12-07

    申请人： Byoung Yu ,  Seung Lee ,  Sangouk Ryu ,  Sung Yoon ,  Young Park ,  Kyu Choi ,  Nam Lee

    发明人： Byoung Yu ,  Seung Lee ,  Sangouk Ryu ,  Sung Yoon ,  Young Park ,  Kyu Choi ,  Nam Lee

    IPC分类号： G11C11/00

    CPC分类号： H01L45/1213 ,  G11C13/0004 ,  G11C13/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/1666

    摘要： Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.

    摘要翻译： 提供了一种相变存储器件，包括：相变存储器单元，包括相变层图案; 激光束聚焦单元将激光束局部聚焦在相变存储单元的相变层图案上; 以及向激光束聚焦单元产生并发射激光束的半导体激光器单元。 因此，相变存储器件中的设定或复位操作使用局部施加的激光束，从而在单位电池的操作期间降低消耗功率并防止存储在相邻单元中的信息的破坏或改变。