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1.发明申请Gallium nitride based semiconductor light emitting diode and method of manufacturing the same 审中-公开氮化镓基半导体发光二极管及其制造方法公开(公告)号：US20070069222A1
公开(公告)日：2007-03-29
申请号：US11524198
申请日：2006-09-21
申请人： Kun Ko , Bang Oh , Bok Min , Hyung Park , Seok Hwang
发明人： Kun Ko , Bang Oh , Bok Min , Hyung Park , Seok Hwang
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/46 , H01L33/641
摘要： A GaN based LED and a method of manufacturing the same are provided. The GaN based semiconductor LED can have an improved heat dissipation capability of a sapphire substrate, thereby preventing device characteristic from being degraded by heat and improving the luminous efficiency of the device. In the GaN based LED, a sapphire substrate has at least one groove formed in a lower portion thereof. A thermally conductive layer having higher thermal conductivity than the sapphire substrate is formed on a bottom surface of the sapphire substrate to fill the groove. An n-type nitride semiconductor layer is formed on the sapphire substrate, and an active layer and a p-type nitride semiconductor layer are sequentially formed on a predetermined portion of the n-type nitride semiconductor layer. A p-electrode and an n-electrode are formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.
摘要翻译： 提供了一种GaN基LED及其制造方法。 GaN基半导体LED可以具有改善蓝宝石衬底的散热能力，从而防止器件特性被热降解并提高器件的发光效率。 在GaN基LED中，蓝宝石衬底在其下部形成有至少一个沟槽。 在蓝宝石衬底的底表面上形成具有比蓝宝石衬底高的热导率的导热层以填充凹槽。 在蓝宝石衬底上形成n型氮化物半导体层，并且在n型氮化物半导体层的预定部分上依次形成有源层和p型氮化物半导体层。 分别在p型氮化物半导体层和n型氮化物半导体层上形成p电极和n电极。
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公开(公告)号：US20070284593A1
公开(公告)日：2007-12-13
申请号：US11798677
申请日：2007-05-16
申请人： Kun Ko , Bang Oh , Seok Hwang , Je Kim , Hyung Park , Dong Kim
发明人： Kun Ko , Bang Oh , Seok Hwang , Je Kim , Hyung Park , Dong Kim
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer, the p-electrode having a p-type branch electrode; a p-type ESD pad formed at the end of the p-type branch electrode, the p-type ESD pad having a larger width than the end of the p-type branch electrode; an n-electrode formed on the n-type nitride semiconductor layer, on which the active layer is not formed, the n-electrode having an n-type branch electrode; and an n-type ESD pad formed at the end of the n-type branch electrode, the n-type ESD pad having a larger width than the end of the n-type branch electrode.
摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p电极，p电极具有p型分支电极; 形成在p型分支电极的端部的p型ESD焊盘，p型ESD焊盘的宽度大于p型分支电极的端部; 形成在其上没有形成有源层的n型氮化物半导体层上的n电极，具有n型分支电极的n电极; 以及形成在n型分支电极的端部的n型ESD焊盘，该n型ESD焊盘的宽度大于n型分支电极的端部。
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3.发明申请公开(公告)号：US20050218416A1
公开(公告)日：2005-10-06
申请号：US10898204
申请日：2004-07-26
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647
摘要： Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.
摘要翻译： 提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。
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公开(公告)号：US20050079687A1
公开(公告)日：2005-04-14
申请号：US10806433
申请日：2004-03-23
申请人： Jeong Yoon , Bang Oh , Kuk Yi
发明人： Jeong Yoon , Bang Oh , Kuk Yi
CPC分类号： H01L33/0095
摘要： Disclosed is a method for efficiently separating a sapphire wafer serving as a substrate, on which semiconductor elements are formed, into unit chips by scribing the sapphire wafer, after grinding and lapping a rear surface of the sapphire wafer and then sand-blasting the sapphire wafer. The method includes the steps of: (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) polishing the rear surface of the lapped sapphire wafer so that the sapphire wafer has a designated thickness; (d) sand-blasting the rear surface of the polished sapphire wafer by uniformly blasting particles at a designated pressure during a designated time onto the rear surface of the polished sapphire wafer; and (e) scribing the rear surface of the sand-blast ground sapphire wafer.
摘要翻译： 公开了通过在研磨和研磨蓝宝石晶片的后表面之后，通过划线蓝宝石晶片将用作基板的蓝宝石晶片（其上形成有半导体元件）分离成单元芯片的方法，然后对蓝宝石晶片进行喷砂处理 。 该方法包括以下步骤：（a）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （b）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （c）抛光研磨的蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （d）通过在指定时间内将指定压力的颗粒均匀地喷射到抛光的蓝宝石晶片的后表面上来对抛光的蓝宝石晶片的后表面进行喷砂; 和（e）划线沙尘蓝宝石晶片的后表面。
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公开(公告)号：US20070134826A1
公开(公告)日：2007-06-14
申请号：US11584591
申请日：2006-10-23
IPC分类号： H01L21/00
CPC分类号： H01L33/0079
摘要： According to a method of manufacturing a vertical nitride light emitting device, a first conductivity type nitride layer, an active layer and a second conductivity type nitride layer are sequentially grown on a preliminary growth substrate to form a light emission structure. The light emission structure is cut according to a final size of light emitting devices, leaving a predetermined thickness of the first conductivity type nitride layer intact. A permanent conductive substrate is provided on the light emission structure and the preliminary substrate is diced into a plurality of units. Laser beam is irradiated to detach the preliminary substrate, thereby separating the light emission structure according to the size of the light emitting devices. First and second contacts are formed on the first conductivity type nitride layer and the permanent conductive substrate, respectively. The permanent conductive substrate is diced to complete individual light emitting devices.
摘要翻译： 根据制造垂直氮化物发光器件的方法，在预备生长衬底上依次生长第一导电型氮化物层，有源层和第二导电型氮化物层，以形成发光结构。 根据发光器件的最终尺寸切割发光结构，留下第一导电型氮化物层的预定厚度。 在发光结构上设置永久导电基板，将预备基板切割成多个单元。 照射激光束以分离初始衬底，从而根据发光器件的尺寸分离发光结构。 第一和第二触点分别形成在第一导电型氮化物层和永久导电基板上。 切割永久导电基板以完成各个发光器件。
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公开(公告)号：US20070194324A1
公开(公告)日：2007-08-23
申请号：US11602286
申请日：2006-11-21
申请人： Dong Kim , Bang Oh , Jeong Oh , Hyung Back , Min Kim
发明人： Dong Kim , Bang Oh , Jeong Oh , Hyung Back , Min Kim
摘要： A vertical GaN-based LED is provided. The vertical GaN-based LED includes: an n-electrode; an n-type GaN layer formed under the n-electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer, the p-type GaN layer having a first uneven structure formed on a surface that does not contact the active layer; a p-type reflective electrode formed under the p-type GaN layer having the first uneven structure; and a support layer formed under the p-type reflective electrode.
摘要翻译： 提供垂直的GaN基LED。 垂直GaN基LED包括：n电极; 形成在n电极下面的n型GaN层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层，所述p型GaN层具有形成在不接触有源层的表面上的第一不平坦结构; 形成在具有第一凹凸结构的p型GaN层下面的p型反射电极; 以及形成在p型反射电极下的支撑层。
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7.发明申请公开(公告)号：US20070126022A1
公开(公告)日：2007-06-07
申请号：US11634112
申请日：2006-12-06
IPC分类号： H01L33/00
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。
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公开(公告)号：US20070085097A1
公开(公告)日：2007-04-19
申请号：US11581335
申请日：2006-10-17
IPC分类号： H01L33/00
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译： 本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。 在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。 至少一个量子势垒层具有带隙调制多层结构。
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9.发明申请Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 审中-公开氮化物半导体LED的照明效率提高和制造方法公开(公告)号：US20060208264A1
公开(公告)日：2006-09-21
申请号：US11439127
申请日：2006-05-24
IPC分类号： H01L33/00 , H01L27/15 , H01L29/167 , H01L31/12
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译： 提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。 在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。 在有源层上形成p掺杂半导体层。 在p掺杂半导体层上形成p +掺杂的半导体层。 通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。 此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。 本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。
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10.发明申请Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 失效氮化物半导体LED的照明效率提高和制造方法公开(公告)号：US20050208686A1
公开(公告)日：2005-09-22
申请号：US10875321
申请日：2004-06-25
IPC分类号： H01L21/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译： 提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。 在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。 在有源层上形成p掺杂半导体层。 在p掺杂半导体层上形成p +掺杂的半导体层。 通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。 此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。 本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。
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