公开(公告)号：US20070102715A1

公开(公告)日：2007-05-10

申请号：US11588330

申请日：2006-10-27

申请人： Kun Ko ,  Young Park ,  Bok Min ,  Hyung Park ,  Seok Hwang

发明人： Kun Ko ,  Young Park ,  Bok Min ,  Hyung Park ,  Seok Hwang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/14 ,  H01L33/32

摘要： The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.

摘要翻译： 本发明涉及抑制电流浓度的高质量半导体发光器件。 半导体发光器件包括依次形成在衬底上的n型半导体层，有源层和p型半导体层。 半导体发光器件还包括形成在p型半导体层上的p电极和形成在n型半导体层的台面蚀刻部分的表面上的n电极。 在n型半导体层中形成沟槽以防止电流集中。 沟槽从n型半导体层的台面蚀刻部分的上表面或从基板的底表面延伸到预定深度的n型半导体层。

公开(公告)号：US20070069222A1

公开(公告)日：2007-03-29

申请号：US11524198

申请日：2006-09-21

申请人： Kun Ko ,  Bang Oh ,  Bok Min ,  Hyung Park ,  Seok Hwang

发明人： Kun Ko ,  Bang Oh ,  Bok Min ,  Hyung Park ,  Seok Hwang

IPC分类号： H01L33/00

CPC分类号： H01L33/642 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/46 ,  H01L33/641

摘要： A GaN based LED and a method of manufacturing the same are provided. The GaN based semiconductor LED can have an improved heat dissipation capability of a sapphire substrate, thereby preventing device characteristic from being degraded by heat and improving the luminous efficiency of the device. In the GaN based LED, a sapphire substrate has at least one groove formed in a lower portion thereof. A thermally conductive layer having higher thermal conductivity than the sapphire substrate is formed on a bottom surface of the sapphire substrate to fill the groove. An n-type nitride semiconductor layer is formed on the sapphire substrate, and an active layer and a p-type nitride semiconductor layer are sequentially formed on a predetermined portion of the n-type nitride semiconductor layer. A p-electrode and an n-electrode are formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

摘要翻译： 提供了一种GaN基LED及其制造方法。 GaN基半导体LED可以具有改善蓝宝石衬底的散热能力，从而防止器件特性被热降解并提高器件的发光效率。 在GaN基LED中，蓝宝石衬底在其下部形成有至少一个沟槽。 在蓝宝石衬底的底表面上形成具有比蓝宝石衬底高的热导率的导热层以填充凹槽。 在蓝宝石衬底上形成n型氮化物半导体层，并且在n型氮化物半导体层的预定部分上依次形成有源层和p型氮化物半导体层。 分别在p型氮化物半导体层和n型氮化物半导体层上形成p电极和n电极。

公开(公告)号：US20060261358A1

公开(公告)日：2006-11-23

申请号：US11414362

申请日：2006-05-01

申请人： Seok Hwang ,  Je Kim ,  Young Park ,  Min Kim ,  Hyo-Kyoung Cho ,  Kun Ko ,  Bok Min

发明人： Seok Hwang ,  Je Kim ,  Young Park ,  Min Kim ,  Hyo-Kyoung Cho ,  Kun Ko ,  Bok Min

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/16 ,  H01L2933/0016

摘要： The present invention relates to a flip chip light emitting diode in which an n-type electrode is formed on an insulating layer so that a large light emitting area can be secured to thereby enhance a current-spreading effect and in which the n-type electrode serves as a light reflecting layer so that light is prevented from being transmitted into the rear surface to thereby enhance light emission efficiency. The flip chip light emitting diode includes an optically-transparent substrate; a light emitting substrate that is formed by sequentially laminating an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer on the substrate and that includes mesas which are formed by etching the active layer and the p-type nitride semiconductor layer into a predetermined width so that a plurality of regions of the n-type nitride semiconductor layer are exposed; a plurality of p-type electrodes that are formed on the p-type nitride semiconductor layer of the light emitting structure; an insulating layer that is formed on the surface of the light emitting structure from a portion of the plurality of p-type electrodes to a portion of the n-type nitride semiconductor layer of the mesa; and an n-type electrode that is formed across the insulating layer and the mesa and comes in contact with the exposed n-type nitride semiconductor layer of the mesa.

摘要翻译： 本发明涉及一种倒装芯片发光二极管，其中在绝缘层上形成n型电极，从而可以确保大的发光区域，从而提高电流扩散效应，其中n型电极 作为光反射层，防止光被透射到后表面，从而提高发光效率。 倒装芯片发光二极管包括光学透明基板; 通过在衬底上顺序地层叠n型氮化物半导体层，有源层，p型氮化物半导体层，并且包括通过蚀刻有源层和p型氮化物形成的台面而形成的发光衬底 半导体层形成预定宽度，以使n型氮化物半导体层的多个区域露出; 多个p型电极，形成在发光结构的p型氮化物半导体层上; 在所述发光结构的表面上形成从所述多个p型电极的一部分到所述台面的n型氮化物半导体层的一部分的绝缘层， 以及形成在绝缘层和台面两侧并与台面的暴露的n型氮化物半导体层接触的n型电极。

公开(公告)号：US20070012939A1

公开(公告)日：2007-01-18

申请号：US11412984

申请日：2006-04-28

申请人： Seok Hwang ,  Je Kim ,  Young Park ,  Kun Ko ,  Jee Kim ,  Jung Park ,  Bok Min

发明人： Seok Hwang ,  Je Kim ,  Young Park ,  Kun Ko ,  Jee Kim ,  Jung Park ,  Bok Min

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same. The method of manufacturing a flip chip light emitting diode includes sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on an optically-transparent substrate; etching predetermined regions of the active layer and p-type nitride semiconductor layer and exposing a plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of mesas; etching predetermined regions of the active layer and p-type nitride semiconductor layer positioned between the formed mesas and exposing the plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of grooves; forming an insulating layer on the surface of the groove; forming a p-type electrode across the insulating layer formed on the upper portion of the p-type nitride semiconductor layer and the surface of the groove; and forming an n-type electrode on the formed mesa.

摘要翻译： 倒装芯片发光二极管技术领域本发明涉及一种倒装芯片发光二极管，其中集中在与n型电极相邻的部分上的电流可以被感应到发光部分的中心，从而相应地提高了电流扩展效果， 从而提高发光二极管芯片的发光效率及其制造方法。 制造倒装芯片发光二极管的方法包括在光学透明基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层; 蚀刻有源层和p型氮化物半导体层的预定区域，并露出n型氮化物半导体层的多个区域以形成多个台面; 蚀刻位于形成的台面之间的有源层和p型氮化物半导体层的预定区域，并暴露出n型氮化物半导体层的多个区域以形成多个沟槽; 在所述槽的表面上形成绝缘层; 在形成在p型氮化物半导体层的上部和沟槽的表面上的绝缘层上形成p型电极; 并在形成的台面上形成n型电极。

公开(公告)号：US20070034855A1

公开(公告)日：2007-02-15

申请号：US11499727

申请日：2006-08-07

申请人： Seok Hwang ,  Hyun Kim ,  Kun Ko ,  Sang Hong ,  Kyu Lee ,  Bok Min

发明人： Seok Hwang ,  Hyun Kim ,  Kun Ko ,  Sang Hong ,  Kyu Lee ,  Bok Min

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

公开(公告)号：US20070007584A1

公开(公告)日：2007-01-11

申请号：US11480901

申请日：2006-07-06

申请人： Seok Hwang ,  Je Kim ,  Kun Ko ,  Bok Min

发明人： Seok Hwang ,  Je Kim ,  Kun Ko ,  Bok Min

IPC分类号： H01L29/792

CPC分类号： H01L33/42 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38

摘要： The present invention relates to a GaN-based semiconductor light emitting diode and a method of manufacturing the same. The GaN-based semiconductor light emitting diode includes: a substrate; a n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type nitride semiconductor layer; an insulating layer formed on an upper center portion of the transparent conductive layer, the insulating layer having a contact hole defining a p-type contact region; a p-electrode formed on the insulating layer and electrically connected to the transparent conductive layer through the contact hole; and an n-electrode formed on the n-type nitride semiconductor layer where no active layer is formed.

摘要翻译： 本发明涉及GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括：基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定部分上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明导电层; 绝缘层，形成在所述透明导电层的上中心部分上，所述绝缘层具有限定p型接触区域的接触孔; p电极，形成在所述绝缘层上，并通过所述接触孔与所述透明导电层电连接; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。

公开(公告)号：US20070284593A1

公开(公告)日：2007-12-13

申请号：US11798677

申请日：2007-05-16

申请人： Kun Ko ,  Bang Oh ,  Seok Hwang ,  Je Kim ,  Hyung Park ,  Dong Kim

发明人： Kun Ko ,  Bang Oh ,  Seok Hwang ,  Je Kim ,  Hyung Park ,  Dong Kim

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

CPC分类号： H01L33/38 ,  H01L33/20

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer, the p-electrode having a p-type branch electrode; a p-type ESD pad formed at the end of the p-type branch electrode, the p-type ESD pad having a larger width than the end of the p-type branch electrode; an n-electrode formed on the n-type nitride semiconductor layer, on which the active layer is not formed, the n-electrode having an n-type branch electrode; and an n-type ESD pad formed at the end of the n-type branch electrode, the n-type ESD pad having a larger width than the end of the n-type branch electrode.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p电极，p电极具有p型分支电极; 形成在p型分支电极的端部的p型ESD焊盘，p型ESD焊盘的宽度大于p型分支电极的端部; 形成在其上没有形成有源层的n型氮化物半导体层上的n电极，具有n型分支电极的n电极; 以及形成在n型分支电极的端部的n型ESD焊盘，该n型ESD焊盘的宽度大于n型分支电极的端部。

公开(公告)号：US20070085095A1

公开(公告)日：2007-04-19

申请号：US11543231

申请日：2006-10-05

申请人： Kun Ko ,  Seok Hwang ,  Hyung Park

发明人： Kun Ko ,  Seok Hwang ,  Hyung Park

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/05552

摘要： A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. the n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

摘要翻译： 提供了一种基于氮化物的半导体LED。 在氮化物系半导体LED中，在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分成具有手指结构的第一区域和第二区域，使得第一区域和第二区域彼此啮合。 在n型氮化物半导体层的第二区域上形成有源层。 在有源层上形成p型氮化物半导体层，在p型氮化物半导体层上形成反射电极。 在反射电极上形成p电极，在n型氮化物半导体层的第一区域上形成n电极。 在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。

公开(公告)号：US20070015862A1

公开(公告)日：2007-01-18

申请号：US10569411

申请日：2004-03-31

申请人： Seung Hong ,  Min Park ,  Deok Kim ,  Seok Hwang

发明人： Seung Hong ,  Min Park ,  Deok Kim ,  Seok Hwang

IPC分类号： C08F290/04

CPC分类号： C08F110/08 ,  C08F10/00 ,  Y10S526/905 ,  C08F4/6565 ,  C08F4/651 ,  C08F2500/15 ,  C08F2500/03 ,  C08F2500/04 ,  C08F2500/12 ,  C08F2500/08

摘要： Disclosed is a process for the preparation of a high stereospecific (isotactic) polybutylene polymer comprising the step of polymerizing a reactive monomer, 1-butene, which is used or is not used as a solvent, in the presence of catalyst and inert gas. According to the present invention, it is possible to prepare a high stereospecific polybutylene polymer in much higher activity than that of any other known processes for the preparation of a high stereospecific polybutylene polymer. The high stereospecific polybutylene polymer according to the present invention is a homopolymer of 1-butene, or a copolymer containing a-olefin and up to 40% by weight of a comonomer, wherein titanium in the catalyst residues is not detected in the ppm level, stereospecificity (Isotactic Index, mmmm %) determined by 13C-NMR is 96 or more, molecular weight distribution (Mw/Mn) is 3-6, and molecular weight distribution (Mw/Mn) can be controlled to 8 or more.

摘要翻译： 公开了一种制备高立体定向（全同立构）聚丁烯聚合物的方法，包括在催化剂和惰性气体存在下使用或不用作溶剂的反应性单体1-丁烯聚合的步骤。 根据本发明，可以制备比用于制备高立体特异性聚丁烯聚合物的任何其它已知方法高的立体特异性聚丁烯聚合物活性高得多。 根据本发明的高立体特异性聚丁烯聚合物是1-丁烯的均聚物或含有α-烯烃的共聚物和至多40重量％的共聚单体的共聚单体，其中催化剂残余物中的钛在ppm水平上未检测到， 通过13 C-NMR测定的立体定向性（全同立构指数mmmm％）为96以上，分子量分布（Mw / Mn）为3-6，分子量分布（Mw / Mn）可以为 控制在8以上。

公开(公告)号：US20070015007A1

公开(公告)日：2007-01-18

申请号：US11487440

申请日：2006-07-17

申请人： Jung-Han Shin ,  Seok-Jong Lee ,  Chang-ho Lee ,  Seok Hwang ,  Seung-Gak Yang ,  Young-Kook Kim ,  Hee-Yeon Kim

发明人： Jung-Han Shin ,  Seok-Jong Lee ,  Chang-ho Lee ,  Seok Hwang ,  Seung-Gak Yang ,  Young-Kook Kim ,  Hee-Yeon Kim

IPC分类号： H01L51/54 ,  H05B33/12 ,  C07D251/24

CPC分类号： C09K11/06 ,  C07D251/24 ,  C09K2211/1007 ,  C09K2211/1014 ,  C09K2211/1029 ,  C09K2211/1059 ,  C09K2211/185 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5012 ,  H01L51/5048 ,  H05B33/14

摘要： A triazine-based compound having three biphenyl groups, represented by Structure 1, below, wherein R1 through R18 are each independently one of: hydrogen, a substituted C1-30 alkyl group, an unsubstituted C1-30 alkyl group, a substituted C6-50 aryl group, an unsubstituted C6-50 aryl group, a substituted C4-50 heteroaryl group, and an unsubstituted C4-50 heteroaryl group, and at least one of R1, R2, R7, R8, R13 and R14 is one of: a substituted C1-30 alkyl group, an unsubstituted C1-30 alkyl group, a substituted C6-50 aryl group, an unsubstituted C6-50 aryl group, a substituted C4-50 heteroaryl group, and an unsubstituted C4-50 heteroaryl group.

摘要翻译： 由以下结构1表示的具有三个联苯基的三嗪基化合物，其中R 1至R 18各自独立地为氢，取代的C _{1-30个烷基，未取代的C 1〜30个烷基，取代的C 6〜6-50芳基，未取代的C 6 -50个芳基，取代的C 4-50杂芳基和未取代的C 1-4-50杂芳基，以及至少一个R SUB R 1，R 2，R 7，R 8，R 13和R SUB > 14 是以下之一：取代的C 1-130烷基，未取代的C 1-130烷基，取代的C 6〜 50个芳基，未取代的C 6〜6-50芳基，取代的C 4-50杂芳基和未取代的C 4-50 杂芳基。}