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公开(公告)号:US20170297921A1
公开(公告)日:2017-10-19
申请号:US15099575
申请日:2016-04-14
摘要: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
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公开(公告)号:US10689775B2
公开(公告)日:2020-06-23
申请号:US16164795
申请日:2018-10-19
IPC分类号: C23C18/12 , C30B7/04 , C30B19/00 , C30B29/16 , C25D7/12 , H01L21/02 , C23C18/16 , C30B7/00 , C30B29/10
摘要: A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
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公开(公告)号:US10407315B2
公开(公告)日:2019-09-10
申请号:US15099580
申请日:2016-04-14
摘要: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
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公开(公告)号:US10106909B2
公开(公告)日:2018-10-23
申请号:US15606945
申请日:2017-05-26
IPC分类号: C30B7/04 , C30B7/00 , C30B29/10 , C30B19/00 , C30B29/16 , C25D7/12 , C23C18/16 , H01L21/02 , C23C18/12
摘要: A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
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公开(公告)号:US10727374B2
公开(公告)日:2020-07-28
申请号:US14846655
申请日:2015-09-04
IPC分类号: H01L33/42 , H01L51/00 , H01L31/18 , H01L31/054 , H01L21/67 , H01L31/0224 , H01L31/0304 , H01L33/38 , H01L51/52 , H01L33/00 , H01L33/32
摘要: Briefly, in accordance with one embodiment, a transparent conductive structure and method to form such a structure are described. For example, an apparatus may include an optoelectronic device. In such an embodiment, an optoelectronic device may include one or more zinc oxide crystals forming a single contiguous three-dimensional transparent conductive structure. The single contiguous three-dimensional transparent conductive structure may include one or more regions thereof having one or more three dimensional geometrical features in the one or more regions of the single contiguous three-dimensional transparent conductive structure so that the single contiguous three-dimensional transparent conductive structure possesses additional electrical-type and/or optical-type properties. For example, additional electrical-type and/or optical-type properties may include electrical current management and/or light management properties.
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公开(公告)号:US20190048488A1
公开(公告)日:2019-02-14
申请号:US16164795
申请日:2018-10-19
IPC分类号: C30B7/04 , H01L21/02 , C30B7/00 , C25D7/12 , C30B29/16 , C30B19/00 , C23C18/16 , C23C18/12 , C30B29/10
CPC分类号: C30B7/04 , C23C18/1216 , C23C18/1245 , C23C18/125 , C23C18/1283 , C23C18/1651 , C25D7/123 , C30B7/00 , C30B19/00 , C30B29/10 , C30B29/16 , H01L21/02175 , H01L21/02282 , H01L21/02293 , H01L21/02304 , H01L21/02307
摘要: A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
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公开(公告)号:US20170297922A1
公开(公告)日:2017-10-19
申请号:US15099580
申请日:2016-04-14
IPC分类号: C01G9/02
CPC分类号: C01G9/02
摘要: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
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公开(公告)号:US10981801B2
公开(公告)日:2021-04-20
申请号:US15099575
申请日:2016-04-14
摘要: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
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公开(公告)号:US20170297920A1
公开(公告)日:2017-10-19
申请号:US15099573
申请日:2016-04-14
IPC分类号: C01G9/02 , C23C16/458
摘要: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
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公开(公告)号:US20170260643A1
公开(公告)日:2017-09-14
申请号:US15606945
申请日:2017-05-26
IPC分类号: C30B7/04 , C30B29/10 , C30B19/00 , C23C18/12 , C25D7/12 , C23C18/16 , H01L21/02 , C30B7/00 , C30B29/16
CPC分类号: C30B7/04 , C23C18/1216 , C23C18/1245 , C23C18/125 , C23C18/1283 , C23C18/1651 , C25D7/123 , C30B7/00 , C30B19/00 , C30B29/10 , C30B29/16 , H01L21/02175 , H01L21/02282 , H01L21/02293 , H01L21/02304 , H01L21/02307
摘要: A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
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