Liquid composition containing aminoether for deposition of metal-containing films
    1.
    发明授权
    Liquid composition containing aminoether for deposition of metal-containing films 有权
    含有含有金属的膜的氨基醚的液体组合物

    公开(公告)号:US08507704B2

    公开(公告)日:2013-08-13

    申请号:US12871284

    申请日:2010-08-30

    摘要: A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.

    摘要翻译: 一种制剂,其包含:a)至少一种金属 - 配体配合物,其中一个或多个配体选自β-二酮酸酯,β-酮亚胺酸酯,β-酮酯酸酯,β-二亚胺酯,烷基,羰基,烷基羰基, 环戊二烯基,吡咯烷基,烷氧基化物,脒基,咪唑啉及其混合物; 金属选自元素周期表第2〜16族元素; 和(b)至少一种选自下组的氨基醚:R1R2NR3OR4NR5R6,R1OR4NR5R6,O(CH2CH2)2NR1,R1R2NR3N(CH2CH2)2O,R1R2NR3OR4N(CH2CH2)2O,O(CH2CH2)2NR1OR2N(CH2CH2) 其中R1-6独立地选自C1-10直链烷基,C1-10支链烷基,C1-10环烷基,C6-C10芳族,C1-10烷基胺,C1-10烷基氨基烷基,C1-10醚,C4 -C 10环醚,C 4 -C 10环氨基醚及其混合物。

    LIQUID COMPOSITION CONTAINING AMINOETHER FOR DEPOSITION OF METAL-CONTAINING FILMS
    2.
    发明申请
    LIQUID COMPOSITION CONTAINING AMINOETHER FOR DEPOSITION OF METAL-CONTAINING FILMS 有权
    含有金属膜的含有氨基甲酸酯的液体组合物

    公开(公告)号:US20110212629A1

    公开(公告)日:2011-09-01

    申请号:US12871284

    申请日:2010-08-30

    IPC分类号: H01L21/31 C09D7/12

    摘要: A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.

    摘要翻译: 一种制剂,其包含:a)至少一种金属 - 配体配合物,其中一个或多个配体选自由β-葡萄糖酮酮,酮基酮,酮基酯,β-二亚胺,烷基,羰基 ,烷基羰基,环戊二烯基,吡咯啉,烷氧基,脒基,咪唑并及其混合物; 金属选自元素周期表第2〜16族元素; 和(b)至少一种选自下组的氨基醚:R1R2NR3OR4NR5R6,R1OR4NR5R6,O(CH2CH2)2NR1,R1R2NR3N,CH2R2, 其中R1-6独立地选自C1-10直链烷基,C1-10支链烷基,C1-10环烷基,C6-C10芳族,C1-10烷基胺,C1-10烷基氨基烷基,C1-10醚,C4 -C 10环醚,C 4 -C 10环氨基醚及其混合物。

    Precursors for Depositing Group 4 Metal-Containing Films
    3.
    发明申请
    Precursors for Depositing Group 4 Metal-Containing Films 有权
    用于沉积第4组含金属膜的前体

    公开(公告)号:US20100143607A1

    公开(公告)日:2010-06-10

    申请号:US12629416

    申请日:2009-12-02

    IPC分类号: C23C16/50 C23C16/44 C23C16/22

    摘要: Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.

    摘要翻译: 本文描述的是含有第4族金属的前体,包含第4族金属的前体的组合物,以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面,含4族金属的前体由下式I表示:其中M包括选自Ti,Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基,其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。

    Precursors for depositing group 4 metal-containing films
    4.
    发明授权
    Precursors for depositing group 4 metal-containing films 有权
    用于沉积第4组含金属膜的前体

    公开(公告)号:US08471049B2

    公开(公告)日:2013-06-25

    申请号:US12629416

    申请日:2009-12-02

    IPC分类号: C07F7/28 C23C16/00

    摘要: Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.

    摘要翻译: 本文描述的是含有第4族金属的前体,包含第4族金属的前体的组合物,以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面,含4族金属的前体由下式I表示:其中M包括选自Ti,Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基,其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。

    Group 4 metal precursors for metal-containing films
    8.
    发明授权
    Group 4 metal precursors for metal-containing films 有权
    用于含金属膜的第4族金属前体

    公开(公告)号:US08952188B2

    公开(公告)日:2015-02-10

    申请号:US12904421

    申请日:2010-10-14

    摘要: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

    摘要翻译: 本发明涉及由下式表示的第4族金属前体:M(OR1)2(R2C(O)C(R3)C(O)OR1)2,其中M是Ti,Zr的第4族金属 ,或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基,优选甲基,乙基或正丙基; R2选自支链C 3-10烷基,优选异丙基,叔丁基,仲丁基,异丁基或叔戊基和C 6-12芳基; R 3选自氢,C 1-10烷基和C 6-12芳基,优选氢。 在本发明的优选实施方案中,前体是熔点低于60℃的液体或固体。

    Amidate Precursors For Depositing Metal Containing Films
    9.
    发明申请
    Amidate Precursors For Depositing Metal Containing Films 有权
    用于沉积含金属膜的酰胺前体

    公开(公告)号:US20120045589A1

    公开(公告)日:2012-02-23

    申请号:US13030227

    申请日:2011-02-18

    摘要: Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.

    摘要翻译: 挥发性金属酰胺化物金属络合物的实例是双(N-(叔丁基)乙基氨基乙酸酯)双(乙基甲基氨基)钛; (N-(叔丁基)(叔丁基)酰胺酯)三(乙基甲基氨基)钛; 双(N-(叔丁基)(叔丁基)酰胺酯)双(二甲基氨基)钛和(N-(叔丁基)(叔丁基)酰胺酯)三(二甲基氨基)钛。 术语“挥发性”适用于在低于200℃的温度下蒸气压高于0.5托的本发明任何前体。还描述了使用这些金属酰胺化物配体的含金属膜沉积。

    GROUP 4 METAL PRECURSORS FOR METAL-CONTAINING FILMS
    10.
    发明申请
    GROUP 4 METAL PRECURSORS FOR METAL-CONTAINING FILMS 有权
    第4组金属前驱物用于含金属膜

    公开(公告)号:US20110250126A1

    公开(公告)日:2011-10-13

    申请号:US12904421

    申请日:2010-10-14

    IPC分类号: C07F7/00 C01G23/047 C07F7/28

    摘要: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

    摘要翻译: 本发明涉及由下式表示的第4族金属前体:M(OR1)2(R2C(O)C(R3)C(O)OR1)2,其中M是Ti,Zr的第4族金属 ,或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基,优选甲基,乙基或正丙基; R2选自支链C 3-10烷基,优选异丙基,叔丁基,仲丁基,异丁基或叔戊基和C 6-12芳基; R 3选自氢,C 1-10烷基和C 6-12芳基,优选氢。 在本发明的优选实施方案中,前体是熔点低于60℃的液体或固体。