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    Cholesteric liquid crystal structure
    1.
    发明申请
    Cholesteric liquid crystal structure 有权
    胆固醇液晶结构

    公开(公告)号：US20120242918A1

    公开(公告)日：2012-09-27

    申请号：US13428895

    申请日：2012-03-23

    申请人： Sergiy Valyukh ,  Vladimir Chigrinov ,  Hoi Sing Kwok ,  Iryna Valyukh

    发明人： Sergiy Valyukh ,  Vladimir Chigrinov ,  Hoi Sing Kwok ,  Iryna Valyukh

    IPC分类号： G02F1/1335

    CPC分类号： G02F1/13718 ,  G02F1/19 ,  G02F2001/13478

    摘要： A liquid crystal optical device that includes a first substrate layer that is substantially flat and a second substrate layer that is substantially flat and parallel to the first substrate layer. The liquid crystal optical device further includes a layer of cholesteric liquid crystal disposed between the first substrate layer and the second substrate layer, where the layer of cholesteric liquid crystal is arranged in domains, each domain having a helical axis, wherein the helical axes of the domains have a plurality of orientations relative to an orientation of the first and second substrate layers, and where a wavefront of a light wave having a wavelength within a range of wavelengths changes after reflecting from the layer of cholesteric liquid crystal.

    摘要翻译： 一种液晶光学器件，其包括基本上平坦的第一衬底层和基本上平坦且平行于第一衬底层的第二衬底层。 液晶光学器件还包括设置在第一衬底层和第二衬底层之间的胆甾醇型液晶层，其中胆甾型液晶层布置在畴中，每个畴具有螺旋轴，其中， 畴具有相对于第一和第二衬底层的取向的多个取向，并且其中波长在波长范围内的波长的波前在从胆甾型液晶层反射之后改变。

    Low voltage liquid crystal lens with variable focal length
    2.
    发明授权
    Low voltage liquid crystal lens with variable focal length 有权
    具有可变焦距的低压液晶镜头

    公开(公告)号：US08471999B2

    公开(公告)日：2013-06-25

    申请号：US12988790

    申请日：2009-04-20

    申请人： Sergiy Valyukh ,  Vladimir Grigorievich Chigrinov ,  Hoi Sing Kwok

    发明人： Sergiy Valyukh ,  Vladimir Grigorievich Chigrinov ,  Hoi Sing Kwok

    IPC分类号： G02F1/13

    CPC分类号： G02F1/29 ,  G02F1/133305 ,  G02F1/133784 ,  G02F2001/291 ,  G02F2001/294

    摘要： Disclosed herein is a liquid crystal lens with a variable focal length. The gradient profile of the liquid crystals molecules that causes the gradient profile of the refractive index is achieved by inducing non-uniformly distributed anchoring energy and an external electric or magnetic field applied to the liquid crystal layer. Unlike existing electrically controlled liquid crystal lens, the external electric or magnetic field has a uniform spatial distribution within the liquid crystal layer. The focal length of the liquid crystal lens is controlled via the non-uniformly distributed anchoring energy and by varying the uniformly distributed electric or magnetic field.

    摘要翻译： 这里公开了具有可变焦距的液晶透镜。 导致折射率梯度分布的液晶分子的梯度分布通过引起非均匀分布的锚定能量和施加到液晶层的外部电场或磁场来实现。 与现有的电控液晶透镜不同，外部电场或磁场在液晶层内具有均匀的空间分布。 通过非均匀分布的锚定能量和通过改变均匀分布的电场或磁场来控制液晶透镜的焦距。

    Low voltage liquid crystal lens with variable focal length
    3.
    发明申请
    Low voltage liquid crystal lens with variable focal length 有权
    具有可变焦距的低压液晶镜头

    公开(公告)号：US20110043717A1

    公开(公告)日：2011-02-24

    申请号：US12988790

    申请日：2009-04-20

    申请人： Sergiy Valyukh ,  Vladimir Grigorievich Chigrinov ,  Hoi Sing Kwok

    发明人： Sergiy Valyukh ,  Vladimir Grigorievich Chigrinov ,  Hoi Sing Kwok

    IPC分类号： G02F1/1337 ,  G02F1/133

    CPC分类号： G02F1/29 ,  G02F1/133305 ,  G02F1/133784 ,  G02F2001/291 ,  G02F2001/294

    摘要： Disclosed herein is a liquid crystal lens with a variable focal length. The gradient profile of the liquid crystals molecules that causes the gradient profile of the refractive index is achieved by inducing non-uniformly distributed anchoring energy and an external electric or magnetic field applied to the liquid crystal layer. Unlike existing electrically controlled liquid crystal lens, the external electric or magnetic field has a uniform spatial distribution within the liquid crystal layer. The focal length of the liquid crystal lens is controlled via the non-uniformly distributed anchoring energy and by varying the uniformly distributed electric or magnetic field.

    摘要翻译： 这里公开了具有可变焦距的液晶透镜。 导致折射率梯度分布的液晶分子的梯度分布通过引起非均匀分布的锚定能量和施加到液晶层的外部电场或磁场来实现。 与现有的电控液晶透镜不同，外部电场或磁场在液晶层内具有均匀的空间分布。 通过非均匀分布的锚定能量和通过改变均匀分布的电场或磁场来控制液晶透镜的焦距。

    Ultrathin film multi-crystalline photovoltaic device
    6.
    发明授权
    Ultrathin film multi-crystalline photovoltaic device 有权
    超薄膜多晶光伏器件

    公开(公告)号：US09299863B2

    公开(公告)日：2016-03-29

    申请号：US12437236

    申请日：2009-05-07

    申请人： Hoi Sing Kwok ,  Zhiguo Meng ,  Man Wong

    发明人： Hoi Sing Kwok ,  Zhiguo Meng ,  Man Wong

    IPC分类号： H01L31/0236 ,  H01L31/076 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

    CPC分类号： H01L31/0236 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/076 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solar cell photovoltaic device using ultrathin films of polycrystalline silicon and deep uneven surface structures is disclosed. According to one embodiment, the uneven structures include one or more pits having a depth of at least 10 microns. According to another embodiment, the uneven structures include one or more cones or columns having a height or at least 10 microns. Because the unevenness of the structures, the photovoltaic device is able to use a very thin layer of polycrystalline silicon to effectively trap and absorb light.

    摘要翻译： 公开了一种使用多晶硅和深凹凸表面结构的超薄膜的太阳能电池光伏器件。 根据一个实施例，不平坦结构包括具有至少10微米深度的一个或多个凹坑。 根据另一个实施例，不平坦结构包括具有高度或至少10微米的一个或多个锥体或柱。 由于结构的不均匀性，光伏器件能够使用非常薄的多晶硅层来有效地捕获和吸收光。

    Cholesteric liquid crystal structure
    7.
    发明授权
    Cholesteric liquid crystal structure 有权
    胆固醇液晶结构

    公开(公告)号：US09046729B2

    公开(公告)日：2015-06-02

    申请号：US13428895

    申请日：2012-03-23

    申请人： Sergiy I. Valyukh ,  Vladimir Grigorievich Chigrinov ,  Hoi Sing Kwok ,  Iryna V. Valyukh

    发明人： Sergiy I. Valyukh ,  Vladimir Grigorievich Chigrinov ,  Hoi Sing Kwok ,  Iryna V. Valyukh

    IPC分类号： G02F1/1335 ,  G02F1/137 ,  G02F1/19 ,  G02F1/1347

    CPC分类号： G02F1/13718 ,  G02F1/19 ,  G02F2001/13478

    摘要： A liquid crystal optical device that includes a first substrate layer that is substantially flat and a second substrate layer that is substantially flat and parallel to the first substrate layer. The liquid crystal optical device further includes a layer of cholesteric liquid crystal disposed between the first substrate layer and the second substrate layer, where the layer of cholesteric liquid crystal is arranged in domains, each domain having a helical axis, wherein the helical axes of the domains have a plurality of orientations relative to an orientation of the first and second substrate layers, and where a wavefront of a light wave having a wavelength within a range of wavelengths changes after reflecting from the layer of cholesteric liquid crystal.

    摘要翻译： 一种液晶光学器件，其包括基本上平坦的第一衬底层和基本上平坦且平行于第一衬底层的第二衬底层。 液晶光学器件还包括设置在第一衬底层和第二衬底层之间的胆甾醇型液晶层，其中胆甾型液晶层布置在畴中，每个畴具有螺旋轴，其中， 畴具有相对于第一和第二衬底层的取向的多个取向，并且其中波长在波长范围内的波长的波前在从胆甾型液晶层反射之后改变。

    Transient liquid crystal architecture
    8.
    发明授权
    Transient liquid crystal architecture 有权
    瞬态液晶架构

    公开(公告)号：US08482506B2

    公开(公告)日：2013-07-09

    申请号：US11967947

    申请日：2007-12-31

    申请人： Hoi Sing Kwok ,  Yuet Wing Li

    发明人： Hoi Sing Kwok ,  Yuet Wing Li

    IPC分类号： G09G3/38

    CPC分类号： G09G3/3622 ,  G09G3/2011 ,  G09G3/2014 ,  G09G3/3406 ,  G09G3/3648 ,  G09G2300/0486 ,  G09G2310/0235 ,  G09G2310/0237 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/0252

    摘要： Methods and systems for displaying videos with high contrast using fast transient response of liquid crystal materials are disclosed. The system comprises a liquid crystal material treated with a chiral dopant, which is aligned between two substrates with conductive layer on each substrate. The system can be operated in an active or passive matrix mode display. The active matrix display can be a thin film transistor (TFT) or MOS transistor, whereas no transistors are used for the passive matrix mode display. A full color display, with high contrast, can be achieved by illuminating the transient liquid crystal material with a pulsed backlight.

    摘要翻译： 公开了使用液晶材料的快速瞬态响应来显示具有高对比度的视频的方法和系统。 该系统包括用手性掺杂剂处理的液晶材料，其在每个基板上具有导电层的两个基板之间对准。 该系统可以在主动或无源矩阵模式显示中运行。 有源矩阵显示器可以是薄膜晶体管（TFT）或MOS晶体管，而无源晶体管用于无源矩阵模式显示。 通过用脉冲背光照亮瞬态液晶材料，可以实现高对比度的全彩显示。

    Metal-induced crystallization of amorphous silicon in thin film transistors
    9.
    发明授权
    Metal-induced crystallization of amorphous silicon in thin film transistors 有权
    薄膜晶体管中非晶硅的金属诱导结晶

    公开(公告)号：US07790580B2

    公开(公告)日：2010-09-07

    申请号：US11684447

    申请日：2007-03-09

    申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

    发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

    摘要： The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

    摘要翻译： 本发明提供一种形成包括多晶半导体膜的薄膜晶体管的方法。 该方法包括将非晶半导体薄膜的第一层沉积到衬底上; 在第一非晶半导体薄膜层上沉积第二层薄膜; 图案化第二层薄膜，使得第一层非晶半导体薄膜在选定的位置曝光; 将溶液或气相中的第一和第二层薄膜暴露于含镍化合物; 去除第二层薄膜; 以及在升高的温度下使所述第一非晶半导体薄膜层退火，使得所述第一非晶半导体薄膜层转变为多晶半导体薄膜。

    Polycrystalline silicon thin film transistors with bridged-grain structures
    10.
    发明授权
    Polycrystalline silicon thin film transistors with bridged-grain structures 有权
    具有桥接晶粒结构的多晶硅薄膜晶体管

    公开(公告)号：US08426865B2

    公开(公告)日：2013-04-23

    申请号：US12666220

    申请日：2008-02-04

    申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

    发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

    IPC分类号： H01L27/108

    CPC分类号： H01L29/78696 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66757

    摘要： A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced.

    摘要翻译： 低温多晶硅器件及其制造技术，性能优良。 使用称为桥接晶粒结构（BG）的掺杂多晶硅线，本征或轻掺杂沟道被分离成多个区域。 覆盖包括掺杂线的整个有源沟道的单个栅极仍然用于控制电流。 使用该BG多晶硅作为有源层，并确保TFT被设计成使得电流垂直于平行的晶粒线流动，可以减小晶界效应。