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    Plasma display device and driving method thereof
    1.
    发明申请
    Plasma display device and driving method thereof 审中-公开
    等离子体显示装置及其驱动方法

    公开(公告)号：US20090135100A1

    公开(公告)日：2009-05-28

    申请号：US12292740

    申请日：2008-11-25

    申请人： Seung-Min Kim ,  Woo-Joon Chung ,  Tae-Seong Kim ,  Jun-Ho Lee

    发明人： Seung-Min Kim ,  Woo-Joon Chung ,  Tae-Seong Kim ,  Jun-Ho Lee

    IPC分类号： G09G3/28

    CPC分类号： G09G3/2927 ,  G09G2310/066 ,  G09G2320/0238

    摘要： A method of driving a frame of plasma display device having a first electrode, a second electrode, and an address electrode, the method including gradually decreasing a voltage of the second electrode from a second voltage to a third voltage and, while decreasing the voltage of the second electrode, supplying a vertical synchronization pulse and applying a first voltage to the first electrode, after the voltage of the second electrode reaches the third voltage, gradually increasing the voltage of the second electrode from a fifth voltage to a sixth voltage while a fourth voltage is applied to the first electrode, and, after the voltage of the second electrode reaches the sixth voltage, gradually decreasing the voltage of the second electrode from an eighth voltage to a ninth voltage while a seventh voltage is applied to the first electrode.

    摘要翻译： 一种驱动具有第一电极，第二电极和寻址电极的等离子体显示装置的框架的方法，所述方法包括将第二电极的电压从第二电压逐渐降低到第三电压，并且同时降低 所述第二电极在所述第二电极的电压达到所述第三电压之后，向所述第一电极提供垂直同步脉冲并施加第一电压，将所述第二电极的电压从第五电压逐渐增加至第六电压， 电压施加到第一电极，并且在第二电极的电压达到第六电压之后，当第七电压被施加到第一电极时，将第二电极的电压从第八电压逐渐降低到第九电压。

    PLASMA DISPLAY AND DRIVING METHOD THEREOF
    2.
    发明申请
    PLASMA DISPLAY AND DRIVING METHOD THEREOF 审中-公开
    等离子体显示及其驱动方法

    公开(公告)号：US20080191971A1

    公开(公告)日：2008-08-14

    申请号：US11967752

    申请日：2007-12-31

    申请人： Seung-Min Kim ,  Woo-Joon Chung ,  Seung-Won Choi ,  Tae-Seong Kim ,  Jun-Ho Lee

    发明人： Seung-Min Kim ,  Woo-Joon Chung ,  Seung-Won Choi ,  Tae-Seong Kim ,  Jun-Ho Lee

    IPC分类号： G09G3/28

    CPC分类号： G09G3/2925 ,  G09G3/2927 ,  G09G3/296 ,  G09G2310/066 ,  G09G2330/028

    摘要： In a plasma display device and a driving method thereof, a switch for applying a voltage rising waveform to a scan electrode during an idle period and a first period is coupled between the scan electrode and a power source. The switch applies the voltage rising waveform having a first slope by being repeatedly turned on/off according to a first control signal during the idle period, and/or the switch applies the voltage rising waveform having a second slope (having a higher gradient than the first slope) by being repeatedly turned on/off according to a second control signal during the first period. As such, the scan electrode voltage is increased with the first slope during the idle period to perform a more stable reset operation. Also, when the idle period does not exist, the voltage of the scan electrode is increased within the first period to enable a normal reset operation.

    摘要翻译： 在等离子体显示装置及其驱动方法中，在扫描电极和电源之间耦合用于在空闲周期和第一周期期间向扫描电极施加升压波形的开关。 开关通过在空闲期间根据第一控制信号重复接通/断开，施加具有第一斜率的升压波形，和/或开关施加具有第二斜率（比梯形图 第一斜坡），通过在第一时段期间根据第二控制信号重复地接通/断开。 这样，在空闲期间，扫描电极电压随着第一斜率增加，以执行更稳定的复位操作。 此外，当空闲时段不存在时，扫描电极的电压在第一时间段内增加，以使得能够进行正常的复位操作。

    DRIVING METHOD OF PLASMA DISPLAY PANEL
    3.
    发明申请
    DRIVING METHOD OF PLASMA DISPLAY PANEL 审中-公开
    等离子显示面板的驱动方法

    公开(公告)号：US20090213105A1

    公开(公告)日：2009-08-27

    申请号：US12391978

    申请日：2009-02-24

    申请人： Jun-Ho Lee ,  Woo-Joon Chung ,  Tae-Seong Kim ,  Seong-Joon Jeong

    发明人： Jun-Ho Lee ,  Woo-Joon Chung ,  Tae-Seong Kim ,  Seong-Joon Jeong

    IPC分类号： G09G5/00 ,  G09G3/28

    CPC分类号： G09G3/294 ,  G09G3/2942 ,  G09G2310/066 ,  G09G2320/0233

    摘要： A driving method for a plasma display panel capable of stabilizing a sustain discharge. The driving method for a plasma display panel according to exemplary embodiments of the present invention includes applying a signal gradually rising to a first voltage to scan electrodes during a first period of a sustain period, and applying a second voltage to sustain electrodes during the first period.

    摘要翻译： 一种能够稳定维持放电的等离子体显示面板的驱动方法。 根据本发明的示例性实施例的等离子体显示面板的驱动方法包括在维持周期的第一周期期间对扫描电极施加逐渐上升的扫描电极的信号，以及在第一周期期间向维持电极施加第二电压 。

    Image forming apparatus employing an electrical charge removal device with an improved configuration
    5.
    发明授权
    Image forming apparatus employing an electrical charge removal device with an improved configuration 有权
    采用具有改进结构的电荷去除装置的图像形成装置

    公开(公告)号：US08396394B2

    公开(公告)日：2013-03-12

    申请号：US12787931

    申请日：2010-05-26

    申请人： Jun-Ho Lee ,  Jeong-Yong Ju

    发明人： Jun-Ho Lee ,  Jeong-Yong Ju

    IPC分类号： G03G15/16

    CPC分类号： G03G21/06 ,  G03G15/163 ,  G03G21/1647 ,  G03G21/1661 ,  G03G21/168 ,  G03G2221/1642 ,  G03G2221/1654

    摘要： An image forming apparatus, including: a main body; an image carrying body disposed in the main body, a transfer unit and an electrical charge removal unit. The image forming apparatus forms a visible image on the image carrying body by carrying out charging, exposing and developing processes. The transfer unit transfers the visible image from the image carrying body to a printing medium. The electrical charge removal unit is configured to remove residual electrical charge from the printing medium, and is movable, in cooperation with at least one replaceable component part of the transfer unit, between an operable position at which the electrical charge removal unit is capable of removing the electrical charge from the printing medium and a non-interfering position at which the electrical charge removal unit does not interfere with the movement of the at least one replaceable component part of the transfer unit being received into or being removed from the main body for replacement.

    摘要翻译： 一种图像形成装置，包括：主体; 设置在主体中的图像承载体，转印单元和电荷去除单元。 图像形成装置通过进行充电，曝光和显影处理在图像载体上形成可见图像。 传送单元将可见图像从图像承载体传送到打印介质。 电荷去除单元被配置为从打印介质去除残留的电荷，并且可以与所述转印单元的至少一个可替换的组成部分协作地在所述电荷去除单元能够移除的可操作位置之间移动 来自打印介质的电荷和非干扰位置，在该非干扰位置，电荷消除单元不干扰转移单元的至少一个可更换部件的移动，该移动单元被接收到主体中或从主体移除以进行更换 。

    Methods of fabricating semiconductor devices including elevated source and drain regions
    6.
    发明授权
    Methods of fabricating semiconductor devices including elevated source and drain regions 有权
    制造包括升高的源极和漏极区域的半导体器件的方法

    公开(公告)号：US07867865B2

    公开(公告)日：2011-01-11

    申请号：US12166575

    申请日：2008-07-02

    申请人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    发明人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

    摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

    摘要翻译： 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。

    Semiconductor Devices Including Elevated Source and Drain Regions and Methods of Fabricating the Same
    9.
    发明申请
    Semiconductor Devices Including Elevated Source and Drain Regions and Methods of Fabricating the Same 有权
    包括提升源和排水区的半导体器件及其制造方法

    公开(公告)号：US20090008717A1

    公开(公告)日：2009-01-08

    申请号：US12166575

    申请日：2008-07-02

    申请人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    发明人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    IPC分类号： H01L21/336 ,  H01L27/088

    CPC分类号： H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

    摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

    摘要翻译： 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。