摘要:
A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.
摘要:
A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.
摘要:
A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.
摘要:
A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.
摘要:
A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and a plurality of unidirectional polarity selection devices. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The unidirectional polarity selection devices are connected in parallel and such that they have opposing polarities. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.
摘要:
Apparatus for performing high voltage testing of high-voltage transistors in the programming paths of a user-configurable integrated circuit including a plurality of conductors which may be connected to one another and to functional circuit blocks by programming user-programmable antifuse elements connected thereto to form electronic circuits, prior to formation of the electronic circuits by a user, including circuitry, responsive to signals provided to the integrated circuit from an external source, for temporarily connecting together a first group of the conductors to form a circuit path, the circuit path including the source and drain of at least one of the high-voltage transistors during a selected time period; circuitry for driving the circuit path and the gate of the at least one high-voltage transistor to a first voltage potential during the selected time period; circuitry for driving the bulk semiconductor region in the integrated circuit containing the source and drain of the at least one high-voltage transistor to a second voltage potential different from the first voltage potential during the selected time period, wherein the difference between the first voltage potential and the second voltage potential is more than the voltage necessary to cause degradation of faulty high-voltage transistors but less than the voltage necessary to cause degradation of properly functioning high-voltage transistors; and circuitry for measuring the current flowing between the first and second voltage potentials during the selected time period.
摘要:
In an integrated circuit having a plurality of function modules, each of the function modules having at least two inputs and at least one output. The integrated circuit is user programmable such that interconnections between selected ones of the function modules and input/output pins on the integrated circuit may be made. The integrated circuit further having two states, a first unprogrammed state where none of the interconnections have been made, and a second, programmed state in which selected interconnections have been made. Circuitry for testing the functionality of individual ones of the function modules when the integrated circuit is in the unprogrammed state comprises addressing means for selecting any one of the function modules, data input means for providing a selected logic level to at least one of the inputs of the function module selected by the addressing means, and output-connecting means, responsive to the addressing means, for temporarily connecting the output of the selected one of the function modules to one of the input/output pins on the integrated circuit.
摘要:
In a user-configurable integrated circuit including a plurality of uncommitted conductors which may be programmably connected to one another and to functional circuit blocks by a user to form electronic circuits, apparatus for testing for defects in the form of breaks in the electrical continuity of individual ones of the conductors prior to formation of the electronic circuits by a user, including circuitry responsive to external signals for temporarily connecting together selected ones of the uncommitted conductors to form a series circuit having a first end conductor and a second end conductor, circuitry for placing an electrical charge on the first end conductor such that a selected dynamic voltage is placed on the first end conductor, circuitry for driving the second end conductor to a voltage different from the selected dynamic voltage, circuitry for sensing the voltage on the first end conductor at a predetermined time after the driving voltage has been removed, circuitry for storing a signal related to the sensed voltage on the first end conductor, and circuitry for communicating the signal to an input/output pad of the integrated circuit.
摘要:
Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.
摘要:
Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.