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公开(公告)号：US20190144381A1
公开(公告)日：2019-05-16
申请号：US15741772
申请日：2017-12-21
Inventor： Yue WU
IPC: C07C321/04 , C07C319/02
Abstract: A copper protective agent is provided. The copper protective agent is represented by a general formula (GI): HS—R (GI); and R is a linear or branched alkyl group having 1 to 20 carbon atoms.
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公开(公告)号：US20170125449A1
公开(公告)日：2017-05-04
申请号：US14908087
申请日：2015-12-18
Inventor： Zhichao ZHOU , Yue WU
IPC: H01L27/12 , H01L29/45 , H01L29/66 , H01L29/423 , H01L21/443 , H01L29/786 , H01L29/49 , H01L29/417
CPC classification number: H01L27/1225 , H01L21/443 , H01L27/1259 , H01L29/41733 , H01L29/42372 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/7869
Abstract: The present disclosure proposes a TFT. The source and the drain of the TFT are disposed on the same side as the gate. The gate includes a first buffer layer, a first copper layer, a second copper layer and a second buffer layer that are stacked from bottom to top, and the second buffer layer is disposed on the side that is close to the source and drain. The source and drain include a first buffer layer, a first copper layer, a second copper layer and a second buffer layer that are stacked, and the first buffer layer is disposed on the side that is close to the gate. The first copper layer is deposited by a first power, the second copper layer is deposited by a second power lower than the first power. Through the above method, it is prevents photoresist from shedding when etching.
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公开(公告)号：US20170115517A1
公开(公告)日：2017-04-27
申请号：US14908080
申请日：2015-12-28
Inventor： Yue WU
IPC: G02F1/1368 , H01L21/311 , H01L21/3213 , H01L27/12 , H01L21/027
CPC classification number: G02F1/1368 , G02F1/136227 , G02F2001/136222 , G02F2001/136236 , G02F2001/13625 , H01L21/0274 , H01L21/31138 , H01L21/32133 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L27/1296 , H01L27/3248
Abstract: A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which reveals the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer on the vias-region ITO film layer and an exposure process to the photoresist layer on the non vias-region ITO film layer; developing the photoresist layer on the vias-region ITO and the non vias-region ITO film layers to obtain a photoresist layer plug covered on the vias-region ITO film layer. The present invention utilizes the photoresist to fill the through hole which can improve the quality of a display device.
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公开(公告)号：US20170160613A1
公开(公告)日：2017-06-08
申请号：US14786123
申请日：2015-09-30
Inventor： Yue WU , Zhichao ZHOU
IPC: G02F1/1362 , G02F1/1343 , H01L27/12 , G02F1/1368
CPC classification number: G02F1/136213 , G02F1/13439 , G02F1/136227 , G02F1/1368 , G02F2201/123 , G02F2202/16 , G02F2203/01 , H01L27/1225 , H01L27/1244 , H01L27/1255 , H01L27/1288
Abstract: A TFT substrate, a TFT transistor and the manufacturing method thereof are disclosed. The method includes: providing a substrate; arranging a gate on the substrate; arranging a semiconductor layer on the gate; arranging a source on the semiconductor layer, and the source electrically connects with the semiconductor layer; and arranging a first insulation layer on the source, and arranging a pixel electrode on the first insulation layer, the pixel electrode operating as a drain electrically connects to the semiconductor layer via a first through hole on the first insulation layer. As such, the short-circuit risk occurring during the etching process of the source and the drain may be reduced when the resistance of the TFT transistor is relatively low.
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公开(公告)号：US20180217459A1
公开(公告)日：2018-08-02
申请号：US15125194
申请日：2016-07-29
Inventor： Yue WU , Weina YONG , Bangyin PENG
IPC: G02F1/1362 , G02F1/1368 , H01L27/12
CPC classification number: G02F1/136227 , G02F1/133707 , G02F1/134309 , G02F1/136286 , G02F1/1368 , G02F2201/40 , H01L27/124
Abstract: The present disclosure provides an array substrate and a liquid crystal display panel, the array substrate includes a plurality of gate lines spaced in parallel and a plurality of data lines spaced in parallel, a plurality of pixel areas are orthogonally disposed the plurality of gate lines and the plurality of data lines; the plurality of gate lines and the plurality of data line are insulated orthogonal, the each pixel area includes a TFT switch, a pixel electrode, the TFT switch connects the gate line and data line of the pixel area where the TFT switch is located, a via hole is arranged in the pixel electrode, the via hole is arranged adjacent to the TFT switch, the pixel electrode is electrically connected through the via hole and the TFT switch arranged in the pixel electrode.
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Patent Agency Ranking
公开(公告)号：US20180203308A1
公开(公告)日：2018-07-19
申请号：US15117444
申请日：2016-07-20
Inventor： Zhichao ZHOU , YU-LIEN CHOU , Yue WU
IPC: G02F1/1343 , G02F1/1335 , G02F1/1368 , H01L27/12
CPC classification number: G02F1/134363 , G02F1/133514 , G02F1/133707 , G02F1/1368 , G02F2001/134345 , G02F2202/10 , H01L27/1218 , H01L27/1225
Abstract: The present disclosure relates to an array substrate and a display panel. The array substrate includes a substrate, a patterned middle layer arranged on the substrate, and a pixel electrode layer configured with no patterns being arranged on the patterned middle layer. The pixel electrode layer includes at least one protrusion area and at least one depressed area formed in accordance with the patterned middle layer. The array substrate may effectively resolve the dark-stripe issues.
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公开(公告)号：US20190144748A1
公开(公告)日：2019-05-16
申请号：US15742097
申请日：2017-11-24
Inventor： Yue WU , Shan Li , Chunsheng JIANG , Chia-Yu Lee
Abstract: A Cu—MoTi etching solution is provided. The Cu—MoTi etching solution includes 5 to 30 wt % of an oxidant, 3 to 15 wt % of an acid, 3 to 15 wt % of an inorganic salt, and the balance deionized water. The oxidant is selected from hydrogen peroxide or persulfuric acid. The acid is selected from polycarboxylic acids, amino acids, or inorganic acids. The inorganic salt is selected from diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
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公开(公告)号：US20180157138A1
公开(公告)日：2018-06-07
申请号：US14907938
申请日：2015-11-30
Inventor： Yue WU
IPC: G02F1/1362 , H01L27/12 , H01L29/06 , H01L29/786
CPC classification number: G02F1/136286 , G02F1/1368 , H01L27/12 , H01L27/124 , H01L29/06 , H01L29/08 , H01L29/41733 , H01L29/42384 , H01L29/786 , H01L29/78696
Abstract: Provided is a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel includes a substrate and a thin film transistor formed on the substrate, wherein a source and a drain of the thin film transistor have complementary V-shaped structures, so as to form a V-shaped space region between the source and the drain, such that when the thin film transistor is in operation, a V-shaped conductive channel is formed in a semiconductor layer of the thin film transistor. An activation current of the thin film transistor can be increased.
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公开(公告)号：US20170315394A1
公开(公告)日：2017-11-02
申请号：US15648631
申请日：2017-07-13
Inventor： Yue WU
IPC: G02F1/1368 , H01L27/12 , H01L21/3213 , H01L21/311 , H01L21/027 , H01L27/32 , G02F1/1362
Abstract: A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which exposes the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer on the vias-region ITO film layer and an exposure process to the photoresist layer on the non vias-region ITO film layer; developing the photoresist layer on the vias-region ITO and the non vias-region ITO film layers to obtain a photoresist layer plug covered on the vias-region ITO film layer. The photoresist is provided to fill the through hole so as to improve the quality of a display device.
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公开(公告)号：US20180171485A1
公开(公告)日：2018-06-21
申请号：US15123645
申请日：2016-07-11
Inventor： Yue WU , Yu-lien CHOU , Zhichao ZHOU
IPC: C23F1/18
Abstract: The present disclosure discloses a copper etchant solution additives and a method for producing copper etchant solution. The method includes: producing copper etchant solution additives, wherein the copper etchant solution additives is an inorganic solution with cupric ions (Cu2+), and deionized water is a solvent for the copper etchant solution additives and is electric neutrality; before wet-etching, the copper etchant solution additives is added in the copper etchant solution, and the copper etchant solution is with a cupric ions (Cu2+) concentration of 700-1000 ppm. Through the above method, the present disclosure can improve etchant property of copper etchant solution to increase etching rate and uniformity.
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