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27 条记录 (耗时 0.023 秒)

    Diazodisulfones
    4.
    发明授权
    Diazodisulfones 失效
    重氮二砜

    公开(公告)号：US5216135A

    公开(公告)日：1993-06-01

    申请号：US962089

    申请日：1992-10-16

    申请人： Fumiyoshi Urano ,  Masaaki Nakahata ,  Hirotoshi Fujie ,  Keiji Oono

    发明人： Fumiyoshi Urano ,  Masaaki Nakahata ,  Hirotoshi Fujie ,  Keiji Oono

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039

    摘要： A diazodisulfone of the formula: ##STR1## wherein R.sup.1 is a C.sub.3-8 branched or cyclic alkyl group, and R.sup.2 is a C.sub.1-8 straight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.

    摘要翻译： 下式的重氮二砜：其中R 1为C 3-8支链或环状烷基，R 2为C 1-8直链，支链或环状烷基，当用于光致抗蚀剂时作为光酸产生剂是有效的 材质为300nm以下的光。

    Pattern forming contrast enhanced material utilizing water soluble photosensitive diazo compound and pattern forming method
    9.
    发明授权
    Pattern forming contrast enhanced material utilizing water soluble photosensitive diazo compound and pattern forming method 失效
    图案形成对比增强材料利用水溶性光敏重氮化合物和图案形成方法

    公开(公告)号：US5272036A

    公开(公告)日：1993-12-21

    申请号：US860209

    申请日：1992-03-27

    申请人： Yoshiyuki Tani ,  Masayuki Endo ,  Kazufumi Ogawa ,  Fumiyoshi Urano ,  Masaaki Nakahata

    发明人： Yoshiyuki Tani ,  Masayuki Endo ,  Kazufumi Ogawa ,  Fumiyoshi Urano ,  Masaaki Nakahata

    IPC分类号： C07C245/14 ,  C07C245/18 ,  C07D213/50 ,  G03F7/09 ,  G03F7/023 ,  G03F7/30

    CPC分类号： G03F7/091 ,  C07C245/14 ,  C07C245/18 ,  C07D213/50 ,  Y10S430/146

    摘要： Disclosed is a pattern forming contrast enhanced material comprising (a) a water soluble photosensitive compound selected from the group consisting of a water soluble aliphatic photosensitive compound (excluding ring compounds) having one or more of the group expressed by the formula (I), an aliphatic photosensitive quaternary ammonium salt having one or more of the group expressed by the formula (I), an aromatic photosensitive quaternary ammonium salt having one or more of the group expressed by the formula (I), and a photosensitive pyridinium salt having one or more of the group expressed by the formula (I), (b) a water soluble resin and (c) water and a pattern forming method using the same. ##STR1## According to the present invention, this material is used as a contrast enhanced layer in the exposure effected by deep ultraviolet ray such as an excimer laser beam to form a good fine pattern of a submicron order.

    摘要翻译： 公开了形成对比度增强材料的图案，其包含（a）选自具有一个或多个由式（I）表示的基团的水溶性脂族光敏化合物（不包括环化合物）的水溶性感光性化合物， 具有由式（I）表示的基团中的一个或多个的芳香族光敏季铵盐，具有式（I）表示的基团中的一个或多个的芳族光敏季铵盐和具有一个或多个 由式（I）表示的基团，（b）水溶性树脂和（c）水和使用其的图案形成方法。 （I）根据本发明，在通过诸如准分子激光束的深紫外线进行的曝光中，将该材料用作对比度增强层，以形成亚微米级的良好精细图案。

    Sulfonium salt compounds
    10.
    发明授权
    Sulfonium salt compounds 失效
    锍盐化合物

    公开(公告)号：US06723483B1

    公开(公告)日：2004-04-20

    申请号：US09730744

    申请日：2000-12-07

    申请人： Keiji Oono ,  Kazuhito Fukasawa ,  Kazunori Sakamoto ,  Fumiyoshi Urano ,  Motoshige Sumino ,  Shigeaki Imazeki

    发明人： Keiji Oono ,  Kazuhito Fukasawa ,  Kazunori Sakamoto ,  Fumiyoshi Urano ,  Motoshige Sumino ,  Shigeaki Imazeki

    IPC分类号： G03F7004

    CPC分类号： C07C381/12 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106

    摘要： A triphenyl sulfonium salt compound shown by the general formula [1] or [3]. (wherein R1 and R2 are each independently a hydrogen atom or a lower alkyl group, provided that at least one of R1 and R2 are a lower alkyl group, R3s are each independently an alkyl group, n is an integer of 0 to 3, i is an integer of 1 to 3, j is an integer of 0 to 2, provided that i+j=3, Y− is an anion derived from a sulfonic acid shown by the general formula [2] R4—SO3H  [2] [wherein R4 is an alkyl group or an aryl group which may have as a substituent an alkyl group]). (wherein X is a phenyl group which has a substituent at an ortho- and/or a meta-position, m is an integer of 1 to 3, q is an integer of 0 to 2, provided that m+q=3, p is 1 or 2 and Zp− is an anion derived from a carboxylic acid).

    摘要翻译： 由通式[1]或[3]表示的三苯基锍盐化合物（其中R 1和R 2各自独立地为氢原子或低级烷基，条件是R 1至少有一个 >和R 2为低级烷基，R 3各自独立地为烷基，n为0〜3的整数，i为1〜3的整数，j为0〜2的整数 条件是i + j = 3，Y 1是由通式[2]所示的衍生自磺酸的阴离子[其中R 4是可以具有取代基的烷基或芳基 烷基]）（其中X是在邻位和/或间位具有取代基的苯基，m为1〜3的整数，q为0〜2的整数，条件是m + q = 3，p为1或2，Z

    为衍生自羧酸的阴离子）。