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公开(公告)号：US06143258A
公开(公告)日：2000-11-07
申请号：US804232
申请日：1997-02-21
CPC分类号： A61L2/24 , B67D1/07 , B67D3/00 , B67D3/0009 , B67D3/0022 , C02F1/02 , B67D2210/00013 , B67D2210/00118 , C02F1/008
摘要： An apparatus for dispensing drinking water including of a chamber in which a container packed with drinking water is mounted, a conduit connected with the container in the chamber to dispense drinking water through the apparatus, and sterilizer installed adjacent the conduit means to apply sterilization with substantial heat thereto. The sterilizing means may include automatic control system to control automatically sterilizing with heat. The conduit may includes a storage area for storing drinking water within the conduit, and the storage area may includes two tanks for storing drinking water, one is a cold water tank including a refrigeration device to chill the drinking water, and the other is a hot water tank including heating device to heat the drinking water. The sterilization with heat may be done by heating the conduit with heaters installed surrounding thereof, or may be done by circulating hot water which is stored in the hot water tank through the apparatus. Furthermore, the sterilizer installed adjacent said conduit with the exception of the portions in which hot water is usually passed through in the apparatus during dispensing the drinking water to apply substantial sterilization with heat thereto.
摘要翻译： 一种用于分配饮用水的设备，包括其中安装有装有饮用水的容器的腔室，与室中的容器连接以将饮用水分配通过设备的导管，以及邻近管道装置安装的消毒器， 加热。 灭菌装置可以包括自动控制系统，以控制自动消毒。 导管可以包括用于在管道内存储饮用水的存储区域，并且存储区域可以包括用于储存饮用水的两个罐，一个是包括冷藏装置以冷却饮用水的冷水箱，另一个是热的 水箱包括加热装置，以加热饮用水。 用热量灭菌可以通过加热围绕其周围的加热器来加热管道，或者可以通过将存储在热水箱中的热水循环通过设备来进行。 此外，灭菌器安装在所述管道附近，除了在分配饮用水期间热水通常在设备中通过的部分以对其进行大量灭菌以加热。
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2.发明授权Plasma treatment apparatus and plasma treatment method performed by use of the same apparatus 失效使用相同的装置进行等离子体处理装置和等离子体处理方法公开(公告)号：US06424091B1
公开(公告)日：2002-07-23
申请号：US09421291
申请日：1999-10-20
IPC分类号： H01J724
CPC分类号： H01J37/32009 , H01J37/32348 , H01J37/32541 , H01J37/32559 , H01J37/32724 , H05H1/2406
摘要： A plasma treatment apparatus capable of efficiently performing a plasma treatment to a large area of an object while preventing the occurrence of streamer discharge is provided. The apparatus includes at least one pair of electrodes, gas supply unit for supplying a gas for plasma generation to a discharge space defined between the electrodes, and an electric power supply for applying an AC voltage between the electrodes to generate plasma of the gas for plasma generation in the discharge space. At least one of the pair of electrodes has a dielectric layer at an outer surface thereof. At least one of the pair of electrodes has a curved surface jutting into the discharge space. It is preferred that the electrodes are of a cylindrical structure. In this case, it is particularly preferred that the plasma treatment apparatus further includes a coolant supply unit for supplying a coolant to the interior of the electrodes to reduce an electrode temperature during the plasma treatment.
摘要翻译： 提供能够有效地对物体的大面积进行等离子体处理的等离子体处理装置，同时防止流光放电的发生。 该装置包括至少一对电极，用于将等离子体产生的气体供应到在电极之间限定的放电空间的气体供给单元和用于在电极之间施加AC电压的电源，以产生等离子体气体的等离子体 一代在放电空间。 该对电极中的至少一个在其外表面具有介电层。 所述一对电极中的至少一个具有突出到放电空间的弯曲表面。 电极优选为圆柱形结构。 在这种情况下，特别优选的是，等离子体处理装置还包括用于向电极内部供应冷却剂以在等离子体处理期间降低电极温度的冷却剂供应单元。
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3.发明授权Electrode for plasma generation, plasma treatment apparatus using the electrode, and plasma treatment with the apparatus 失效用于等离子体产生的电极，使用该电极的等离子体处理装置以及用该装置的等离子体处理公开(公告)号：US06489585B1
公开(公告)日：2002-12-03
申请号：US09627405
申请日：2000-07-27
IPC分类号： B23K1000
CPC分类号： H01J37/32009 , H01J37/32559
摘要： A plasma treatment apparatus includes two or more pairs of electrodes for plasma generation, a treatment chamber for accommodating the electrodes, gas supply unit for supplying a plasma-generation gas such as rare gas into the chamber, and a power supply. A pulse-like or AC voltage is applied between the electrodes to generate dielectric barrier discharge plasma of the gas in the vicinity of atmospheric pressure, so that an object placed between the electrodes is treated by the plasma. At least one of the electrodes is provided with a tubular electrode substrate and a protection layer formed by heat-fusion coating a glass-based material on at least an outer surface exposed to plasma of the tubular electrode substrate.
摘要翻译： 等离子体处理装置包括用于等离子体生成的两对或更多对电极，用于容纳电极的处理室，用于向室供应诸如稀有气体的等离子体产生气体的气体供给单元和电源。 在电极之间施加脉冲状或交流电压，以在大气压附近产生气体的电介质势垒放电等离子体，使得放置在电极之间的物体被等离子体处理。 至少一个电极设置有管状电极基板和通过在暴露于管状电极基板的等离子体的至少外表面上热熔涂覆玻璃基材料形成的保护层。
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公开(公告)号：US20120235038A1
公开(公告)日：2012-09-20
申请号：US13380810
申请日：2010-06-22
CPC分类号： G01N21/359 , G01J5/0014 , G01J5/02 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/08 , G01J5/0803 , G01J5/0862 , G01J5/12 , G01J5/20 , G01N21/3504
摘要： An infrared gas detector includes an infrared reception member, a package configured to accommodate the infrared reception member, and an optical filter. The infrared reception member includes a plurality of thermal infrared detection elements each configured to detect infrared based on heat caused by received infrared. The thermal infrared detection elements are placed side by side. The package is provided with a window opening configured to allow the infrared reception member to receive infrared. The optical filter is attached to the package so as to cover the window opening, and includes a plurality of filter elements respectively corresponding to the plurality of the thermal infrared detection elements. Each of the filter elements includes a filter substrate made of an infrared transparent material, a transmission filter configured to transmit infrared of a selected wavelength, and a cut-off filter configured to absorb infrared of a wavelength longer than the selected wavelength. The transmission filter and the cut-off filter are formed over the filter substrate. The filter substrate is thermally coupled to the package. The transmission filters of the respective filter elements are configured to transmit infrared of the different selected wavelengths.
摘要翻译： 红外线气体检测器包括红外线接收部件，被构造成容纳红外线接收部件的封装体和滤光器。 红外线接收构件包括多个热红外线检测元件，每个热红外线检测元件被配置为基于由接收到的红外线引起的热量来检测红外线。 热红外线检测元件并排放置。 该包装件设置有一个窗口，该开口被配置为允许红外线接收件接收红外线。 滤光器附接到封装以覆盖窗口，并且包括分别对应于多个热红外线检测元件的多个滤光元件。 每个滤光元件包括由红外线透明材料制成的滤光片基板，被配置为透射所选择的波长的红外线的透射滤光器和被配置为吸收长于所选波长的波长的红外线的截止滤光器。 透过滤波器和截止滤波器形成在滤波器基板上。 过滤器基板热耦合到封装。 各个滤波器元件的透射滤波器被配置成透射不同选择波长的红外线。
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5.发明申请INFRARED OPTICAL FILTER AND MANUFACTURING METHOD OF THE INFRARED OPTICAL FILTER 审中-公开红外光滤波器的红外光滤波器和制造方法公开(公告)号：US20110310472A1
公开(公告)日：2011-12-22
申请号：US13201180
申请日：2010-02-04
申请人： Takahiko Hirai , Hiroaki Kitamura , Yuichi Inaba , Yoshifumi Watabe , Takayuki Nishikawa , Takahiro Sono
发明人： Takahiko Hirai , Hiroaki Kitamura , Yuichi Inaba , Yoshifumi Watabe , Takayuki Nishikawa , Takahiro Sono
CPC分类号： G02B5/281 , C23C14/081 , C23C14/083 , C23C14/10
摘要： The infrared optical filter of the present invention comprises a substrate formed of an infrared transmitting material and a plurality of filter parts arranged side by side on one surface side of the substrate. Each filter part includes: a first λ/4 multilayer film in which two kinds of thin films having mutually different refractive indices but an identical optical film thickness are alternately stacked; a second λ/4 multilayer film in which the two kinds of thin films are alternately stacked, said second λ/4 multilayer film being formed on the opposite side of the first λ/4 multilayer film from the substrate side, and; and a wavelength selection layer interposed between the first λ/4 multilayer film and the second λ/4 multilayer film, said wavelength selection layer having an optical film thickness different from the optical film thickness of each the thin film according to a desired selection wavelength. A low refractive index material of the first λ/4 multilayer film and the second λ/4 multilayer film is an oxide, and a high refractive index material thereof is a semiconductor material of Ge. A material of the wavelength selection layer is identical to a material of the second thin film from the top of the first λ/4 multilayer film.
摘要翻译： 本发明的红外光滤波器包括由红外线透射材料形成的基板和在基板的一个表面侧上并排设置的多个滤光器部件。 每个过滤器部分包括：第一λ/ 4多层膜，其中具有相互不同的折射率但相同的光学膜厚度的两种薄膜交替堆叠; 其中两种薄膜交替层叠的第二λ/ 4多层膜，所述第二λ/ 4多层膜从基片侧形成在与第一λ/ 4多层膜相反的一侧上; 以及布置在第一λ/ 4多层膜和第二λ/ 4多层膜之间的波长选择层，所述波长选择层根据期望的选择波长具有与每个薄膜的光学膜厚度不同的光学膜厚度。 第一λ/ 4多层膜和第二λ/ 4多层膜的低折射率材料是氧化物，其高折射率材料是Ge的半导体材料。 波长选择层的材料与第一λ/ 4多层膜的顶部的第二薄膜的材料相同。
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公开(公告)号：US4489361A
公开(公告)日：1984-12-18
申请号：US438253
申请日：1982-11-01
申请人： Hiroaki Kitamura
发明人： Hiroaki Kitamura
CPC分类号： H02B5/06
摘要： This invention deals with a substation in which one terminal of a breaker which consists of breaking sections elevationally contacted and separated is electrically connected to a transformer, said breaker is contained in an insulator which is substantially vertically arranged, the lower portion of said insulator is mechanically connected to the tank of said transformer, and a connecting terminal which is electrically connected to the other terminal of said breaker is securely fixed onto the upper portion of said insulator.
摘要翻译： 本发明涉及一种变电站，其中由断开部分组成的断路器的一个端子电连接到变压器，所述断路器包含在基本垂直布置的绝缘体中，所述绝缘体的下部机械地 连接到所述变压器的容器，并且电连接到所述断路器的另一个端子的连接端子被牢固地固定到所述绝缘体的上部。
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公开(公告)号：US07378656B2
公开(公告)日：2008-05-27
申请号：US10576951
申请日：2004-10-27
申请人： Tsutomu Ichihara , Chousei Hamada , Koshi Akedo , Hiroaki Kitamura , Hiroshi Fukshima , Takuya Komoda , Takashi Hatai
发明人： Tsutomu Ichihara , Chousei Hamada , Koshi Akedo , Hiroaki Kitamura , Hiroshi Fukshima , Takuya Komoda , Takashi Hatai
IPC分类号： G01J5/02
CPC分类号： H01L37/00 , H05B3/009 , H05B3/265 , H05B2203/032
摘要： An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of pads 4 for energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.
摘要翻译： 红外线辐射元件在半导体衬底的厚度方向的表面上形成有比半导体衬底具有足够小的热导率的隔热层。 在隔热层上形成有与层（平面）形成并且具有比隔热层更大的导热性和更大导电性的加热层。 在加热层上形成一对用于通电的焊盘4。 半导体衬底由硅衬底制成。 绝热层和加热层由具有不同孔隙率的多孔硅层形成，并且加热层具有比隔热层更小的孔隙率。 通过使用红外辐射元件作为气体传感器的红外辐射源，可以延长红外辐射源的寿命。
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公开(公告)号：US20070090293A1
公开(公告)日：2007-04-26
申请号：US10576951
申请日：2004-10-27
申请人： Tsutomu Ichihara , Chousei Hamada , Koshi Akedo , Hiroaki Kitamura , Hiroshi Fukshima , Takuya Komoda , Takashi Hatai
发明人： Tsutomu Ichihara , Chousei Hamada , Koshi Akedo , Hiroaki Kitamura , Hiroshi Fukshima , Takuya Komoda , Takashi Hatai
IPC分类号： G01J5/02
CPC分类号： H01L37/00 , H05B3/009 , H05B3/265 , H05B2203/032
摘要： In the infrared radiation element (A), a heat insulating layer 2, which has sufficiently smaller thermal conductivity than a semiconductor substrate 1, is formed on a surface in the thickness direction of the semiconductor substrate 1, and a heating layer 3, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer 2, is formed on the heat insulating layer 2, and a pair of pads 4 for energization are formed on the heating layer 3. The semiconductor substrate 1 is made of a silicon substrate. The heat insulating layer 2 and the heating layer 3 are formed by porous silicon layers having different porosities from each other, and the heating layer 3 has smaller porosity than the heat insulating layer 2. By using the infrared radiation element (A) as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.
摘要翻译： 在红外线辐射元件（A）中，在半导体衬底1的厚度方向的表面上形成具有比半导体衬底1小的热导率的隔热层2和加热层3， 在绝热层2上形成层叠（平面）形式并且具有比绝热层2更大的导热性和更大的导电性，并且在加热层3上形成一对用于通电的焊盘4。 半导体衬底1由硅衬底制成。 绝热层2和加热层3由具有不同孔隙率的多孔硅层形成，并且加热层3具有比隔热层2更小的孔隙率。 通过使用红外线辐射元件（A）作为气体传感器的红外辐射源，可以延长红外辐射源的寿命。
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