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1.再颁专利
公开(公告)号：USRE33245E
公开(公告)日：1990-06-26
申请号：US209954
申请日：1988-06-22
申请人： Shigeki Tojyo , Tatsuo Uesaka, deceased , Yoshio Kawate , Masayoshi Iwasaki , Takefumi Horiuchi , Masato Moritoki , Takeshi Kanda , Takao Fujikawa , Shigeo Kofune
发明人： Shigeki Tojyo , Tatsuo Uesaka, deceased , Yoshio Kawate , Masayoshi Iwasaki , Takefumi Horiuchi , Masato Moritoki , Takeshi Kanda , Takao Fujikawa , Shigeo Kofune
CPC分类号： G01J5/08 , B30B11/002 , B30B11/005 , G01J5/0044 , G01J5/041 , G01J5/06 , G01J5/0806 , G01J5/0818 , G01J5/0821 , G01J5/0834 , G01J5/0896 , G01J2005/0048 , G01J5/045 , G01J5/52
摘要： A method of measuring the temperature in a high pressure furnace of a hot isostatic pressing apparatus, wherein a closed-end pipe having its inside communicated with the inside of the high pressure furnace and enabling a pressure medium to pass therethrough is disposed in the furnace, an incident top end of an optical fiber, a bundle of optical fibers or like other equivalent optical rod-like memeber is disposed to the open end of the closed-end pipe so as to be capable of receiving thermally radiated light from the inside of the closed-ended pipe and an exit rear end thereof is led out through a cover and to the outside of said high pressure vessel and a measuring system is connected to said exit rear end to detect heat radiation power from the top end of the closed-end pipe to thereby measure the temperature inside of the furnace.
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2.发明授权
公开(公告)号：US4666314A
公开(公告)日：1987-05-19
申请号：US873452
申请日：1986-06-06
申请人： Shigeki Tojyo , Tatsuo Uesaka , Yoshio Kawate , Masayoshi Iwaskai , Takefumi Horiuchi , Masato Moritoki , Takeshi Kanda , Takao Fujikawa , Shigeo Kofune
发明人： Shigeki Tojyo , Tatsuo Uesaka , Yoshio Kawate , Masayoshi Iwaskai , Takefumi Horiuchi , Masato Moritoki , Takeshi Kanda , Takao Fujikawa , Shigeo Kofune
CPC分类号： G01J5/08 , B30B11/002 , B30B11/005 , G01J5/0044 , G01J5/041 , G01J5/06 , G01J5/0806 , G01J5/0818 , G01J5/0821 , G01J5/0834 , G01J5/0896 , G01J2005/0048 , G01J5/045 , G01J5/52
摘要： A method of measuring the temperature in a high pressure furnace of a hot isostatic pressing apparatus, wherein a closed-end pipe having its inside communicated with the inside of the high pressure furnace and enabling a pressure medium to pass therethrough is disposed in the furnace, an incident top end of an optical fiber, a bundle of optical fibers or like other equivalent optical rod-like memeber is disposed to the open end of the closed-end pipe so as to be capable of receiving thermally radiated light from the inside of the closed-ended pipe and an exit rear end thereof is led out through a cover and to the outside of said high pressure vessel and a measuring system is connected to said exit rear end to detect heat radiation power from the top end of the closed-end pipe to thereby measure the temperature inside of the furnace.
摘要翻译： 一种在等压压制装置的高压炉中测定温度的方法，其特征在于，在所述炉内设置封闭式管，其内部与高压炉内部连通，压力介质通过， 光纤的入射顶端，一束光纤或类似的其他等效的光棒状元件设置在封闭端管的开口端，以便能够从内侧接受热辐射光 封闭管及其出口后端通过盖引出并且到达所述高压容器的外部，并且测量系统连接到所述出口后端以检测来自封闭端的顶端的热辐射功率 从而测量炉内的温度。
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公开(公告)号：US4582681A
公开(公告)日：1986-04-15
申请号：US435662
申请日：1982-10-21
申请人： Akira Asari , Shiro Matsuura , Hidehiro Tsuzuki , Yohichi Inoue , Masato Moritoki , Takao Fujikawa , Junichi Miyanaga
发明人： Akira Asari , Shiro Matsuura , Hidehiro Tsuzuki , Yohichi Inoue , Masato Moritoki , Takao Fujikawa , Junichi Miyanaga
CPC分类号： B30B11/002 , B22F3/15 , B28B3/006
摘要： A hot isostatic pressing system including a hot isostatic pressing station having a high pressure container constituted by a vertical pressure-resistant cylinder closed at the top end thereof and a lower lid detachably fitted to the bottom of the pressure resistant cylinder and a treating chamber internally provided with a heater and enclosed by a heat insulating wall, and a mechanism for adjusting an atmospheric gas pressure and temperature of the pressing station into a condition suitable for the hot isostatic pressing of a work item accommodated in the treating chamber; a plurality of auxiliary stations each provided with an opening for receiving from beneath thereof the heat insulating wall of the treating chamber accommodating the internal heater and a work item, a support structure for supporting the heat insulating wall, and a mechanism for cooling the work item and internal heater in an inert gas atmosphere; a carriage for transferring the lower lid and work item or the lower lid, work item, heat insulating wall and internal heater between the hot isostatic pressing station and one of the auxiliary stations; and a lift mechanism for lifting up and down the lower lid and work item or the lower lid, work item, heat insulating wall and heater at the hot isostatic pressing station and each one of the auxiliary stations.
摘要翻译： 一种热等静压按压系统，包括具有高压容器的热等静压按压站，所述高压容器由其顶端封闭的垂直耐压圆筒和可拆卸地装配到耐压圆筒底部的下盖以及内部设置的处理室 具有加热器并由绝热壁包围的机构，以及用于将加压站的气氛气体压力和温度调节到适于对容纳在处理室中的工件进行热等静压的状态的机构; 多个辅助站各自具有开口，用于从其下方接收容纳内部加热器的处理室的隔热壁和工件，用于支撑隔热壁的支撑结构和用于冷却工件的机构 和内部加热器在惰性气体气氛中; 用于在热等静压按压站和辅助站之间传送下盖和工作物品或下盖，工件，隔热墙和内部加热器的托架; 以及一个提升机构，用于在热等静压站和每个辅助站上下下盖和工作物品或下盖，工件，隔热墙和加热器。
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公开(公告)号：US4448747A
公开(公告)日：1984-05-15
申请号：US413836
申请日：1982-09-01
IPC分类号： B22F3/14 , B22F3/15 , C04B35/593 , C04B35/645 , F27B17/00 , B22F3/16
CPC分类号： B30B11/002 , B22F3/15 , C04B35/5935 , C04B35/6455
摘要： A high density sintering method for powder molded products by applying preliminary sintering to powder molded products previously molded into a predetermined shape and then applying hot isostatic press process to the sintered products thereby producing high density sintered product which includes the steps of loading the powder molded products into a movable heating furnace equipped with at least one heating means and having a heat insulating structure, introducing the heating furnace into an atmosphere chamber, applying preliminary sintering to the powder molded products in the heating furnace by the heating means while conditioning the inside of the atmosphere chamber to a vacuum or predetermined gas atmosphere, subsequently removing the heating furnace while maintaining the inside thereof at a high temperature from the atmosphere chamber and directly introducing the furnace into a high pressure vessel, thereafter, applying the hot isostatic press process to the sintered products in the furnace while charging a gas as a pressure medium under pressure into the high pressure vessel and elevating the temperature in the heating furnace by the heating means, thereby producing high density sintered products, and then removing the heating furnace together with the high density sintered products loaded therein out of the high pressure vessel after completion of the hot isostatic press process.
摘要翻译： 一种粉末成型品的高密度烧结方法，其特征在于，将预先烧成的粉末成型体预先成型为规定形状，然后对烧结体进行热等静压加工，制造高密度烧结体，其特征在于， 进入配备有至少一个加热装置并具有隔热结构的可移动加热炉，将加热炉引入气氛室中，通过加热装置对加热炉中的粉末成型产品进行预烧结，同时调节 气氛室进入真空或预定的气体气氛，随后从大气室中保持其内部的高温，同时将加热炉取出并直接将炉子引入高压容器中，然后将热等静压机加工到烧结 产品在 在将加压介质的气体作为压力介质在高压容器内进行加热的同时，通过加热装置升高加热炉内的温度，由此制造高密度烧结产品，然后与高密度烧结产品一起除去加热炉 在热等静压机加工完成后，将其从高压容器中装载出来。
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5.发明授权Method for producing high density sintered silicon nitride (Si.sub.3 N.sub. 4 失效生产高密度烧结氮化硅（Si3N4）的方法
公开(公告)号：US5445776A
公开(公告)日：1995-08-29
申请号：US814806
申请日：1991-12-31
IPC分类号： C04B35/593 , C04B35/58
CPC分类号： C04B35/593 , C04B35/5935
摘要： The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4, above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
摘要翻译： 该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。 在第一步骤中，氮化硅粉末被压制成所需的形状。 通常在常压下第二步骤中预烧结，得到相对密度至少为92％的预烧结体。 在第三步骤中，在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下对预烧结体进行热等静压（HIP）。 由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。
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公开(公告)号：US4505762A
公开(公告)日：1985-03-19
申请号：US276984
申请日：1981-06-24
CPC分类号： H01L39/2409 , Y10S505/815 , Y10S505/918 , Y10S505/919 , Y10T29/49014
摘要： A method of producing compound-type superconducting wires which are dense and free of voids. The method comprises the step of holding a compound-type superconducting wire having voids in an atmosphere of sufficiently high temperature high pressure gas to collapse the voids and weld the collapsed areas, thereby forming a dense, void-free superconducting wire.
摘要翻译： 制造密集且无空隙的复合型超导线的方法。 该方法包括将具有空隙的化合物型超导线保持在足够高温高压气体气氛中的步骤，以使空隙塌缩并焊接塌陷区域，由此形成致密的无空隙的超导线。
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公开(公告)号：US4386970A
公开(公告)日：1983-06-07
申请号：US312967
申请日：1981-10-20
CPC分类号： H01L39/2409 , Y10S505/823 , Y10S505/921 , Y10T29/49014
摘要： The specification describes a method for producing compound-type superconducting wire of excellent mechanical and electrical properties. A green compact is first formed with copper powder and one of two metals which form a superconducting compound through a reaction therebetween. The latter metal is in a very fine hydrogenated form. The green compact is then heated in vacuo so as to dehydrogenate the hydride of the latter metal and sinter the green compact into a sintered mass. Before or after drawing the sintered mass into a wire, it is composited with the other metal of the two metals, thereby forming a composite wire. It is then subjected to a further heat treatment to cause the reaction to occur between the two metals. To improve its properties, it may be held in a high temperature, high pressure gaseous atmosphere to cause plastic deformation to occur. Since the dehydrogenation and annealing are performed in a single step, the overall process has been simplified. Since the latter metal is dispersed uniformly in the form of highly pure and ultra-fine particles in the Cu-matrix of the sintered mass, it can be drawn very smoothly into a wire and the reaction between the two metals can occur easily. The two metals may for example be Nb and Sn or V and Ga.
摘要翻译： 该说明书描述了一种具有优异的机械和电学性能的复合型超导线材的制造方法。 首先用铜粉和两种金属之一通过它们之间的反应形成超导化合物。 后一种金属是非常精细的氢化形式。 然后将生坯压片真空加热，使后者金属的氢化物脱氢，并将生坯压坯烧结成烧结体。 在将烧结体拉成线材之前或之后，将其与两种金属的其它金属复合，从而形成复合线。 然后进行进一步的热处理，以使两者之间发生反应。 为了改善其性能，可以将其保持在高温高压气氛中，引起塑性变形。 由于脱氢和退火是在一个步骤中进行的，所以整个过程已被简化。 由于后者金属在烧结体的Cu基体中以高纯度和超细颗粒的形式均匀分散，因此可以非常平滑地拉伸成线，并且容易发生两种金属之间的反应。 这两种金属可以例如是Nb和Sn或V和Ga。
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8.发明授权Method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4 ) 失效生产高密度烧结氮化硅（Si3N4）的方法
公开(公告)号：US5665291A
公开(公告)日：1997-09-09
申请号：US463273
申请日：1995-06-05
IPC分类号： C04B35/593 , C04B35/584
CPC分类号： C04B35/593 , C04B35/5935
摘要： The specification describes a method for producing high density sintered silicon nitride (Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then pre-sintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing (HIP) in an inert gas atmosphere of 1500.degree.-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
摘要翻译： 该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。 在第一步骤中，氮化硅粉末被压制成所需的形状。 通常在常压下在第二步骤中预烧结，得到相对密度至少为92％的预烧结体。 在第三步骤中，将预烧结体在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下进行热等静压（HIP）。 由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。
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公开(公告)号：US4620839A
公开(公告)日：1986-11-04
申请号：US650534
申请日：1984-09-14
CPC分类号： B30B11/002 , B22F3/15 , B30B15/34 , F27B5/04 , F27B5/14 , Y10T428/30
摘要： A heat insulator for a hot isostatic pressing apparatus including a plurality of non-perforated graphite sheets; a plurality of perforated graphite sheets, each one of the plurality of perforated graphite sheets being sandwiched between and making at least substantially planar contact with, but not being bonded to, adjoining ones of the plurality of non-perforated graphite sheets; and a gas having an extremely low thermal conductivity substantially confined in the perforations in the plurality of perforated graphite sheets.
摘要翻译： 一种用于热等静压装置的隔热件，包括多个非穿孔石墨片; 多个穿孔石墨片，所述多个穿孔石墨片中的每一个夹在所述多个非穿孔石墨片中的相邻的多孔石墨片之间并与其形成至少基本上平面的接触，但不结合到所述多个非穿孔石墨片中。 以及基本上限制在多个穿孔石墨片中的穿孔中的极低导热性的气体。
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10.发明授权Method for producing high density sintered silicon nitride (SI.sub.3 N.sub. 4 失效生产高密度烧结氮化硅（SI3N4）的方法
公开(公告)号：US5603876A
公开(公告)日：1997-02-18
申请号：US251052
申请日：1988-09-26
IPC分类号： C04B35/593 , C04B35/584
CPC分类号： C04B35/593 , C04B35/5935
摘要： The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 -Al.sub.2 O.sub.3 -MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
摘要翻译： 该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。 在第一步骤中，氮化硅粉末被压制成所需的形状。 通常在常压下第二步骤中预烧结，得到相对密度至少为92％的预烧结体。 在第三步骤中，在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下对预烧结体进行热等静压（HIP）。 由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。
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