公开(公告)号：US5504020A

公开(公告)日：1996-04-02

申请号：US307068

申请日：1994-09-16

申请人： Shigeru Aomori ,  Atsushi Yoshinouchi ,  Keiji Tarui ,  Tatsuo Morita

发明人： Shigeru Aomori ,  Atsushi Yoshinouchi ,  Keiji Tarui ,  Tatsuo Morita

IPC分类号： H01L21/266 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/78675 ,  H01L21/2236 ,  H01L21/3003 ,  H01L27/1214 ,  H01L29/66757 ,  H01J2237/31701

摘要： A method for fabricating a thin film transistor includes the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed therebetween; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of the group III or the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1.times.10.sup.19 ions/cm.sup.3 to 1.times.10.sup.20 ions/cm.sup.3.

摘要翻译： 一种制造薄膜晶体管的方法包括以下步骤：在绝缘基板上形成半导体层和栅电极，其间插有栅绝缘膜; 以及通过使用用于形成栅极的栅电极和抗蚀剂掩模中的至少一个来加速元素周期表中第III族元素或第V族元素的氢离子和离子，将杂质元素注入到半导体层的表面中 电极作为掩模，以便同时进行源区和漏区的形成和沟道区的氢化，其中半导体层的沟道区中的氢离子的浓度在1×1019离子/ cm 3至1×1020离子的范围内 / cm3。

公开(公告)号：US20120199822A1

公开(公告)日：2012-08-09

申请号：US13501079

申请日：2010-10-19

申请人： Masakazu Kamura ,  Shigeru Aomori ,  Yasutaka Kuzumoto

发明人： Masakazu Kamura ,  Shigeru Aomori ,  Yasutaka Kuzumoto

IPC分类号： H01L51/10

CPC分类号： H01L51/105 ,  H01L51/0545

摘要： An organic transistor (1) includes: an injection improvement layer (40) between a source electrode (14) and an organic semiconductor layer (16); and an extraction improvement layer (50) between a drain electrode (15) and the organic semiconductor layer (16). An electric dipole moment of a material or molecules of the extraction improvement layer (50) has an absolute value lager than that of the injection improvement layer (40). Accordingly, all carriers in the organic semiconductor, which are injected from the source electrode during operation of the transistor, can be drawn out (extracted) into the drain electrode. This reduce contact resistances. Therefore, provided are the organic transistor that reduces a contact resistance between the organic semiconductor layer and the source electrode and a contact resistance between the organic semiconductor layer and the drain electrode and attains to demonstrate stable operation, and a method for fabricating the organic transistor.

摘要翻译： 有机晶体管（1）包括：在源电极（14）和有机半导体层（16）之间的注入改进层（40）; 以及在漏电极（15）和有机半导体层（16）之间的提取改进层（50）。 提取改善层（50）的材料或分子的电偶极矩的绝对值大于注入改进层（40）的绝对值。 因此，可以将在晶体管工作期间从源电极注入的有机半导体中的所有载流子拉出（提取）到漏电极中。 这降低了接触电阻。 因此，提供了降低有机半导体层与源电极之间的接触电阻的有机晶体管和有机半导体层与漏电极之间的接触电阻，并且实现了稳定的操作，以及制造有机晶体管的方法。

公开(公告)号：US20120146009A1

公开(公告)日：2012-06-14

申请号：US13390925

申请日：2010-08-19

申请人： Tetsuji Itoh ,  Shigeru Aomori

发明人： Tetsuji Itoh ,  Shigeru Aomori

IPC分类号： H01L51/30 ,  H01B1/12 ,  H01L51/48 ,  C07D241/38 ,  H01L51/40 ,  H01L51/46

CPC分类号： C07D241/38 ,  H01L51/0072 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

摘要： A compound of the present invention is represented by the following formula (1): (where: R1 and R2 represent, independently, a substitutable C1 to C20 aliphatic hydrocarbon group; and R3 through R14 represent, independently, one of a hydrogen atom, a halogen atom, a substitutable aliphatic hydrocarbon group, and a substitutable aromatic hydrocarbon group). It is therefore possible to provide a novel compound which can be used as an organic semiconductor material.

摘要翻译： 本发明的化合物由下式（1）表示：（其中：R 1和R 2独立地表示可取代的C 1至C 20脂族烃基; R 3至R 14独立地表示氢原子， 卤原子，可取代的脂族烃基和可取代的芳族烃基）。 因此，可以提供可用作有机半导体材料的新型化合物。

公开(公告)号：US08334528B2

公开(公告)日：2012-12-18

申请号：US12683360

申请日：2010-01-06

申请人： Yasutaka Kuzumoto ,  Shigeru Aomori ,  Masatoshi Kitamura ,  Yasuhiko Arakawa

发明人： Yasutaka Kuzumoto ,  Shigeru Aomori ,  Masatoshi Kitamura ,  Yasuhiko Arakawa

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/105 ,  H01L51/0545

摘要： An organic thin-film transistor of the present invention has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer provided above a substrate, and further has a thiol compound layer composed of a benzenethiol compound and provided on a surface of the source electrode and a thiol compound layer composed of a benzenethiol compound and provided on a surface of the drain electrode. This makes it possible to provide an organic thin-film transistor whose threshold voltage can be selectively controlled without greatly affecting a current characteristic other than the threshold voltage.

摘要翻译： 本发明的有机薄膜晶体管具有设置在基板上方的栅极，栅极绝缘膜，源电极，漏电极和有机半导体层，并且还具有由苯硫醇化合物构成的硫醇化合物层 并且设置在源极电极的表面和由苯硫醇化合物组成的硫醇化合物层并设置在漏电极的表面上。 这使得可以提供可以选择性地控制阈值电压而不会极大影响阈值电压之外的电流特性的有机薄膜晶体管。

公开(公告)号：US20100311238A1

公开(公告)日：2010-12-09

申请号：US12859018

申请日：2010-08-18

申请人： Hiroki Nakamura ,  Masaki Kado ,  Shigeru Aomori

发明人： Hiroki Nakamura ,  Masaki Kado ,  Shigeru Aomori

IPC分类号： H01L21/768

CPC分类号： H01L21/76885 ,  H01L21/76843 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76888 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/458

摘要： A method of forming a copper wiring layer, which includes forming a pattern of copper seed layer on a substrate, and forming a copper wiring pattern on the pattern of copper seed layer by means of electroless plating. At least one component of semiconductor device selected from the group consisting of the gate electrode, the source electrode, the drain electrode, and a wiring connected with at least one of these electrodes is formed by a method comprising forming a pattern of copper seed layer, and forming a copper wiring pattern on the pattern of copper seed layer by means of electroless plating.

摘要翻译： 一种形成铜布线层的方法，其包括在基板上形成铜籽晶层的图案，并通过无电镀在铜籽晶层的图案上形成铜布线图案。 通过包括形成铜籽晶层的图案的方法，形成从由栅电极，源电极，漏电极和与这些电极中的至少一个连接的布线的组中选择的至少一个半导体器件的组件， 并通过无电镀法在铜籽晶层的图案上形成铜布线图案。

公开(公告)号：US20100176387A1

公开(公告)日：2010-07-15

申请号：US12683360

申请日：2010-01-06

申请人： Yasutaka KUZUMOTO ,  Shigeru Aomori ,  Masatoshi Kitamura ,  Yasuhiko Arakawa

发明人： Yasutaka KUZUMOTO ,  Shigeru Aomori ,  Masatoshi Kitamura ,  Yasuhiko Arakawa

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01L51/105 ,  H01L51/0545

摘要： An organic thin-film transistor of the present invention has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer provided above a substrate, and further has a thiol compound layer composed of a benzenethiol compound and provided on a surface of the source electrode and a thiol compound layer composed of a benzenethiol compound and provided on a surface of the drain electrode. This makes it possible to provide an organic thin-film transistor whose threshold voltage can be selectively controlled without greatly affecting a current characteristic other than the threshold voltage.

摘要翻译： 本发明的有机薄膜晶体管具有设置在基板上方的栅极，栅极绝缘膜，源电极，漏电极和有机半导体层，并且还具有由苯硫醇化合物构成的硫醇化合物层 并且设置在源极电极的表面和由苯硫醇化合物组成的硫醇化合物层并设置在漏电极的表面上。 这使得可以提供可以选择性地控制阈值电压而不会极大影响阈值电压之外的电流特性的有机薄膜晶体管。

公开(公告)号：US20070072417A1

公开(公告)日：2007-03-29

申请号：US11531873

申请日：2006-09-14

申请人： Hiroki Nakamura ,  Masaki Kado ,  Shigeru Aomori

发明人： Hiroki Nakamura ,  Masaki Kado ,  Shigeru Aomori

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： A method for forming a wiring structure includes forming a metal layer on a substrate, and annealing the metal layer by irradiating the metal layer with light emitted from at least one flash tube, thereby growing crystalline grains of the metal layer.

摘要翻译： 一种形成布线结构的方法包括：在基板上形成金属层，并且通过用从至少一个闪光管发射的光照射金属层来对金属层进行退火，从而生长金属层的晶粒。

公开(公告)号：US5625474A

公开(公告)日：1997-04-29

申请号：US658891

申请日：1996-05-31

申请人： Shigeru Aomori ,  Atsushi Tanaka ,  Seiichi Mitsui

发明人： Shigeru Aomori ,  Atsushi Tanaka ,  Seiichi Mitsui

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1347 ,  G02F1/133

CPC分类号： G02F1/1347 ,  G02F1/13475

摘要： A full-color liquid crystal display device is provided which includes: a first substrate formed with a plurality of liquid crystal driving active elements; and first, second and third liquid crystal cells stacked one on another on an inter-layer film formed on the first substrate; the first liquid crystal cell including a first liquid crystal driving electrode connected to a first liquid crystal driving active element formed on the first substrate; the second liquid crystal cell formed on the second substrate and including a second liquid crystal driving electrode connected to a second liquid crystal driving active element formed on the first substrate via a lower stereo-interconnection extending through the first liquid crystal cell; the third liquid crystal cell formed on the third substrate and including a third liquid crystal driving electrode connected to a third liquid crystal driving active element formed on the first substrate via another lower stereo-interconnection extending through the first liquid crystal cell and an upper stereo-interconnection extending through the second liquid crystal cell.

摘要翻译： 提供一种全色液晶显示装置，其包括：形成有多个液晶驱动有源元件的第一基板; 以及在形成在第一基板上的层间膜上层叠的第一，第二和第三液晶单元; 所述第一液晶单元包括与形成在所述第一基板上的第一液晶驱动有源元件连接的第一液晶驱动电极; 所述第二液晶单元形成在所述第二基板上，并且包括通过延伸穿过所述第一液晶单元的下立体互连而连接到形成在所述第一基板上的第二液晶驱动有源元件的第二液晶驱动电极; 所述第三液晶单元形成在所述第三基板上，并且包括通过经由所述第一液晶单元延伸的另一下立体互连而连接到形成在所述第一基板上的第三液晶驱动有源元件的第三液晶驱动电极， 互连延伸穿过第二液晶单元。

公开(公告)号：US20130234128A1

公开(公告)日：2013-09-12

申请号：US13885680

申请日：2011-11-17

申请人： Shigeru Aomori

发明人： Shigeru Aomori

IPC分类号： H01L27/32

CPC分类号： H01L27/32 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558 ,  H05B33/10

摘要： An object of the present invention is to facilitate reduction in channel length and increase in channel width in an organic semiconductor device and to improve yield. According to an embodiment of the present invention, an organic semiconductor device includes a laminate provided in a first region of a substrate and including a first electrode, a first organic semiconductor film, and a second electrode which are laminated with each other, the first organic semiconductor film being placed between the first electrode and the second electrode; a first wiring portion provided in a second region adjacent to a portion of the periphery of the first region so as to be electrically connected to the first electrode; a second wiring portion provided in the second region so as to be electrically connected to the second electrode; a gate electrode which surrounds a portion of the periphery of the first region; and a gate insulating film provided at least between the laminate and the gate electrode.

摘要翻译： 本发明的一个目的是有助于减少有机半导体器件中的沟道长度和沟道宽度的增加并提高产量。 根据本发明的实施例，有机半导体器件包括设置在基板的第一区域中并且包括彼此层叠的第一电极，第一有机半导体膜和第二电极的层压体的第一有机层 半导体膜被放置在第一电极和第二电极之间; 第一布线部分，设置在与所述第一区域的周边的一部分相邻的第二区域中，以便电连接到所述第一电极; 第二布线部，设置在第二区域中，以与第二电极电连接; 围绕所述第一区域的周边的一部分的栅电极; 以及至少设置在层叠体和栅电极之间的栅极绝缘膜。

公开(公告)号：US20100237337A1

公开(公告)日：2010-09-23

申请号：US12680413

申请日：2008-09-19

申请人： Masakazu Kamura ,  Shigeru Aomori ,  Yasutaka Kuzumoto

发明人： Masakazu Kamura ,  Shigeru Aomori ,  Yasutaka Kuzumoto

IPC分类号： H01L51/30 ,  H01L51/10 ,  H01L51/40

CPC分类号： H01L51/052 ,  H01L51/0533 ,  H01L51/0545

摘要： An organic transistor comprising:at least a gate electrode and a gate insulating layer formed on the gate electrode,the gate insulating layer including, on a surface of the gate electrode, a stacked molecular film composed ofa first organic molecular layer binding in a direction substantially perpendicular to the surface of the gate electrode through a first covalent bond anda second organic molecular layer binding to an unreacted end of the first organic molecular layer through a second covalent bond, whereinthe second covalent bond and another second covalent bond adjacent to each other form a hydrogen bond in a direction of a surface perpendicular to a major axis direction of the stacked molecule.

摘要翻译： 一种有机晶体管，包括：至少栅电极和栅极绝缘层，形成在所述栅电极上，所述栅极绝缘层包括在所述栅电极的表面上的层叠分子膜，所述层叠分子膜由在第一有机分子层 通过第一共价键基本上垂直于栅电极的表面，以及通过第二共价键与第一有机分子层的未反应端结合的第二有机分子层，其中第二共价键和与每个共价键相邻的另一个第二共价键 另一个在垂直于堆叠分子的长轴方向的表面的方向上形成氢键。