公开(公告)号：US4377765A

公开(公告)日：1983-03-22

申请号：US240045

申请日：1981-03-03

申请人： Shigeru Kogure ,  Eishi Momosaki ,  Minoru Inoue

发明人： Shigeru Kogure ,  Eishi Momosaki ,  Minoru Inoue

IPC分类号： H03H9/215 ,  H01L41/08

CPC分类号： H03H9/215 ,  Y10T29/42

摘要： A mode coupled tuning fork type quartz crystal vibrator utilizing two different vibrational modes is provided. The vibrator includes at least one electrode on each tuning fork arm for adjusting the resonant frequency of the main vibration and an electrode for adjusting the frequency-temperature characteristic of the vibrator. The main vibration is in the flexural mode (F.sub.1) and the sub-vibration is in the torsional mode (T.sub.0). The resonant frequency of the first overtone in the flextural mode is designated by f.sub.F and the resonant frequency of the fundamental vibration in the torsional mode is denoted by f.sub.T. The difference between f.sub.F and f.sub.T defined as .DELTA.f=f.sub.F -f.sub.T determines the frequency-temperature characteristics of the mode coupled vibrator.The electrodes for adjusting f.sub.F are substantially triangular in shape and the electrodes for adjusting f.sub.T are substantially rectangular in shape. These electrodes are disposed at positions near the top of each tuning fork arm and on both principal surfaces of the vibrators. The resonant frequencies are adjusted by removing a portion of electrode material or adding a strip of metal to the electrode. Preselected oscillation frequency and frequency-temperature characteristics in the form of a cubic curve at ambient temperatures are obtained by first adjusting .DELTA.f to a preselected value .DELTA.f.sub.O and then adjusting f.sub.F to a preselected value f.sub.F0 at the same time maintaining .DELTA.f at the value .DELTA.f.sub.0.

摘要翻译： 提供了利用两种不同振动模式的模式耦合音叉型石英振子。 振子包括用于调节主振动的谐振频率的每个音叉臂上的至少一个电极和用于调节振动器的频率 - 温度特性的电极。 主振动处于弯曲模式（F1），副振动处于扭转模式（T0）。 弯曲模式中第一个泛音的谐振频率由fF表示，扭转模式下的基波振动的谐振频率由fT表示。 定义为DELTA f = fF-fT的fF和fT之间的差异决定了模式耦合振动器的频率 - 温度特性。 用于调节fF的电极的形状基本上是三角形，并且用于调节fT的电极基本上是矩形的。 这些电极设置在靠近每个音叉臂顶部的位置和振动器的两个主表面上。 通过去除电极材料的一部分或向电极添加金属条来调节谐振频率。 通过首先将DELTA f调整为预选值DELTA fO，然后将fF调整到预选值fF0，同时将DELTA f保持在该值，从而获得环境温度下三次曲线形式的预选振荡频率和频率 - 温度特性 DELTA f0。

公开(公告)号：US4320320A

公开(公告)日：1982-03-16

申请号：US42732

申请日：1979-05-29

申请人： Eishi Momosaki ,  Shigeru Kogure ,  Minoru Inoue

发明人： Eishi Momosaki ,  Shigeru Kogure ,  Minoru Inoue

IPC分类号： H03H3/04 ,  H03H9/215 ,  H01L41/08

CPC分类号： H03H3/04 ,  H03H9/215

摘要： Cutting a quartz tuning fork crystal vibrator at a preferred angle and with a thickness which establishes a close coupled relationship between the flexural and torsional modes of vibration of the arms or tines produces a vibrator having a highly favorable cubic frequency temperature characteristic at predetermined frequencies. Weight added to the ends of the vibrating tines reduces the frequency of both flexural and torsional vibration, whereas weight added at nodal points in the flexural vibration primarily reduces only the torsional vibrational mode. Accordingly, a wide range of frequency adjustments is possible. Deviations from the desired crystal operating frequency due to manufacturing variances are adjustable by sequential weight modifications while the desirable cubic temperature characteristic is retained. High accuracy over a wide temperature range permits operation in oscillator circuits at relatively low frequencies and with attendant low power consumption. Close coupling between vibrational modes occurs when the difference between the flexural and torsional frequencies is .ltoreq.0.15 of the flexural frequency. The principles for dimensioning the crystal, and adjusting thickness and weight, are applicable to both fundamental and overtone frequencies.

摘要翻译： 以优选的角度切割石英音叉晶体振子，并且具有在臂或尖的振动的弯曲和扭转模式之间建立紧密耦合关系的厚度产生在预定频率下具有非常有利的立方频率温度特性的振动器。 添加到振动尖端的重量减少了弯曲和扭转振动的频率，而在弯曲振动中的节点处的加权主要仅减小扭转振动模式。 因此，可以进行宽范围的频率调整。 由于制造差异而与期望的晶体工作频率的偏差可通过连续重量修改来调整，而保留理想的立方体温度特性。 在宽温度范围内的高精度允许振荡器电路在较低频率下工作，并具有低功耗。 当弯曲和扭转频率之间的差值为弯曲频率的0.15％时，发生振动模式之间的紧密耦合。 晶体尺寸和调整厚度和重量的原理适用于基波和泛音频率。

公开(公告)号：US4356425A

公开(公告)日：1982-10-26

申请号：US122870

申请日：1980-02-20

申请人： Shigeru Kogure ,  Eishi Momosaki ,  Minoru Inoue

发明人： Shigeru Kogure ,  Eishi Momosaki ,  Minoru Inoue

IPC分类号： G04F5/06 ,  H03H9/13 ,  H03H9/19 ,  H03H9/215 ,  H01L41/08

CPC分类号： H03H9/215 ,  G04F5/063

摘要： A tuning fork type quartz crystal vibrator has electrodes formed on its surfaces with the electrodes being divided into separated portions along the length of the tuning fork arms such that opposite electric fields and charges are juxtaposed in the same arm. Dividing the electrode at a location along the tuning fork arms where strains induced during vibration reverse direction, enhances the ability to induce vibrations. A low resonant resistance and high capacity ratio are provided for an overtone frequency of flexual vibrations.

摘要翻译： 音叉型石英晶体振子具有形成在其表面上的电极，电极沿着音叉臂的长度分成分离的部分，使得相反的电场和电荷并置在同一个臂中。 在振动反向引起的应变下，沿着音叉臂的位置分割电极，增强了引起振动的能力。 提供低谐振电阻和高容量比，用于柔性振动的泛音频率。

公开(公告)号：US08088686B2

公开(公告)日：2012-01-03

申请号：US12226422

申请日：2007-04-18

申请人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

发明人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

IPC分类号： H01L21/4763

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3105

摘要： The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.

摘要翻译： 本发明提供一种补偿绝缘膜的劣化的方法，其在通过等离子体处理劣化的绝缘膜的补救处理中，不会在诸如铜布线层的布线材料上留下残留的补救剂，可以使用 干法，对大批量生产具有优异的适用性。 通过等离子体处理劣化的绝缘膜与由具有至少一个硝基和羰基的分子结构的化合物组成的补救剂与烃基和氢中的至少一种接触 组。

公开(公告)号：US20090099384A1

公开(公告)日：2009-04-16

申请号：US12226422

申请日：2007-04-18

申请人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

发明人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

IPC分类号： C07C69/96 ,  C07C205/02 ,  C07C49/12 ,  C07C49/08 ,  C07C49/10 ,  C07C49/203 ,  C07C49/14 ,  C07C47/06 ,  C07C53/12

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3105

摘要： The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.

摘要翻译： 本发明提供一种补偿绝缘膜的劣化的方法，其在通过等离子体处理劣化的绝缘膜的补救处理中，不会在诸如铜布线层的布线材料上留下残留的补救剂，可以使用 干法，对大批量生产具有很好的适用性。 通过等离子体处理劣化的绝缘膜与由具有至少一个硝基和羰基的分子结构的化合物组成的补救剂与烃基和氢中的至少一种接触 组。

公开(公告)号：US06303229B2

公开(公告)日：2001-10-16

申请号：US09445350

申请日：1999-12-08

申请人： Koichi Takahama ,  Minoru Inoue ,  Junko Ikenaga ,  Shoichi Nakamoto

发明人： Koichi Takahama ,  Minoru Inoue ,  Junko Ikenaga ,  Shoichi Nakamoto

IPC分类号： B32B904

CPC分类号： C09D183/02 ,  Y10T428/31663

摘要： The present invention provides a process for forming a hydrophilic inorganic coated film on a surface of a base material, the process comprising the steps of: (1) preparing an inorganic coating composition which contains, as a major component, a silicone resin obtained by hydrolyzing and condensation-polymerizing only the tetra-functional alkoxysilane represented by the formula: Si(OR)4 [wherein R represents an alkyl group having carbon atoms up to and including 7 or an aryl group], and has a total solid content of not more than 5% by weight; (2) applying the inorganic coating composition to a surface of the base material to form a coated layer; and (3) drying and curing the coated layer to form a cured coated film having a thickness of 0.01 to 0.5 &mgr;m. The hydrophilic inorganic coated film formed by the process of the present invention is highly hydrophilic just after the film is formed, even in the case that it is not irradiated with ultraviolet rays.

摘要翻译： 本发明提供了在基材表面形成亲水性无机涂膜的方法，该方法包括以下步骤：（1）制备一种无机涂料组合物，其中以无机涂料组合物为主要成分， 并且仅使由式（Si）（OR）4表示的四官能烷氧基硅烷进行缩聚：[其中，R表示碳原子数为7以上的烷基或芳基]，总固体成分不多 超过5％重量; （2）将无机涂料组合物涂布在基材的表面上以形成涂层; 和（3）干燥和固化涂层以形成厚度为0.01至0.5μm的固化涂膜。 通过本发明的方法形成的亲水性无机涂膜即使在没有用紫外线照射的情况下，在形成膜之后即具有高亲水性。

公开(公告)号：USD420028S

公开(公告)日：2000-02-01

申请号：US096705

申请日：1998-11-18

申请人： Yuki Wani ,  Toshinobu Miyazawa ,  Tomoyuki Kawamura ,  Keiichi Iizuka ,  Minoru Inoue

设计人： Yuki Wani ,  Toshinobu Miyazawa ,  Tomoyuki Kawamura ,  Keiichi Iizuka ,  Minoru Inoue

公开(公告)号：US5902851A

公开(公告)日：1999-05-11

申请号：US840167

申请日：1997-04-14

申请人： Takeyuki Yamaki ,  Akiharu Gotoh ,  Minoru Inoue

发明人： Takeyuki Yamaki ,  Akiharu Gotoh ,  Minoru Inoue

IPC分类号： C09D4/06 ,  C09D5/16 ,  C09D183/04 ,  C09D133/064

CPC分类号： C09D183/04 ,  C09D4/06 ,  C09D5/1675 ,  C09D5/1687

摘要： The present invention provides a resinous composition for foul releasing coat adhesion containing a silica dispersed oligomer solution of an organosilane, an acrylic resin, a straight-chain polysiloxane diol, a silanol group-containing polyorganosiloxane and a curing catalyst, and an article coated therewith.

摘要翻译： 本发明提供一种含有有机硅烷，丙烯酸树脂，直链聚硅氧烷二醇，含硅烷醇基聚有机硅氧烷和固化催化剂的二氧化硅分散低聚物溶液及其涂布物品的防污涂层粘合性树脂组合物。

公开(公告)号：US20090130860A1

公开(公告)日：2009-05-21

申请号：US12216596

申请日：2008-07-08

申请人： Hironobu Miya ,  Eisuke Nishitani ,  Yuji Takebayashi ,  Masanori Sakai ,  Hirohisa Yamazaki ,  Toshinori Shibata ,  Minoru Inoue

发明人： Hironobu Miya ,  Eisuke Nishitani ,  Yuji Takebayashi ,  Masanori Sakai ,  Hirohisa Yamazaki ,  Toshinori Shibata ,  Minoru Inoue

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4405 ,  H01L21/3141 ,  H01L21/31645

摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

摘要翻译： 为了除去沉积在处理室内部的高介电常数膜的沉积物，通过使用仅通过加热活化的清洗气体。 该方法包括以下步骤：将衬底或多个衬底装载到处理室中; 进行处理，通过向处理室供给处理气体，将高介电常数膜沉积在基板上; 从处理室的内部卸载经处理的基板; 以及通过向所述处理室中供给卤化物气体和氧气基气体来清洁所述处理室的内部，以及去除包括沉积在所述处理室内部的所述高介电常数膜的沉积物，以及在所述处理室的内部清洁步骤 处理室中的卤化物气体和氧气基气体中的氧基气体的浓度设定为小于7％。

公开(公告)号：US20070215402A1

公开(公告)日：2007-09-20

申请号：US11709121

申请日：2007-02-22

申请人： Shin Sasaki ,  Minoru Inoue ,  Takahiro Aonuma ,  Hiroaki Fujii

发明人： Shin Sasaki ,  Minoru Inoue ,  Takahiro Aonuma ,  Hiroaki Fujii

IPC分类号： B60K5/00 ,  B60J7/00

CPC分类号： B62D25/088 ,  B62D21/152 ,  B62D29/008

摘要： A bridge-shaped frame member is disposed on a front side frame in front of a suspension tower so as to extend vertically and stride over a No. 4 mount. Accordingly, there can be provided a vehicle front body structure that can attain a proper energy absorption of the front side frame with its axial compression can be attained at a vehicle crash.

摘要翻译： 桥式框架构件设置在悬架的前方的前侧框架上，以便垂直延伸并跨越4号底座。 因此，可以提供一种可以在车辆碰撞时获得能够获得前侧框架的适当能量吸收并且其轴向压缩的车辆前体结构。