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    Manufacturing method of silicon wafer
    1.
    发明授权
    Manufacturing method of silicon wafer 有权
    硅晶片的制造方法

    公开(公告)号：US07563319B2

    公开(公告)日：2009-07-21

    申请号：US10524778

    申请日：2003-12-19

    申请人： Shigeru Umeno ,  Masataka Hourai ,  Masakazu Sano ,  Shinichiro Miki

    发明人： Shigeru Umeno ,  Masataka Hourai ,  Masakazu Sano ,  Shinichiro Miki

    IPC分类号： H01L21/324

    CPC分类号： H01L21/2605 ,  C30B29/06 ,  C30B33/005 ,  H01L21/261 ,  H01L21/3225 ,  H01L21/76254 ,  Y10S117/916

    摘要： An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula: [Oi]≦2.123×1021exp(−1.035/k(T+273)), where, T is a temperature of the heat treatment, and [Oi] (atmos/cm3) is an interstitial oxygen concentration.

    摘要翻译： 在氧化气氛中对有源层侧硅晶片进行热处理，从而在其中形成掩埋氧化膜。 然后将有源层侧硅晶片与所述掩埋氧化物膜接合在支撑侧晶片上，由此制造SOI晶片。 所述氧化热处理在满足以下公式的条件下进行：<？in-line-formula description =“In-line formula”end =“lead”？> [Oi] <= 2.123×1016exp（-1.035 / k T + 273）），<？in-line-formula description =“In-line Formulas”end =“tail”？>其中，T是热处理的温度，[Oi（atmos / cm3） 间质氧浓度。

    Manufacturing method of silicon wafer
    2.
    发明申请
    Manufacturing method of silicon wafer 有权
    硅晶片的制造方法

    公开(公告)号：US20050229842A1

    公开(公告)日：2005-10-20

    申请号：US10524778

    申请日：2003-12-19

    申请人： Shigeru Umeno ,  Masakata Hourai ,  Masakazu Sano ,  Shinichiro Miki

    发明人： Shigeru Umeno ,  Masakata Hourai ,  Masakazu Sano ,  Shinichiro Miki

    IPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/26 ,  H01L21/322 ,  H01L21/324 ,  H01L21/762

    CPC分类号： H01L21/2605 ,  C30B29/06 ,  C30B33/005 ,  H01L21/261 ,  H01L21/3225 ,  H01L21/76254 ,  Y10S117/916

    摘要： An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula: [Oi]≦2.123×1021exp(−1.035/k(T+273)), where, T is a temperature of the heat treatment, and [Oi] (atmos/cm3) is an interstitial oxygen concentration.

    摘要翻译： 在氧化气氛中对有源层侧硅晶片进行热处理，从而在其中形成掩埋氧化膜。 然后将有源层侧硅晶片与所述掩埋氧化物膜接合在支撑侧晶片上，由此制造SOI晶片。 所述氧化热处理在满足以下公式的条件下进行：<？in-line-formula description =“In-line formula”end =“lead”？> [Oi] <= 2.123×10 21 SUP> exp（-1.035 / k（T + 273）），<？in-line-formula description =“In-line Formulas”end =“tail”？>其中，T是热处理的温度， （atmos / cm 3）是间隙氧浓度。

    Microwave oven in which rush current to high voltage transformer is suppressed
    3.
    发明授权
    Microwave oven in which rush current to high voltage transformer is suppressed 失效

    公开(公告)号：US06515265B2

    公开(公告)日：2003-02-04

    申请号：US09938730

    申请日：2001-08-27

    申请人： Masakazu Sano

    发明人： Masakazu Sano

    IPC分类号： H05B668

    CPC分类号： H05B6/666 ,  H05B6/662

    摘要： When power supply to a high voltage transformer starts, the phase &thgr; of the voltage of an AC power source when power supply to the high voltage transformer is stopped last time is referred to. In accordance with the value of the phase &thgr;, the phase of the voltage of the AC power source when power supply to the high voltage transformer starts is determined, so that the peak value of the rush current in the high voltage transformer is minimized.

    TABLE PARTITIONING AND STORAGE IN A DATABASE
    4.
    发明申请
    TABLE PARTITIONING AND STORAGE IN A DATABASE 有权
    数据库中的表分区和存储

    公开(公告)号：US20090300040A1

    公开(公告)日：2009-12-03

    申请号：US12473322

    申请日：2009-05-28

    申请人： Soh Kaijima ,  Masahiro Okawa ,  Akira Sakaguchi ,  Masakazu Sano

    发明人： Soh Kaijima ,  Masahiro Okawa ,  Akira Sakaguchi ,  Masakazu Sano

    IPC分类号： G06F7/00 ,  G06F12/00

    CPC分类号： G06F17/30492 ,  G06F17/30306

    摘要： To provide efficient table partitioning, a database is described for distributively locating a plurality of sub-tables resulting from partitioning of a table in a database. This includes an acquiring section that monitors access occurrences to each of the sub-tables to acquire a history of access occurrences. Also a deciding section decides a table storage area in which a sub-table is to be located, based on the history of access occurrences to each of the sub-tables.

    摘要翻译： 为了提供有效的表分区，描述了一种数据库，用于分布式定位由数据库中的表的分区产生的多个子表。 这包括一个获取部分，监视每个子表的访问事件，以获取访问事件的历史记录。 另外，决定部基于各个子表的访问历史来决定其中要存在子表的表存储区。

    Semiconductor silicon wafer, semiconductor silicon wafer fabrication method and annealing equipment
    5.
    发明授权
    Semiconductor silicon wafer, semiconductor silicon wafer fabrication method and annealing equipment 有权
    半导体硅晶片，半导体硅晶片制造方法及退火设备

    公开(公告)号：US6129787A

    公开(公告)日：2000-10-10

    申请号：US212389

    申请日：1998-12-16

    申请人： Naoshi Adachi ,  Masakazu Sano ,  Shinsuke Sadamitsu ,  Tsuyoshi Kubota

    发明人： Naoshi Adachi ,  Masakazu Sano ,  Shinsuke Sadamitsu ,  Tsuyoshi Kubota

    IPC分类号： H01L21/31 ,  C30B33/02 ,  H01L21/02 ,  H01L21/316 ,  H01L21/322 ,  H01L21/324 ,  C30B25/02

    CPC分类号： H01L21/3225

    摘要： An object of the present invention is to provide a single-crystal silicon wafer where octahedral voids of Grown-in defects, which are the generation source of COP on the surface and COP at several .mu.m depth of the surface layer of the single-crystal silicon wafer grown by the CZ method, are effectively eliminated, and a fabrication method of this wafer, where oxygen near the surface is out-diffused by annealing in a hydrogen and/or inactive gas ambient and oxide film on the inner walls of the octahedral voids near the surface are removed by the created unsaturated oxygen area, then oxidation annealing is performed in an oxygen ambient or mixed gas ambient of oxygen and inactive gas, so that interstitial silicon atoms are forcibly injected to completely eliminate the octahedral voids near the surface, and at the same time an IG layer is created in the bulk of the wafer.

    摘要翻译： 本发明的目的是提供一种单晶硅晶片，其中，作为表面上的COP的生成源的生长缺陷的八面体空隙和单晶表面层的几μm深度的COP 通过CZ方法生长的硅晶片被有效地消除，并且该晶片的制造方法，其中表面附近的氧气在氢气和/或非活性气体环境中退火并在八面体内壁上的氧化膜扩散 通过产生的不饱和氧区域去除表面附近的空隙，然后在氧环境或氧气和惰性气体的混合气体环境中进行氧化退火，使得强制注入间隙硅原子以完全消除表面附近的八面体空隙， 并且同时在晶片的大部分中产生IG层。

    Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants
    7.
    发明授权
    Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants 失效
    在氢气氛中退火半导体晶片以解吸表面污染物的方法

    公开(公告)号：US5508207A

    公开(公告)日：1996-04-16

    申请号：US199170

    申请日：1994-04-26

    申请人： Masataka Horai ,  Naoshi Adachi ,  Hideshi Nishikawa ,  Masakazu Sano

    发明人： Masataka Horai ,  Naoshi Adachi ,  Hideshi Nishikawa ,  Masakazu Sano

    IPC分类号： H01L21/02 ,  H01L21/205 ,  H01L21/30 ,  H01L21/322 ,  H01L21/324 ,  H01L21/306

    CPC分类号： H01L21/3003 ,  H01L21/3221 ,  Y10S117/906 ,  Y10S148/003 ,  Y10S148/022 ,  Y10S148/024 ,  Y10S438/909

    摘要： The present invention provides a method of manufacturing a semiconductor wafer whereby (1) deterioration of a micro-roughness in a low temperature range in hydrogen atmospheric treatment and increase of resistivity due to outward diffusion of an electrically active impurity in a high temperature range are prevented; (2) in the heat treatment in a hydrogen gas atmosphere, the concentration of gas molecules in the atmosphere, such as water, oxygen and the like, are brought to 5 ppm or less in water molecule conversion; and a reaction is suppressed in which a substrate surface is oxidized unequally and the micro-roughness deteriorates; and (3) the same kind of impurity as the electrically active impurity contained in a Si substrate is mixed into the atmosphere and the outward diffusion of the impurity in the vicinity of the Si substrate surface is prevented to prevent variation of the resistivity.

    摘要翻译： PCT No.PCT / JP93 / 00865 Sec。 371日期1994年04月26日 102（e）日期1994年4月26日PCT提交1993年6月25日PCT公布。 出版物WO94 / 00872 日本1994年1月6日。本发明提供一种制造半导体晶片的方法，其中（1）在大气氢处理中的低温范围内的微粗糙度的劣化以及由于电活性杂质的向外扩散引起的电阻率的增加 在高温范围内被防止; （2）在氢气气氛中的热处理中，水分子等氧化物等气氛中的气体分子的浓度在水分子转化率为5ppm以下。 并且抑制基板表面不均匀氧化并且微粗糙度劣化的反应; 和（3）将与Si衬底中含有的电活性杂质相同的杂质混入大气中，并且防止杂质在Si衬底表面附近的向外扩散以防止电阻率的变化。

    Controlling mirroring of tables based on access prediction
    9.
    发明授权
    Controlling mirroring of tables based on access prediction 有权
    基于访问预测控制表的镜像

    公开(公告)号：US09424316B2

    公开(公告)日：2016-08-23

    申请号：US13312194

    申请日：2011-12-06

    申请人： Soh Kaijima ,  Katsuyoshi Katori ,  Seiji Minami ,  Masakazu Sano

    发明人： Soh Kaijima ,  Katsuyoshi Katori ,  Seiji Minami ,  Masakazu Sano

    IPC分类号： G06F17/30 ,  G06F11/20

    CPC分类号： G06F17/30492 ,  G06F11/1451 ,  G06F11/2056 ,  G06F11/2094 ,  G06F17/30519 ,  G06F17/30575 ,  G06F2201/80

    摘要： A system for managing a plurality of storage devices that are configured to store a database. The system includes an access instruction acquiring unit configured for acquiring an access instruction to access the database. The system also includes a predicting unit configured for predicting a table to be accessed in response to the acquired access instruction. The system further includes a relocation unit configured for mirroring the table predicted by the predicting unit, the mirroring between the plurality of storage devices.

    摘要翻译： 一种用于管理被配置为存储数据库的多个存储设备的系统。 该系统包括访问指令获取单元，被配置为获取访问数据库的访问指令。 该系统还包括：预测单元，被配置为响应于获取的访问指令来预测要访问的表。 该系统还包括：重定位单元，被配置为镜像由预测单元预测的表，多个存储设备之间的镜像。

    CONTROLLING MIRRORING OF TABLES BASED ON ACCESS PREDICTION
    10.
    发明申请
    CONTROLLING MIRRORING OF TABLES BASED ON ACCESS PREDICTION 有权
    基于访问预测控制表格的映射

    公开(公告)号：US20120166395A1

    公开(公告)日：2012-06-28

    申请号：US13312194

    申请日：2011-12-06

    申请人： Soh Kaijima ,  Katsuyoshi Katori ,  Seiji Minami ,  Masakazu Sano

    发明人： Soh Kaijima ,  Katsuyoshi Katori ,  Seiji Minami ,  Masakazu Sano

    IPC分类号： G06F7/00

    CPC分类号： G06F17/30492 ,  G06F11/1451 ,  G06F11/2056 ,  G06F11/2094 ,  G06F17/30519 ,  G06F17/30575 ,  G06F2201/80

    摘要： A system for managing a plurality of storage devices that are configured to store a database. The system includes an access instruction acquiring unit configured for acquiring an access instruction to access the database. The system also includes a predicting unit configured for predicting a table to be accessed in response to the acquired access instruction. The system further includes a relocation unit configured for mirroring the table predicted by the predicting unit, the mirroring between the plurality of storage devices.

    摘要翻译： 一种用于管理被配置为存储数据库的多个存储设备的系统。 该系统包括访问指令获取单元，被配置为获取访问数据库的访问指令。 该系统还包括：预测单元，被配置为响应于获取的访问指令来预测要访问的表。 该系统还包括：重定位单元，被配置为镜像由预测单元预测的表，多个存储设备之间的镜像。