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    X-RAY SPECTROMETER AND CHEMICAL STATE ANALYSIS METHOD USING THE SAME
    1.
    发明申请
    X-RAY SPECTROMETER AND CHEMICAL STATE ANALYSIS METHOD USING THE SAME 审中-公开

    公开(公告)号：US20200225173A1

    公开(公告)日：2020-07-16

    申请号：US16651115

    申请日：2018-07-25

    Applicant: SHIMADZU CORPORATION

    Inventor： Kenji SATO ,  Tetsuya YONEDA ,  Susumu ADACHI ,  Satoshi TOKUDA

    IPC: G01N23/207 ,  G01N23/2209

    Abstract: An X-ray spectrometer includes: an excitation source that irradiates a predetermined irradiation region on a surface of a sample with an excitation ray generating a characteristic X-ray; a flat plate analyzing crystal facing the irradiation region; a slit provided between the irradiation region and the analyzing crystal, the slit being parallel to a predetermined crystal plane of the analyzing crystal; a linear sensor including linear detection elements having a length in a direction parallel to the slit are arranged in a direction perpendicular to the slit; and an energy calibration unit that measures two characteristic X-rays in which energy is known by irradiating a surface of a standard sample generating the two characteristic X-rays with the excitation ray from the excitation source, and calibrates the energy of the characteristic X-ray detected by each detection element of the X-ray linear sensor based on the measured energies of the two characteristic X-rays.

    X-RAY PHASE IMAGING APPARATUS
    2.
    发明申请
    X-RAY PHASE IMAGING APPARATUS 审中-公开

    公开(公告)号：US20200337659A1

    公开(公告)日：2020-10-29

    申请号：US16834883

    申请日：2020-03-30

    Applicant: Shimadzu Corporation

    Inventor： Satoshi SANO ,  Koichi TANABE ,  Yukihisa WADA ,  Satoshi TOKUDA ,  Akira HORIBA ,  Naoki MORIMOTO

    IPC: A61B6/00 ,  G01N23/20

    Abstract: In this X-ray phase imaging apparatus, at least one of a plurality of gratings is composed of a plurality of grating portions arranged along a third direction perpendicular to a first direction along which a subject or an imaging system is moved by a moving mechanism and a second direction along which an X-ray source, a detection unit, and a plurality of grating portions are arranged. The plurality of grating portions are arranged such that adjacent grating portions overlap each other when viewed in the first direction.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DETECTOR, METHODS FOR MANUFACTURING SAME, AND SEMICONDUCTOR CHIP OR SUBSTRATE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DETECTOR, METHODS FOR MANUFACTURING SAME, AND SEMICONDUCTOR CHIP OR SUBSTRATE 审中-公开

    公开(公告)号：US20180331060A1

    公开(公告)日：2018-11-15

    申请号：US15775538

    申请日：2015-11-12

    Applicant: Shimadzu Corporation ,  TOHOKU-MICROTEC CO., LTD.

    Inventor： Hiroyuki KISHIHARA ,  Toshinori YOSHIMUTA ,  Satoshi TOKUDA ,  Yukihisa WADA ,  Makoto MOTOYOSHI

    IPC: H01L23/00 ,  H01L27/146

    Abstract: In a method for manufacturing a radiation detector, counter pixel electrodes 33 are formed on a counter substrate 2 at positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodes 34 are further formed on the counter pixel electrodes 33. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes 33. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes 34. The bump electrodes 34 are cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes. The decrease in the bonding area also makes it possible to correspondingly improve the reproducibility of forming the diameter of the electrodes, and make reliable connection possible.

    DISPERSIVE ELEMENT
    4.
    发明申请
    DISPERSIVE ELEMENT 有权

    公开(公告)号：US20220208408A1

    公开(公告)日：2022-06-30

    申请号：US17610640

    申请日：2019-07-18

    Applicant: SHIMADZU CORPORATION

    Inventor： Takuro IZUMI ,  Satoshi TOKUDA ,  Susumu ADACHI ,  Tetsuya YONEDA

    IPC: G21K1/06

    Abstract: A dispersive element is provided with a dispersive crystal for spectrally dispersing X-rays, a first support layer supporting the dispersive crystal, and a second support layer supporting the first support layer. The first support layer is greater in a thermal expansion coefficient than the dispersive crystal. The second support layer is smaller in a thermal expansion coefficient than the first support layer and is greater in rigidity than the first support layer.

    STRUCTURE AND FILM FORMATION METHOD
    9.
    发明申请
    STRUCTURE AND FILM FORMATION METHOD 审中-公开
    结构和电影形成方法

    公开(公告)号：US20170067142A1

    公开(公告)日：2017-03-09

    申请号：US15115563

    申请日：2015-01-20

    Applicant: Shimadzu Corporation

    Inventor： Akina ICHIOKA ,  Toshinori YOSHIMUTA ,  Satoshi TOKUDA ,  Daisuke IMAI ,  Satoru OZAKI ,  Yuu TOKUTAKE

    IPC: C23C14/02 ,  G02B5/08 ,  C23C16/505 ,  C23C14/20 ,  C23C16/40

    CPC classification number: C23C14/024 ,  C22C21/00 ,  C23C14/205 ,  C23C16/402 ,  C23C16/505 ,  G02B5/0808

    Abstract: Provided is a structure configured such that even when resin, such as methacryl resin, exhibiting a low adhesion to a metal thin film is used, the resin and the metal thin film are firmly stacked in close contact with each other, and a film formation method capable of manufacturing a structure in which a metal thin film is, with a high adhesion, formed on a resin work exhibiting a low adhesion to the metal thin film, wherein the structure is configured such that an Al thin film 102 is, by sputtering, formed on a work W made of methacryl resin to form a stack of the work W and the Al thin film 102, and has a mixed region 101 of Al, Si, O, and C between the work W and the Al thin film 102. In the mixed region 101, Al is covalently bound to any one of Si, O, and C, or Al, Si, O, and C form a diffusion mixed layer.

    Abstract translation: 提供一种构造成使得即使使用与金属薄膜具有低粘合性的树脂（例如甲基丙烯酸树脂），树脂和金属薄膜彼此紧密地层叠，并且成膜方法 能够制造在与金属薄膜具有低粘合性的树脂工件上形成金属薄膜具有高粘附性的结构，其中该结构被构造成使得Al薄膜102通过溅射， 形成在由甲基丙烯酸树脂制成的工件W上以形成工件W和Al薄膜102的堆叠，并且在工件W和Al薄膜102之间具有Al，Si，O和C的混合区域101。 在混合区域101中，Al与Si，O和C中的任一种共价结合，或Al，Si，O和C形成扩散混合层。

    X-RAY PHASE IMAGING SYSTEM
    10.
    发明申请
    X-RAY PHASE IMAGING SYSTEM 有权

    公开(公告)号：US20210364453A1

    公开(公告)日：2021-11-25

    申请号：US17287412

    申请日：2019-07-22

    Applicant: Shimadzu Corporation

    Inventor： Satoshi SANO ,  Koichi TANABE ,  Yukihisa WADA ,  Satoshi TOKUDA ,  Akira HORIBA ,  Naoki MORIMOTO

    IPC: G01N23/041 ,  G01N23/046

    Abstract: This X-ray phase imaging system (100) includes an X-ray source (1), a detector (2), a first grating group (3), a second grating group (4), a moving mechanism (5), and an image processing unit (6). The moving mechanism is configured to relatively move a subject (T) and the imaging system (9) such that the subject (T) passes through a first grating region (R1) and a second grating region (R2). The image processing unit is configured to generate a first phase-contrast image (14a) and a second phase-contrast image (14b).

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