摘要:
Novel amide derivatives are disclosed. As examples of said amide derivatives are mentioned 1-[2-[5-(3-methoxy-4-ethoxycarbonyloxyphenyl)-2,4-pentadienoyl]-aminoethyl]-4-benzhydroxypiperidine, 1-[2-[3-(3-methoxy-4-ethoxycarbonyloxyphenyl)-2-propenoyl]-4-benzhydroxypiperidine, 1-[3-[-(3-methoxy-4-ethoxycarbonyloxyphenyl)-2,4-pentadienoyl]aminopropyl]-4-benzhydrylpiperazine and the like. These amide derivatives are useful as antiallergic agents.
摘要:
Novel amide derivatives are disclosed. As examples of said amide derivatives are mentioned 1-[2-[5-(3-methoxy-4-ethoxycarbonyloxyphenyl)-2,4-pentadienoyl]-aminoethyl]-4-benzhydroxypiperidine, 1-[2-[3-(3-methoxy-4-ethoxycarbonyloxyphenyl)-2-propenoyl]aminoethyl]-4-benzhydroxypiperidine, 1-[3-[5-(3-methoxy-4-ethoxycarbonyloxyphenyl)-2,4-pentadienoyl]aminopropyl]-4-benzhydrylpiperazine and the like. These amide derivatives are useful as antiallergic agents.
摘要:
Novel amide derivatives are disclosed. As examples of said amide derivatives are mentioned 1-[2-(5-(3-methoxy-4-benzyloxyphenyl)-2,4-pentadienoyl)aminoethyl]-4-diphenylmethoxypiperidine, 1-[2-(5-(3-methoxy-4-pentadienoyl)aminoethyl]-4-diphenylmethoxypiperidine and 1-[2-(5-(3-methoxy-4-ethoxymethoxyphenyl)-2,4-pentadienoyl)aminoethyl]-4-diphenylmethoxypiperidine. These amide derivatives are useful as antiallergic agents.
摘要:
(1) A niobium monoxide powder for a capacitor represented by formula: NbOx (x=0.8 to 1.2) and optionally containing other elements in an amount of 50 to 200,000 ppm, having a tapping density of 0.5 to 2.5 g/ml, an average particle size of 10 to 1000 μm, angle of repose from 10° to 60°, the BET specific surface area from 0.5 to 40 m2/g and a plurality of pore diameter peak tops in the pore distribution, and a producing method thereof; (2) a niobium monoxide sintered body, which is obtained by sintering the above niobium monoxide powder and, having a plurality of pore diameter peak tops in a range of 0.01 μm to 500 μm, preferably, the peak tops of two peaks among the plurality of pore diameter peak tops having a highest relative intensity are present in the range of 0.2 to 0.7 μm and in the range of 0.7 to 3 μm, respectively, and a producing method thereof; (3) a capacitor using the above sintered body and a producing method thereof; and (4) an electronic circuit and electronic device using the above capacitor.
摘要:
A niobium hydride or niobium hydride alloy is ground at a temperature of −200 to 30° C. in the presence of a dispersion medium to obtain a niobium powder for capacitors, having a low oxygen content, the niobium powder for capacitors is granulated to obtain a niobium granulated product for capacitors, having an average particle size of 10 to 500 μm, the niobium powder or granulated powder for capacitors is sintered to obtain a sintered body, and a capacitor is fabricated by forming a dielectric material on the surface of the sintered body and providing another part electrode on the dielectric material, whereby a capacitor having good LC characteristics and less dispersed in the LC characteristics is obtained.
摘要:
(1) A niobium monoxide powder for a capacitor represented by formula: NbOx (x=0.8 to 1.2) and optionally containing other elements in an amount of 50 to 200,000 ppm, having a tapping density of 0.5 to 2.5 g/ml, an average particle size of 10 to 1000 μm, angle of repose from 10° to 60°, the BET specific surface area from 0.5 to 40 m2/g and a plurality of pore diameter peak tops in the pore distribution, and a producing method thereof; (2) a niobium monoxide sintered body, which is obtained by sintering the above niobium monoxide powder and, having a plurality of pore diameter peak tops in a range of 0.01 μm to 500 μm, preferably, the peak tops of two peaks among the plurality of pore diameter peak tops having a highest relative intensity are present in the range of 0.2 to 0.7 μm and in the range of 0.7 to 3 μm, respectively, and a producing method thereof; (3) a capacitor using the above sintered body and a producing method thereof; and (4) an electronic circuit and electronic device using the above capacitor.
摘要:
The invention provides a method of manufacturing a porous anode for a solid electrolytic capacitor, comprising a step of subjecting a molded body containing powder of at least one material selected from oxygen-containing niobium material and oxygen-containing tantalum material and a pore-forming agent which is solid at reduction temperature to reduction reaction using reducing agent and another step of removing the pore-forming agent from the reduction reaction product and a solid electrolytic capacitor using an anode obtained thereby. As niobium material and tantalum material, at least one material selected from niobium, niobium alloy, niobium compound, tantalum, tantalum alloy and tantalum compound is used respectively. In the invention, the peak position, the number and quantity of pores can be optimized according to the cathode agent used, whereby a solid electrolytic capacitor having an improved property for impregnation with cathode agent, high capacitance, low ESR, good tan δ characteristics and long-term reliability, is obtained.
摘要:
The present invention relates to niobium powder for a capacitor, comprising a niobium layer and a mixed layer of silicon nitride and niobium, the mixed layer being present in the vicinity of the powder particle surface; granulated niobium powder thereof; a niobium sintered body using the niobium powder and the granulated powder; and a capacitor using the sintered body as one electrode. The niobium powder for a capacitor of the present invention enables to produce a niobium capacitor having a high capacitance, a low leakage current, a low ESR and good tan δ characteristics and being excellent particularly in the properties of the breakdown voltage and soldering heat resistance.
摘要:
A process for producing a niobium capacitor, including a step of exposing the dielectric oxide layer to a temperature of 100 to 1,400° C. is disclosed. A capacitor obtained by the production process of the present invention has excellent LC properties, and the reduction in the capacitance due to application of DC bias is small.
摘要:
(1) A niobium powder for a capacitor having a tapping density of 0.5 to 2.5 g/ml, an average particle size of 10 to 1000 μm, angle of repose from 10° to 60°, the BET specific surface area from 0.5 to 40 m2/g and a plurality of pore diameter peak tops in the pore distribution, and a producing method thereof; (2) a niobium sintered body, which is obtained by sintering the above niobium powder and, having a plurality of pore diameter peak tops in a range of 0.01 μm to 500 μm, preferably, the peak tops of two peaks among the plurality of pore diameter peak tops having a highest relative intensity are present in the range of 0.2 to 0.7 μm and in the range of 0.7 to 3 μm, respectively, and a producing method thereof; (3) a capacitor using the above sintered body and a producing method thereof; and (4) an electronic circuit and electronic device using the above capacitor.
摘要翻译:(1)一种用于电容器的铌粉末,其具有0.5-2.5g / ml的敲击密度,10-1000μm的平均粒度,10°至60°的休止角,BET比表面积为0.5至40 m 2和/或多孔孔分布中的孔径峰顶及其制造方法。 (2)一种铌烧结体,其通过烧结上述铌粉末而得到,并且具有0.01μm〜500μm的多个孔径峰顶,优选为多个孔中的两个峰的峰顶 具有最高相对强度的直径峰顶分别存在于0.2至0.7μm的范围内且在0.7至3μm的范围内。 (3)使用上述烧结体的电容器及其制造方法; 和(4)使用上述电容器的电子电路和电子装置。