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公开(公告)号：US20060118044A1
公开(公告)日：2006-06-08
申请号：US11292353
申请日：2005-12-02
申请人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
发明人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
CPC分类号： H01J37/32697 , H01J37/32082
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。
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公开(公告)号：US07767055B2
公开(公告)日：2010-08-03
申请号：US11292353
申请日：2005-12-02
申请人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
发明人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32697 , H01J37/32082
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。
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公开(公告)号：US07678225B2
公开(公告)日：2010-03-16
申请号：US10468108
申请日：2002-02-08
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32642 , H01J37/32623
摘要： A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region consist essentially of a dielectric, while the surface of the middle region consists essentially of a conductor. The middle region is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate. If there is no middle region, the peak of plasma density appears substantially directly above the peripheral edge of the target substrate.
摘要翻译： 用于等离子体处理装置的聚焦环具有内部区域，中间区域和外部区域，其从内侧依次设置成围绕目标基板。 在暴露于等离子体的一侧，内部区域和外部区域的表面基本上由电介质构成，而中间区域的表面基本上由导体组成。 中间区域被设置为将等离子体密度的峰值移动到目标衬底的周边边缘的外部。 如果不存在中间区域，则等离子体密度的峰值基本上直接出现在目标衬底的外围边缘上方。
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公开(公告)号：US20140113450A1
公开(公告)日：2014-04-24
申请号：US14125363
申请日：2012-06-12
申请人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
发明人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
IPC分类号： H01L21/3065 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32165 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J2237/334 , H01L21/30655 , H01L21/308 , H01L21/3081 , H01L21/32132 , H01L21/32137 , H01L21/67069 , H01L21/76898
摘要： A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
摘要翻译： 等离子体蚀刻方法包括将含有氧气和硫氟化物气体的蚀刻气体以预定的流量供给到容纳包括硅层和抗蚀剂层的处理基板的处理室中，并且利用从 使用抗蚀剂层作为掩模的蚀刻气体。 等离子体蚀刻方法还包括：在将氧气与氟化硫气体的流量比调整为第一流量比的同时蚀刻硅层的第一步骤; 第二步骤，在降低所述氧气的流量的同时，将所述流量比降低到低于所述第一流量比的第二流量比，来蚀刻所述硅层; 以及在流量比被调节到第二流量比时蚀刻硅层的第三步骤。
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公开(公告)号：US09048191B2
公开(公告)日：2015-06-02
申请号：US14125363
申请日：2012-06-12
申请人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
发明人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/3213 , H01J37/32 , H01L21/768 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32165 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J2237/334 , H01L21/30655 , H01L21/308 , H01L21/3081 , H01L21/32132 , H01L21/32137 , H01L21/67069 , H01L21/76898
摘要： A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
摘要翻译： 等离子体蚀刻方法包括将含有氧气和硫氟化物气体的蚀刻气体以预定的流量供给到容纳包括硅层和抗蚀剂层的处理基板的处理室中，并且利用从 使用抗蚀剂层作为掩模的蚀刻气体。 等离子体蚀刻方法还包括：在将氧气与氟化硫气体的流量比调整为第一流量比的同时蚀刻硅层的第一步骤; 第二步骤，在降低所述氧气的流量的同时，将所述流量比降低到低于所述第一流量比的第二流量比，来蚀刻所述硅层; 以及在流量比被调节到第二流量比时蚀刻硅层的第三步骤。
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