公开(公告)号：US20060118044A1

公开(公告)日：2006-06-08

申请号：US11292353

申请日：2005-12-02

申请人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

发明人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32697 ,  H01J37/32082

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

公开(公告)号：US07767055B2

公开(公告)日：2010-08-03

申请号：US11292353

申请日：2005-12-02

申请人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

发明人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32697 ,  H01J37/32082

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

公开(公告)号：US07585386B2

公开(公告)日：2009-09-08

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20090285998A1

公开(公告)日：2009-11-19

申请号：US12505940

申请日：2009-07-20

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： C23C16/513 ,  C23C14/24 ,  C23C16/04 ,  B05D1/32

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20050276928A1

公开(公告)日：2005-12-15

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C14/00 ,  C23F4/00 ,  C25D17/10 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US07922862B2

公开(公告)日：2011-04-12

申请号：US12505940

申请日：2009-07-20

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20060081337A1

公开(公告)日：2006-04-20

申请号：US11292368

申请日：2005-12-02

申请人： Shinji Himori ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Etsuo Iijima ,  Hiroharu Ito ,  Shoichiro Matsuyama ,  Noriaki Imai ,  Kazuya Nagaseki

发明人： Shinji Himori ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Etsuo Iijima ,  Hiroharu Ito ,  Shoichiro Matsuyama ,  Noriaki Imai ,  Kazuya Nagaseki

IPC分类号： C23F1/00 ,  C23C14/00

CPC分类号： H01J37/32091 ,  H01J2237/2001

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode serving as a cathode electrode, and a second electrode grounded to serve as an anode electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. The second electrode includes a conductive counter surface facing the first electrode and exposed to the plasma generation region.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在室中，用作阴极的第一电极和接地以用作阳极的第二电极彼此相对地设置。 设置RF电源以向第一电极提供RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 第二电极包括面向第一电极并暴露于等离子体产生区域的导电计数器表面。

公开(公告)号：US07230202B2

公开(公告)日：2007-06-12

申请号：US10927587

申请日：2004-08-27

申请人： Daisuke Hayashi ,  Kazuya Nagaseki ,  Shinji Himori ,  Atsushi Matsuura ,  Ryo Nonaka

发明人： Daisuke Hayashi ,  Kazuya Nagaseki ,  Shinji Himori ,  Atsushi Matsuura ,  Ryo Nonaka

IPC分类号： B23K9/00

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32532

摘要： Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

摘要翻译： 这里公开了一种等离子体处理装置，其将处理气体引入到气密处理容器中，该气密处理容器施加射频功率以产生等离子体，并且将等离子体处理传送到布置在处理容器中的被处理物体。 等离子体处理装置包括：布置在处理容器中的电极单元，具有用于施加射频电力的电极的电极单元和布置在电极单元中的空间部分，每个电极单元绝缘电极和处理容器的空间部分 其他。 空间部分与处理容器外部的大气连通。

公开(公告)号：US5514425A

公开(公告)日：1996-05-07

申请号：US392737

申请日：1995-03-06

申请人： Hitoshi Ito ,  Kyoichi Suguro ,  Nobuo Hayasaka ,  Haruo Okano ,  Shinji Himori ,  Kazuya Nagaseki ,  Syuji Mochizuki

发明人： Hitoshi Ito ,  Kyoichi Suguro ,  Nobuo Hayasaka ,  Haruo Okano ,  Shinji Himori ,  Kazuya Nagaseki ,  Syuji Mochizuki

IPC分类号： H01L21/205 ,  C23C16/04 ,  C23C16/34 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  C23C14/02

CPC分类号： H01L21/76865 ,  C23C16/045 ,  C23C16/34 ,  H01L21/76843 ,  H01L21/76877

摘要： A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.

摘要翻译： PCT No.PCT / JP94 / 01089 Sec。 371日期：1995年3月6日 102（e）1995年3月6日PCT PCT 1994年7月5日PCT公布。 第WO95 / 02076号公报 日本1990年1月19日。根据本发明的薄膜形成方法的特征在于包括以下步骤：将TiCl 4，氢，氮和NF 3引入包含具有凹槽的半导体衬底（1）的成膜室 在其表面上，在室被抽真空至10-4乇或更小之后; 并将这些气体转化为等离子体，从而在凹槽的除了凹槽的壁表面之外的部分上形成薄的TiN膜。

公开(公告)号：US07622017B2

公开(公告)日：2009-11-24

申请号：US10856797

申请日：2004-06-01

申请人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

发明人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

IPC分类号： C23C16/509 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6831 ,  H01J2237/2001 ,  H01L21/67069

摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。