公开(公告)号：US10818770B2

公开(公告)日：2020-10-27

申请号：US16518265

申请日：2019-07-22

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L27/12 ,  H01L29/51 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66 ,  H01L29/786

摘要： Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.

公开(公告)号：US10586873B2

公开(公告)日：2020-03-10

申请号：US16131760

申请日：2018-09-14

申请人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L51/00

摘要： A method for producing a field-effect transistor including first-oxide-layer and second-oxide-layer and forming front-channel or back-channel in region where the first-oxide-layer and the second-oxide-layer are adjacent to each other, the method including: forming second-precursor-layer, which is precursor of the second-oxide-layer, so as to be in contact with first-precursor-layer, which is precursor of the first-oxide-layer, and then converting the first-precursor-layer and the second-precursor-layer to the first-oxide-layer and the second-oxide-layer, respectively, the forming includes at least one of treatments (I) and (II) below: (I) treatment of: coating first-oxide-precursor-forming coating liquid that can form precursor of first oxide and contains solvent; and then removing the solvent to form the first-precursor-layer which is the precursor of the first-oxide-layer; and (II) treatment of: coating second-oxide-precursor-forming coating liquid that can form precursor of second oxide and contains solvent; and then removing the solvent to form the second-precursor-layer which is the precursor of the second-oxide-layer.

公开(公告)号：US10170635B2

公开(公告)日：2019-01-01

申请号：US15370253

申请日：2016-12-06

申请人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32 ,  G09G3/3233 ,  G09G3/34 ,  G09G3/36 ,  G09G3/38

摘要： A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

公开(公告)号：US10115828B2

公开(公告)日：2018-10-30

申请号：US15220588

申请日：2016-07-27

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L21/336 ,  H01L21/768 ,  H01L29/24 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  G09G3/3225 ,  G09G3/34 ,  H01L29/40 ,  H01L29/417 ,  H01L27/12 ,  H01L27/32 ,  H01L21/02 ,  H01L51/05 ,  H01L51/10 ,  H01L27/28 ,  H01L29/66

摘要： A field-effect transistor including: a gate electrode; a source electrode and a drain electrode; an active layer disposed to be adjacent to the source electrode and the drain electrode and including a n-type oxide semiconductor; and a gate insulating layer disposed between the gate electrode and the active layer, wherein the n-type oxide semiconductor undergoes substitutional doping with at least one dopant selected from divalent, trivalent, tetravalent, pentavalent, hexavalent, heptavalent, and octavalent cations, valence of the dopant is greater than valence of a metal ion constituting the n-type oxide semiconductor, provided that the dopant is excluded from the metal ion, and the source electrode and the drain electrode include a material selected from Au, Pt, and Pd and alloys including at least any one of Au, Pt, and Pd, in at least contact regions of the source electrode and the drain electrode with the active layer.

公开(公告)号：US10008181B2

公开(公告)日：2018-06-26

申请号：US15452886

申请日：2017-03-08

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  G09G5/10 ,  H01L27/32

CPC分类号： G09G5/10 ,  G09G3/20 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2320/0646 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78693

摘要： A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.

公开(公告)号：US09972274B2

公开(公告)日：2018-05-15

申请号：US15032192

申请日：2014-10-23

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

IPC分类号： H01L27/12 ,  G09G3/36 ,  H01L29/786 ,  H01L27/32

CPC分类号： G09G3/3696 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2310/0278 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/7869

摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

公开(公告)号：US09761673B2

公开(公告)日：2017-09-12

申请号：US14007705

申请日：2012-03-28

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： C01G3/02 ,  C01F11/02 ,  H01L29/24 ,  H01L29/786 ,  C01F5/06 ,  C01F11/04 ,  G09G3/32 ,  H01L29/04 ,  H01L27/32

CPC分类号： H01L29/242 ,  C01F5/06 ,  C01F11/04 ,  C01G3/02 ,  C01P2002/02 ,  G09G3/32 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78693

摘要： A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≦x

公开(公告)号：US09527285B2

公开(公告)日：2016-12-27

申请号：US15081307

申请日：2016-03-25

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： B41J2/14

CPC分类号： B41J2/1433 ,  B41J2/06 ,  B41J2002/14491

摘要： A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

摘要翻译： 一种用于液滴喷射头喷射带电液滴的喷嘴板，包括设置在喷嘴面上的排出口; 填充有从排出口排出的液体的排出室; 喷嘴孔，其从所述排出口沿所述喷嘴板的厚度方向延伸并与所述排出室连通; 设置在所述排出室或所述喷嘴孔中的第一电极并接触所述液滴的一部分; 以及设置在喷嘴面上并且既不连接到第一电极也不与液滴接触的第二电极。

公开(公告)号：US20160013215A1

公开(公告)日：2016-01-14

申请号：US14795234

申请日：2015-07-09

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  G09G3/22 ,  C09D5/24 ,  H01L29/786 ,  H01L29/24

CPC分类号： H01L27/1225 ,  C09D5/24 ,  G09G3/22 ,  G09G2300/0421 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A field-effect transistor, including: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode configured to take out electric current; an active layer formed of a n-type oxide semiconductor, and provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor includes at least one selected from the group consisting of Re, Ru, and Os as a dopant.

摘要翻译： 一种场效应晶体管，包括：施加栅极电压的栅电极; 源电极和漏电极，被配置为取出电流; 由n型氧化物半导体形成的有源层，与源电极和漏电极接触; 以及栅极绝缘层，设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体包括选自由Re，Ru和Os组成的组中的至少一种作为掺杂剂。

公开(公告)号：US08833956B2

公开(公告)日：2014-09-16

申请号：US13512030

申请日：2010-10-29

申请人： Shinji Matsumoto

发明人： Shinji Matsumoto

IPC分类号： G09F13/04 ,  G02F1/1335

CPC分类号： G02F1/133603 ,  G02F1/133605 ,  G02F1/133611

摘要： A lighting device includes a light source, a chassis housing the light source, and a reflection sheet provided in the chassis. The reflection sheet includes a bottom portion and a sloped portion. The bottom portion extends along a surface of the bottom plate and the sloped portion extends from a peripheral edge of the bottom portion. The sheet sloped portion is inclined with respect to the sheet bottom portion toward a light exit side of the lighting device. The reflection sheet includes a border portion and an adjacent portion. The border portion includes a borderline between the bottom portion and the sloped portion and an area along the borderline, and the adjacent portion is provided close to the border portion and on a side far away from the borderline. Light reflectance is higher in the border portion than in the adjacent portion on the surface of the reflection sheet.

摘要翻译： 照明装置包括光源，容纳光源的底架以及设置在底架中的反射片。 反射片包括底部和倾斜部分。 底部部分沿着底板的表面延伸，并且倾斜部分从底部的周边边缘延伸。 片材倾斜部分相对于片材底部朝向照明装置的光出射侧倾斜。 反射片包括边界部分和相邻部分。 边界部分包括底部和倾斜部分之间的边界以及沿着边界的区域，并且相邻部分靠近边界部分设置在远离边界线的一侧。 边界部分的光反射率高于反射片表面的相邻部分。