公开(公告)号：US6076932A

公开(公告)日：2000-06-20

申请号：US934867

申请日：1997-09-22

申请人： Shinji Uchida ,  Tsuguhiro Korenaga ,  Hiroyasu Tsuji ,  Shougo Nasu ,  Norimoto Nouchi ,  Toshio Fukazawa ,  Toshihiro Kuriyama ,  Yuji Matsuda

发明人： Shinji Uchida ,  Tsuguhiro Korenaga ,  Hiroyasu Tsuji ,  Shougo Nasu ,  Norimoto Nouchi ,  Toshio Fukazawa ,  Toshihiro Kuriyama ,  Yuji Matsuda

IPC分类号： G02B5/22 ,  G02F1/1335 ,  G11B7/135 ,  G02B27/00

CPC分类号： G11B7/1356 ,  G02B5/22 ,  G02F1/133512 ,  G11B7/1362

摘要： This invention provides a light absorber which can be used for optical equipment like optical-disk equipment and a liquid crystal display. The light absorber has a layered structure including a light absorbing layer and a transparent layer. The light absorbing layer absorbs a reflected light from the inside of the absorber as well as incident light into the absorber while the transparent layer helps attenuate the reflected light by interference of light. One of the light absorbing layers which is thicker than others may work as a shading layer for the incident light.

摘要翻译： 本发明提供一种可用于诸如光盘设备和液晶显示器之类的光学设备的光吸收体。 光吸收体具有包括光吸收层和透明层的层状结构。 光吸收层吸收来自吸收体的内部的反射光以及入射到吸收体的入射光，同时透明层通过光的干涉来帮助衰减反射光。 比其他光吸收层更厚的一个可以作为入射光的遮光层。

公开(公告)号：US08120130B2

公开(公告)日：2012-02-21

申请号：US12140669

申请日：2008-06-17

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/14685 ,  H01L27/14806

摘要： It is an object of the present invention to provide a solid-state imaging device that can achieve a high sensitivity, finer pixels for increasing the number of pixels, a high-speed operation, and high image quality, and a method for manufacturing the same. There are provided a plurality of photoelectric conversion portions arranged in a matrix on a substrate, a vertical transfer channel arranged between vertical columns of the photoelectric conversion portions, a plurality of vertical transfer electrodes for transferring a charge of the photoelectric conversion portions to the vertical transfer channel, a light-shielding film that is laminated on the vertical transfer electrodes via a first insulating film and has a plurality of window portions, each defining a light-receiving portion of each of the photoelectric conversion portions, and a shunt wiring that is arranged in a region overlapping the vertical transfer channel and is insulated from the light-shielding film by a second insulating film. A driving pulse according to a drive phase of each of the vertical transfer electrodes is supplied from the shunt wiring.

摘要翻译： 本发明的目的是提供一种能够实现高灵敏度，更精细的像素以增加像素数量，高速操作和高图像质量的固态成像装置及其制造方法 。 提供了在基板上以矩阵形式布置的多个光电转换部分，布置在光电转换部分的垂直列之间的垂直传输通道，用于将光电转换部分的电荷转移到垂直传送的多个垂直传输电极 通道，通过第一绝缘膜层叠在垂直传输电极上并具有多个窗口部分的光屏蔽膜，每个窗口部分限定每个光电转换部分的光接收部分，以及布置在其中的分流布线 在与垂直传输通道重叠的区域中，并且通过第二绝缘膜与遮光膜绝缘。 从分路布线供给根据每个垂直传输电极的驱动相位的驱动脉冲。

公开(公告)号：US08030724B2

公开(公告)日：2011-10-04

申请号：US12772676

申请日：2010-05-03

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14812 ,  H01L27/14831 ,  H01L2224/11

摘要： A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.

摘要翻译： 一种固态成像装置，包括成像区域，形成在成像区域的外周部分的外围电路区域，具有成像区域和在其主表面上的外围电路区域的第一导电型半导体基板，第二导电性 形成在半导体衬底中的第一半导体层，形成在第一半导体层中的第一导电类型的第二半导体层，形成在贯穿半导体衬底的贯穿半导体衬底的贯通半导体衬底的厚度方向的通孔，以及形成 在半导体衬底上并连接到通孔。 通孔穿过半导体衬底的第一导电类型区域。

公开(公告)号：US07847852B2

公开(公告)日：2010-12-07

申请号：US11196740

申请日：2005-08-04

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： G02B13/16 ,  H04N5/225

CPC分类号： H01L27/14685 ,  H01L27/14627

摘要： An object of the present invention is to provide a solid-state imaging device that can be slimmed down and have an improved picture quality without sacrificing its sensitivity and the manufacturing method of the solid-state imaging device. The solid-state imaging device includes an imaging unit where unit cells are arranged in a two-dimensional array. Each of these unit cells has a photodiode and a first microlens and a second microlens which are formed above the photodiode. The maximum curvatures of the convex parts become greater from the center part to the periphery of the imaging unit.

摘要翻译： 本发明的一个目的是提供一种固态成像装置，该固态成像装置可以在不牺牲其灵敏度和固态成像装置的制造方法的情况下变薄并且具有改善的图像质量。 固态成像装置包括其中单位单元以二维阵列排列的成像单元。 这些单元电池中的每一个都具有光电二极管和形成在光电二极管上方的第一微透镜和第二微透镜。 凸部的最大曲率从成像单元的中心部到周边变大。

公开(公告)号：US07499094B2

公开(公告)日：2009-03-03

申请号：US10824427

申请日：2004-04-15

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： G02B13/16 ,  G02B3/08

CPC分类号： H04N9/045

摘要： Each intralayer lens disposed between a color filter 120 and photoelectric conversion sections has a Fresnel lens structure composed of a center lens 132 and an annular lens 134. As a result, the thickness of the intralayer lenses is reduced, and positions of upper lenses can be lowered without having to reduce the thickness of a color filter.

摘要翻译： 布置在滤色器120和光电转换部之间的每个内部透镜具有由中心透镜132和环形透镜134组成的菲涅耳透镜结构。结果，内镜透镜的厚度减小，并且上透镜的位置可以 降低而不必减小滤色器的厚度。

公开(公告)号：US07023034B2

公开(公告)日：2006-04-04

申请号：US10891103

申请日：2004-07-15

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L31/062

CPC分类号： H01L27/14629 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14818 ,  H01L31/02164 ,  H01L31/02325

摘要： The solid-state imaging device according to the present invention comprises: a plurality of light-sensitive elements 1 arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate; a plurality of detecting electrodes provided on the semiconductor substrate corresponding to the plurality of the light-sensitive elements for detecting an electrical charge generated by each light-sensitive element; a light-shielding film 58 coating the plurality of detecting electrodes and having an aperture 65 over each light-sensitive element; and a plurality of reflecting walls 62, which are formed in a grid pattern over the light-shielding film so as to partition the apertures individually over the respective light-sensitive elements, for reflecting a portion of light entering the semiconductor substrate from above onto the aperture on each light-sensitive element. The plurality of reflecting walls are formed so that a middle point of the reflecting walls opposing each other across the aperture is displaced from a center of the aperture toward a center of the photoreceiving region.

摘要翻译： 根据本发明的固态成像装置包括：多个光敏元件1，其设置在半导体衬底上的光接收区域中以规则间隔排列成矩阵形式; 多个检测电极，设置在与多个感光元件对应的半导体衬底上，用于检测由每个光敏元件产生的电荷; 覆盖多个检测电极的遮光膜58，并且在每个感光元件上具有孔65; 以及多个反射壁62，它们以遮光膜的方式形成为格栅图案，以分隔开各个感光元件上的孔，用于将从上方进入半导体衬底的光的一部分反射到 光敏元件上的光圈。 多个反射壁形成为使得穿过孔径相对的反射壁的中点从孔的中心朝向光接收区域的中心偏移。

公开(公告)号：US06466403B1

公开(公告)日：2002-10-15

申请号：US09532750

申请日：2000-03-22

申请人： Kiyoshi Sato ,  Toshihiro Kuriyama ,  Toshinori Watanabe

发明人： Kiyoshi Sato ,  Toshihiro Kuriyama ,  Toshinori Watanabe

IPC分类号： G11B5147

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/313

摘要： The present invention provides a thin film magnetic head having a recording track width of 1 &mgr;m or less, and a method for manufacturing the thin film magnetic head having a recording track width of 1 &mgr;m or less. In the thin film magnetic head, an upper core layer and a lower core layer extend from a back region toward a magnetic pole tip region, and are exposed at a medium opposing surface, and a gap layer is provided, in the magnetic pole tip region, between the upper core layer and the lower core layer. An insulation layer is deposited on the lower core layer, and a groove that extends from the medium opposing surface toward the back region is provided in the magnetic pole tip region of the insulation layer. A lower magnetic pole layer, the gap layer, and an upper magnetic pole layer are deposited in the groove. The lower magnetic pole layer is joined to the lower core layer, while the upper magnetic pole layer is joined to the upper core layer.

摘要翻译： 本发明提供一种具有1um或更小的记录磁道宽度的薄膜磁头，以及一种具有1μm或更小的记录磁道宽度的薄膜磁头的制造方法。 在薄膜磁头中，上芯层和下芯层从背部区域朝向磁极尖端区域延伸，并且在介质相对表面处露出，并且在磁极尖端区域中设置间隙层 ，在上芯层和下芯层之间。 绝缘层沉积在下芯层上，并且在绝缘层的磁极尖端区域中设置从介质相对表面朝向后部区域延伸的槽。 凹槽中沉积下磁极层，间隙层和上磁极层。 下磁极层接合到下芯层，而上磁极层与上芯层接合。

公开(公告)号：USRE37819E1

公开(公告)日：2002-08-13

申请号：US09482696

申请日：2000-01-18

申请人： Masamichi Saito ,  Toshinori Watanabe ,  Toshihiro Kuriyama

发明人： Masamichi Saito ,  Toshinori Watanabe ,  Toshihiro Kuriyama

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044

摘要： The present invention provides a magnetoresistive head wherein: a magnetoresistive film is created in a read-track region at the center of the magnetoresistive head; an antiferromagnetic film and a ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with the antiferromagnetic film are created on each end of the magnetoresistive film outside the read-track region in such a way that the ferromagnetic film is located beside the magnetoresistive film; a nonmagnetic intermediate film is created between the magnetoresistive film and the ferromagnetic film for preventing ferromagnetic coupling from being developed on a contact boundary surface between the magnetoresistive film and the ferromagnetic film and for making crystal orientations of the antiferromagnetic film and the ferromagnetic film uniform; and bias magnetization is applied to the magnetoresistive film by exchange coupling between the antiferromagnetic film and the ferromagnetic film.

摘要翻译： 本发明提供了一种磁阻头，其中：在磁阻头的中心处的读磁道区域中产生磁阻膜; 在磁轨膜区域的外侧的磁阻膜的两端形成反铁磁膜和由于与反铁磁性膜直接接触而产生交换耦合磁场的铁磁性膜，使铁磁膜位于磁阻膜旁边 ; 在磁阻膜和铁磁膜之间形成非磁性中间膜，用于防止铁磁耦合在磁阻膜和铁磁膜之间的接触边界面上显影，并使反铁磁膜和铁磁膜的晶体取向均匀; 并且通过反铁磁膜和铁磁性膜之间的交换耦合将偏磁化施加到磁阻膜。

公开(公告)号：US5043783A

公开(公告)日：1991-08-27

申请号：US411094

申请日：1989-09-22

申请人： Shigenori Matsumoto ,  Toshihiro Kuriyama ,  Yoshimitu Hiroshima

发明人： Shigenori Matsumoto ,  Toshihiro Kuriyama ,  Yoshimitu Hiroshima

IPC分类号： H04N5/14 ,  H01L27/148 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/3728

CPC分类号： H01L27/14831

摘要： A solid state image sensor includes a semiconductor substrate of a first conductivity type, in a plurality of cell units formed in the surface region of the semiconductor substrate. Each of the cell units includes a photo detector portion and an electric charge reading portion. The photo detector portion includes a first impurity region of a second conductivity type formed in the surface region of the semiconductor substrate and a second impurity diffusion region of the first conductivity type formed in the surface region of the first impurity region. The electric charge reading portion includes a third impurity region of the second conductivity type formed in the surface of the semiconductor substrate, a first insulation film formed on the third impurity diffusion region and an electrode formed in the first insulation film.

公开(公告)号：US4947224A

公开(公告)日：1990-08-07

申请号：US251026

申请日：1988-09-26

申请人： Takao Kuroda ,  Toshihiro Kuriyama ,  Kenju Horii ,  Hiroyuki Mizuno

发明人： Takao Kuroda ,  Toshihiro Kuriyama ,  Kenju Horii ,  Hiroyuki Mizuno

IPC分类号： H01L27/148

CPC分类号： H01L27/14887 ,  H01L27/14831

摘要： In a solid state image sensing device of P-conductivity type well, photo-electro converting region (1) are configured to have a larger area as the depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

摘要翻译： 在P导电型阱的固体摄像装置中，光电转换区域（1）被配置为随着深度增加而具有较大面积，使得在p导电型阱中产生的过多电荷容易转移 从底部（1b）的扩大的周边部分（7）到通道（3），而不会不期望地通过薄的p导电类型区域6向下传递到基板（4），并且将在薄p中产生的电荷 在传统器件的光电转换区域下良好的导电型被抑制，有效地减少了涂抹现象。