公开(公告)号：US08753729B2

公开(公告)日：2014-06-17

申请号：US14007243

申请日：2012-03-21

申请人： Shinya Omasa ,  Takashi Sakuma

发明人： Shinya Omasa ,  Takashi Sakuma

IPC分类号： B29D22/00 ,  B29D23/00 ,  B32B1/08

CPC分类号： C09J123/06 ,  B32B1/02 ,  B32B7/12 ,  B32B27/08 ,  B32B27/306 ,  B32B27/32 ,  B32B27/34 ,  B32B2270/00 ,  B32B2272/00 ,  B32B2439/40 ,  B60K15/03006 ,  B60K15/03177 ,  C09J123/04 ,  C09J123/26 ,  C09J151/06 ,  Y10T428/1352 ,  Y10T428/31746 ,  Y10T428/31757 ,  Y10T428/31909 ,  Y10T428/3192 ,  Y10T428/31938

摘要： There is provided an adhesive resin composition suitable for a multilayer structure which retains sufficient adhesive strength even when in contact with gasoline or light gas oil, and has excellent long-term durability and durability in high-temperature fuels and excellent adhesive strength at high temperature. The adhesive resin composition of the invention includes a modified ethylene polymer (A1) which is graft-modified with an unsaturated carboxylic acid or a derivative thereof and which has a density of 930 to 980 kg/m3, and an unmodified ethylene polymer (A2) having a density of 910 to 929 kg/m3, wherein the adhesive resin composition has a melt flow rate (MFR) [ASTM D 1238 (temperature: 190° C., 2160 g load)] of 0.1 to 3 g/10 min and a density of 920 to 930 kg/m3 and has an elution amount of 60 wt % or less at 85° C. or lower as determined by cross-fractionation chromatography. The present invention also relates to a multilayer structure formed by using the adhesion resin composition.

摘要翻译： 提供一种适用于多层结构的粘合树脂组合物，即使在与汽油或轻质瓦斯油接触时也保持足够的粘合强度，并且在高温燃料中具有优异的长期耐久性和耐久性，并且在高温下具有优异的粘合强度。 本发明的粘合剂树脂组合物包括用不饱和羧酸或其衍生物接枝改性且密度为930至980kg / m 3的改性乙烯聚合物（A1）和未改性的乙烯聚合物（A2） 密度为910〜929kg / m 3，其中粘合性树脂组合物的熔体流动速率（MFR）[ASTM D 1238（温度：190℃，2160g负荷）]为0.1〜3g / 10分钟， 密度为920〜930kg / m 3，通过交叉分级色谱法测定，在85℃以下的洗脱量为60重量％以下。 本发明还涉及通过使用粘合树脂组合物形成的多层结构体。

公开(公告)号：US20140017428A1

公开(公告)日：2014-01-16

申请号：US14007243

申请日：2012-03-21

申请人： Shinya Omasa ,  Takashi Sakuma

发明人： Shinya Omasa ,  Takashi Sakuma

IPC分类号： C09J123/06 ,  B60K15/03

CPC分类号： C09J123/06 ,  B32B1/02 ,  B32B7/12 ,  B32B27/08 ,  B32B27/306 ,  B32B27/32 ,  B32B27/34 ,  B32B2270/00 ,  B32B2272/00 ,  B32B2439/40 ,  B60K15/03006 ,  B60K15/03177 ,  C09J123/04 ,  C09J123/26 ,  C09J151/06 ,  Y10T428/1352 ,  Y10T428/31746 ,  Y10T428/31757 ,  Y10T428/31909 ,  Y10T428/3192 ,  Y10T428/31938

摘要： There is provided an adhesive resin composition suitable for a multilayer structure which retains sufficient adhesive strength even when in contact with gasoline or light gas oil, and has excellent long-term durability and durability in high-temperature fuels and excellent adhesive strength at high temperature. The adhesive resin composition of the invention includes a modified ethylene polymer (Al) which is graft-modified with an unsaturated carboxylic acid or a derivative thereof and which has a density of 930 to 980 kg/m3, and an unmodified ethylene polymer (A2) having a density of 910 to 929 kg/m3, wherein the adhesive resin composition has a melt flow rate (MFR) [ASTM 0 1238 (temperature: 190° C., 2160 g load)] of 0.1 to 3 g/10 min and a density of 920 to 930 kg/m3 and has an elution amount of 60 wt % or less at 85° C. or lower as determined by cross-fractionation chromatography. The present invention also relates to a multilayer structure formed by using the adhesion resin composition.

摘要翻译： 提供一种适用于多层结构的粘合树脂组合物，即使在与汽油或轻质瓦斯油接触时也保持足够的粘合强度，并且在高温燃料中具有优异的长期耐久性和耐久性，并且在高温下具有优异的粘合强度。 本发明的粘合性树脂组合物包括用不饱和羧酸或其衍生物接枝改性且密度为930〜980kg / m 3的改性乙烯聚合物（A1）和未改性的乙烯聚合物（A2） 密度为910〜929kg / m 3，粘合性树脂组合物的熔体流动速率（MFR）[ASTM 01238（温度：190℃，2160g负荷）]为0.1〜3g / 10分钟， 密度为920〜930kg / m 3，通过交叉分级色谱法测定，在85℃以下的洗脱量为60重量％以下。 本发明还涉及通过使用粘合树脂组合物形成的多层结构体。

公开(公告)号：US09121094B2

公开(公告)日：2015-09-01

申请号：US12072089

申请日：2008-02-22

申请人： Kaoru Maekawa ,  Hiroyuki Nagai ,  Tatsuo Hatano ,  Takashi Sakuma

发明人： Kaoru Maekawa ,  Hiroyuki Nagai ,  Tatsuo Hatano ,  Takashi Sakuma

IPC分类号： C23C14/34 ,  C23C14/18 ,  C23C14/02 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC分类号： C23C14/185 ,  C23C14/027 ,  C23C14/345 ,  C23C14/544 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.

摘要翻译： 本发明的目的是提供一种能够在一个处理容器中通过溅射在物体上容易地形成含有添加金属的合金层以在厚度方向上提供浓度梯度的技术。 也就是说，本发明可以形成具有所需浓度的膜，并且包括第一成膜工艺和第二成膜工艺，其改变处理容器中的压力和电功率中的至少一个，使得它们不同 从第一成膜工序，使添加剂金属的浓度与第一合金膜的添加金属的浓度不同。

公开(公告)号：US07968414B2

公开(公告)日：2011-06-28

申请号：US12698303

申请日：2010-02-02

申请人： Hiroyuki Ohta ,  Takashi Sakuma ,  Yosuke Shimamune ,  Akiyoshi Hatada ,  Akira Katakami ,  Naoyoshi Tamura

发明人： Hiroyuki Ohta ,  Takashi Sakuma ,  Yosuke Shimamune ,  Akiyoshi Hatada ,  Akira Katakami ,  Naoyoshi Tamura

IPC分类号： H01L21/8238 ,  H01L21/336

CPC分类号： H01L29/045 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.

公开(公告)号：US20100267796A1

公开(公告)日：2010-10-21

申请号：US12065120

申请日：2007-10-26

申请人： Tsuyoshi Yamagata ,  Kenji Shibata ,  Yoichi Nishiya ,  Takashi Seishi ,  Takashi Sakuma

发明人： Tsuyoshi Yamagata ,  Kenji Shibata ,  Yoichi Nishiya ,  Takashi Seishi ,  Takashi Sakuma

IPC分类号： A61K31/38 ,  C07D495/04 ,  A61K31/4155 ,  A61K31/381 ,  A61P1/00 ,  A61P1/12 ,  A61P1/14

CPC分类号： A61K31/38 ,  A61K31/381 ,  A61K31/4155 ,  C07D495/04

摘要： The present invention provides a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a compound having an adenosine uptake inhibitory activity, a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a tricyclic compound represented by formula (I) [wherein L represents —NHC(═O)— or the like, R1 represents a hydrogen atom, halogen, or the like, X1—X2—X3 represents S—CR7═CR8 (wherein R7 and R8 may be the same or different and each represents a hydrogen atom, halogen, substituted or unsubstituted lower alkyl, or the like), or the like, Y represents —CH2SO2—, —SO2CH2— or the like, R2 represents substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkoxy, substituted or unsubstituted aryl, or the like] or a pharmaceutically acceptable salt thereof, and the like.

摘要翻译： 本发明提供一种肠易激综合征治疗剂，其包含作为活性成分的具有腺苷摄取抑制活性的化合物，用于肠易激综合征的治疗剂，其包含作为活性成分的由式（3）表示的三环化合物 I）[其中L表示-NHC（= O） - 等，R 1表示氢原子，卤素等，X 1 -X 2 -X 3表示S-CR 7 = CR 8（其中R 7和R 8可以相同或 不同，各自表示氢原子，卤素，取代或未取代的低级烷基等）等，Y表示-CH 2 SO 2 - ， - SO 2 CH 2 - 等，R 2表示取代或未取代的低级烷基，取代或未取代的低级 烷氧基，取代或未取代的芳基等）或其药学上可接受的盐等。

公开(公告)号：US20090227104A1

公开(公告)日：2009-09-10

申请号：US11922918

申请日：2006-06-28

申请人： Taro Ikeda ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Takashi Sakuma

发明人： Taro Ikeda ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Takashi Sakuma

IPC分类号： H01L21/768 ,  C23C14/34 ,  C23C14/38

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  H01J37/321 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844

摘要： The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

摘要翻译： 本发明是一种金属膜的成膜方法，包括以下步骤：将处理容器内的台阶上形成有凹部的被处理物放置在其表面; 抽出处理容器以在其中产生真空; 在真空处理容器中电离金属靶，通过由惰性气体制备等离子体形成的等离子体产生包含金属离子的金属颗粒; 并且通过向被放置在台架上的待加工物体施加偏置电力，以将等离子体和金属颗粒拉入待加工物体，刮掉凹部的底部以形成刮削凹部，并且沉积金属膜 在待处理物体的整个表面上，包括凹部和刮削凹槽中的表面。

公开(公告)号：US5423969A

公开(公告)日：1995-06-13

申请号：US217009

申请日：1994-03-23

申请人： Tsuyoshi Masumoto ,  Akihisa Inoue ,  Takashi Sakuma ,  Toshisuke Shibata

发明人： Tsuyoshi Masumoto ,  Akihisa Inoue ,  Takashi Sakuma ,  Toshisuke Shibata

IPC分类号： C22C23/00 ,  C22C45/00 ,  C23F13/00 ,  C23F13/14 ,  C25B11/04

CPC分类号： C23F13/14

摘要： The present invention provides a sacrificial electrode material which consists of a single phase amorphous structure or a structure consisting of an amorphous phase and a crystalline solid solution phase and provides electrochemical corrosion protection to metallic articles exposed to an aqueous electrolytic solution. The electrode material is prepared by rapidly quenching a magnesium-based alloy material from the liquid phase or vapor phase thereof, the magnesium-based alloy material consisting the general formula: Mg.sub.bal X1.sub.a X2.sub.b or Mg.sub.bal X1.sub.a, wherein X1 is at least one element selected from the group consisting of Al, Zn, Ga, Ca and In; X2 is at least one element selected from the group consisting of Mm (misch metal), Y and rare earth metal elements; a and b are, in atomic percentages, 5.0.ltoreq.a.ltoreq.35.0 and 3.0.ltoreq.b.ltoreq.25.0, respectively. The magnesium-based alloy material may further contain one or more transition metal elements in their total contents not exceeding 1.0 atomic %.

摘要翻译： 本发明提供一种牺牲电极材料，其由单相无定形结构或由非晶相和结晶固溶体相组成的结构组成，并且对暴露于水性电解液的金属制品提供电化学腐蚀保护。 通过从其液相或气相快速淬火镁基合金材料制备电极材料，镁基合金材料由以下通式组成：MgbalX1aX2b或MgbalX1a，其中X1是选自以下的至少一种元素： 的Al，Zn，Ga，Ca和In; X2是选自由Mm（混合稀土金属），Y和稀土金属元素组成的组中的至少一种元素; a和b分别为原子百分比为5.0

公开(公告)号：US20130237053A1

公开(公告)日：2013-09-12

申请号：US13876682

申请日：2011-09-26

申请人： Tadahiro Ishizaka ,  Takashi Sakuma ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Toshihiko Fukushima ,  Hiroyuki Toshima ,  Masaya Kawamata ,  Yasushi Mizusawa ,  Takara Kato

发明人： Tadahiro Ishizaka ,  Takashi Sakuma ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Toshihiko Fukushima ,  Hiroyuki Toshima ,  Masaya Kawamata ,  Yasushi Mizusawa ,  Takara Kato

IPC分类号： H01L21/768 ,  H01J37/34

CPC分类号： H01L21/768 ,  C23C14/021 ,  C23C14/024 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/541 ,  C23C14/542 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882

摘要： A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.

摘要翻译： 一种在处理室中从具有等离子体的金属靶产生金属离子的薄膜形成方法，并且在偏压下吸引金属离子以在形成有沟槽的目标物体上沉积金属薄膜。 该方法包括：从靶产生金属离子并以偏压将金属离子吸引到目标物体中，以在沟槽中形成基膜; 在不产生金属离子的状态下以偏压电离稀有气体，并将产生的离子吸引到目标物体中以蚀刻基膜; 并且等离子体溅射靶以产生金属离子并以高频功率将金属离子吸引到物体中以偏压沉积作为金属膜的主膜，同时通过加热回流主膜。

公开(公告)号：US20130005418A1

公开(公告)日：2013-01-03

申请号：US13634052

申请日：2011-03-11

申请人： Tetsuo Ishida ,  Shoki Kogure ,  Takashi Sakuma ,  Satoru Atsuchi

发明人： Tetsuo Ishida ,  Shoki Kogure ,  Takashi Sakuma ,  Satoru Atsuchi

IPC分类号： A63F9/14 ,  H02J7/00

CPC分类号： A63H11/10 ,  A63F3/00082 ,  A63F9/143 ,  A63H17/262 ,  A63H18/14 ,  B60L3/0046 ,  B60L3/04 ,  B60L11/1853 ,  B60L11/1859 ,  B60L11/1866 ,  B60L2200/26 ,  B60L2240/545 ,  B60L2240/547 ,  H02J7/02 ,  H02J7/025 ,  Y02T10/7005 ,  Y02T10/7061

摘要： An electric charging apparatus (5) has a charge mechanism for charging a power supply device inside plural power supply assemblies (30) respectively attached to plural pieces of traveling equipment (10). Furthermore, the electric charging apparatus (5) has an electric power source assembly swapping mechanism (200). The electric power source assembly swapping mechanism (200) dismounts the first electric power source assembly (30) from the traveling equipment (10) and moves it to the charge mechanism, and moves it to mount the second electric power source assembly (30) on traveling equipment from charge mechanism. In addition, the electric power source assembly swapping mechanism (200) dismounts the second electric power source assembly (30) from traveling equipment (10) and moves it to the charge mechanism, and moves it to mount the first electric power source assembly (30) on traveling equipment (10) from charge mechanism.

摘要翻译： 一种充电装置（5）具有用于对分别安装在多个行进装置（10）上的多个电源组件（30）内的电源装置进行充电的充电机构。 此外，充电装置（5）具有电力源组件交换机构（200）。 电源组件交换机构（200）从移动设备（10）卸下第一电力源组件（30）并将其移动到充电机构，并将其移动以将第二电力源组件（30）安装在 运输设备从充电机制。 另外，电力源组件交换机构200将第二电力源组件30从行驶装置（10）拆下并将其移动到充电机构，并移动到第一电力源组件（30） ）在行车设备（10）从充电机制。

公开(公告)号：US08026176B2

公开(公告)日：2011-09-27

申请号：US12223781

申请日：2007-02-09

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/311

CPC分类号： C23C14/046 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883

摘要： A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

摘要翻译： 通过等离子体溅射将金属嵌入设置在处理对象（例如半导体晶片）的表面中的微观凹槽中的技术。 交替进行成膜步骤和扩散步骤。 成膜步骤在凹槽中沉积少量的金属膜。 扩散步骤将沉积的金属膜移向凹部的底部。 在成膜步骤中，施加到用于支撑晶片的载物台的偏置功率被设定为确保在晶片的表面上由于金属颗粒的吸入引起的金属沉积速率基本相等的值 到等离子体的溅射蚀刻速率。 在扩散步骤中，晶片保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。