公开(公告)号：US07323721B2

公开(公告)日：2008-01-29

申请号：US11210847

申请日：2005-08-25

申请人： Shirong Liao ,  Jinlin Ye ,  Theeradetch Detchprohm ,  Jyh-Chia Chen ,  Yea-Chuan Milton Yeh

发明人： Shirong Liao ,  Jinlin Ye ,  Theeradetch Detchprohm ,  Jyh-Chia Chen ,  Yea-Chuan Milton Yeh

IPC分类号： H01L29/201

CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32

摘要： A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.

摘要翻译： 单片，多色半导体发光二极管（LED）由多带隙多量子阱（MQW）有源发光区域形成，该发光区域以间隔开的波长带或范围从紫外到红色的区域发光。 MQW主动发光区域包括包含n个量子势垒的MQW层堆叠，其间隔开n-1个量子阱。 实施例包括其中MQW层堆叠包括用于发射两个不同波长的光的至少两个不同带隙的量子阱，例如在蓝色或绿色区域以及至少一个其它区域中，并且排放的强度被调整为 提供组合发光的预选颜色，优选为白光。

公开(公告)号：US20060049415A1

公开(公告)日：2006-03-09

申请号：US11210847

申请日：2005-08-25

申请人： Shirong Liao ,  Jinlin Ye ,  Theeradetch Detchprohm ,  Jyh-Chia Chen ,  Yea-Chuan Yeh

发明人： Shirong Liao ,  Jinlin Ye ,  Theeradetch Detchprohm ,  Jyh-Chia Chen ,  Yea-Chuan Yeh

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32

摘要： A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.

摘要翻译： 单片，多色半导体发光二极管（LED）由多带隙多量子阱（MQW）有源发光区域形成，该发光区域以间隔开的波长带或范围从紫外到红色的区域发光。 MQW主动发光区域包括包含n个量子势垒的MQW层堆叠，其间隔开n-1个量子阱。 实施例包括其中MQW层堆叠包括用于发射两个不同波长的光的至少两个不同带隙的量子阱，例如在蓝色或绿色区域以及至少一个其它区域中，并且排放的强度被调整为 提供组合发光的预选颜色，优选为白光。

公开(公告)号：US06479313B1

公开(公告)日：2002-11-12

申请号：US09866442

申请日：2001-05-25

申请人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C. C. Fan

发明人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C. C. Fan

IPC分类号： H01L2100

CPC分类号： H01L33/325 ,  H01L21/2683 ,  H01L21/3245 ,  H01L33/0095

摘要： Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

摘要翻译： 用x射线辐射照射化合物半导体材料以活化掺杂剂材料。 主动载流子浓度效率可以通过已知方法，包括常规热退火来改善。 该方法可用于掺杂p型材料的III-V族化合物，包括GaN基半导体，以形成低电阻率p-GaN。 该方法可以进一步用于制造具有改进的正偏压和发光效率的GaN基LED（包括蓝色LED）。

公开(公告)号：US09087951B2

公开(公告)日：2015-07-21

申请号：US13630440

申请日：2012-09-28

申请人： Jinlin Ye ,  Shirong Liao ,  Bo Liao ,  Jie Dong

发明人： Jinlin Ye ,  Shirong Liao ,  Bo Liao ,  Jie Dong

IPC分类号： H01L21/22 ,  H01L31/107 ,  H01L31/18 ,  H01L21/223

CPC分类号： H01L31/107 ,  H01L21/223 ,  H01L21/2233 ,  H01L31/1804 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein the diffusion chamber is under a vacuum condition and a source material therein is heated and evaporated; and diffusing the source material into the diffusion area on said substrate, wherein said source material travels through a diffusion controlling unit adapted to manage the flux thereof in the diffusion chamber, so concentration of the source material is uniform in a diffusion region above the substrate.

摘要翻译： 公开了一种通过控制半导体制造工艺中的扩散路径来管理扩散过程的方法和装置。 在一个实施例中，一种用于处理衬底的方法，包括在所述衬底上形成一个或多个扩散区域的步骤; 将基板设置在扩散室中，其中扩散室处于真空状态，并且其中的源材料被加热并蒸发; 并且将所述源材料扩散到所述衬底上的扩散区域中，其中所述源材料行进通过扩散控制单元，所述扩散控制单元适于管理其在扩散室中的通量，因此源材料的浓度在衬底上方的扩散区域中是均匀的。

公开(公告)号：US20190019903A1

公开(公告)日：2019-01-17

申请号：US16036824

申请日：2018-07-16

申请人： Jinlin Ye ,  Shirong Liao

发明人： Jinlin Ye ,  Shirong Liao

IPC分类号： H01L31/0232 ,  H01L31/107 ,  H01L31/0288 ,  H01L31/18 ,  H01L31/105 ,  G02B6/136

摘要： A method for manufacturing an integrated avalanche photodetector comprising steps of providing a silicon-insulator substrate including a top layer, an insulator layer and a base layer; partially removing the top layer to form an optical waveguide over the insulator layer; forming an opening at least through the cladding layer and the insulator layer extending to a first portion of the base layer; and forming an avalanche photodetector over the first portion of the base layer at least in the opening and optically coupled to the waveguide. In one embodiment, the avalanche photodetector is butt-coupled to the optical waveguide. In another embodiment, the avalanche photodetector is evanescently coupled to the optical waveguide.

公开(公告)号：US08796749B2

公开(公告)日：2014-08-05

申请号：US13586435

申请日：2012-08-15

申请人： Shirong Liao ,  Jinlin Ye ,  Bo Liao ,  Jie Dong

发明人： Shirong Liao ,  Jinlin Ye ,  Bo Liao ,  Jie Dong

IPC分类号： H01L31/0236

CPC分类号： H01L31/02327 ,  H01L31/1075

摘要： A high-speed photodiode may include a photodiode structure having a substrate, a light-absorbing layer and a light-directing layer that is deposited on a top surface of the photodiode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the photodiode structure. In one embodiment, the light-directing layer may include a plurality of polygon such as triangular projections to refract the incident light to increase the light path thereof when entering the photodiode structure. In another embodiment, a plurality of nanoscaled sub-triangular projections can patterned on both sides of each triangular projection to more effectively increase the light paths. In a further embodiment, porous materials can be used to form the light-directing layer.

摘要翻译： 高速光电二极管可以包括光电二极管结构，其具有衬底，光吸收层和导光层，其沉积在光电二极管结构的顶表面上并被图案化以形成用于改变入射角的纹理表面 光进入光电二极管结构时增加入射光的光路。 在一个实施例中，导光层可以包括多个多边形，例如三角形突起，以折射入射光，以在进入光电二极管结构时增加其光路。 在另一个实施例中，可以在每个三角形投影的两侧上形成多个纳米级的三角形突起，以更有效地增加光路。 在另一实施例中，多孔材料可用于形成光导层。

公开(公告)号：US20190019902A1

公开(公告)日：2019-01-17

申请号：US16035572

申请日：2018-07-13

申请人： Jinlin Ye ,  Shirong Liao

发明人： Jinlin Ye ,  Shirong Liao

IPC分类号： H01L31/0232 ,  G02B6/136 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

摘要： A method for manufacturing an integrated photodetector may include steps of providing a silicon-insulator substrate including a top layer, an insulator layer, and a base layer; partially removing the top layer to form an optical waveguide over the insulator layer; forming an opening at least through the cladding layer and the insulator layer extending to a first portion of the base layer; and epitaxially growing a lattice-mismatched semiconductor layer over the first portion of the base layer at least in the opening, at least a portion of the semiconductor layer extending above the insulator layer to form a photodetector including an intrinsic region optically coupled to the waveguide. In one embodiment, the intrinsic region of the photodetector is butt-coupled to the optical waveguide. In another embodiment, the intrinsic region of the photodetector is evanescently coupled to the optical waveguide.

公开(公告)号：US20140050492A1

公开(公告)日：2014-02-20

申请号：US13586435

申请日：2012-08-15

申请人： Shirong Liao ,  Jinlin Ye ,  Bo Liao ,  Jie Dong

发明人： Shirong Liao ,  Jinlin Ye ,  Bo Liao ,  Jie Dong

IPC分类号： H01L31/0236 ,  H04B10/14

CPC分类号： H01L31/02327 ,  H01L31/1075

摘要： A high-speed photodiode may include a photodiode structure having a substrate, a light-absorbing layer and a light-directing layer that is deposited on a top surface of the photodiode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the photodiode structure. In one embodiment, the light-directing layer may include a plurality of polygon such as triangular projections to refract the incident light to increase the light path thereof when entering the photodiode structure. In another embodiment, a plurality of nanoscaled sub-triangular projections can patterned on both sides of each triangular projection to more effectively increase the light paths. In a further embodiment, porous materials can be used to form the light-directing layer.

摘要翻译： 高速光电二极管可以包括光电二极管结构，其具有衬底，光吸收层和导光层，其沉积在光电二极管结构的顶表面上并被图案化以形成用于改变入射角的纹理表面 光进入光电二极管结构时增加入射光的光路。 在一个实施例中，导光层可以包括多个多边形，例如三角形突起，以折射入射光，以在进入光电二极管结构时增加其光路。 在另一个实施例中，可以在每个三角形投影的两侧上形成多个纳米级的三角形突起，以更有效地增加光路。 在另一实施例中，多孔材料可用于形成光导层。

公开(公告)号：US20140093996A1

公开(公告)日：2014-04-03

申请号：US13630440

申请日：2012-09-28

申请人： Jinlin Ye ,  Shirong Liao ,  Bo Liao ,  Jie Dong

发明人： Jinlin Ye ,  Shirong Liao ,  Bo Liao ,  Jie Dong

IPC分类号： H01L21/223 ,  H01L31/18

CPC分类号： H01L31/107 ,  H01L21/223 ,  H01L21/2233 ,  H01L31/1804 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein the diffusion chamber is under a vacuum condition and a source material therein is heated and evaporated; and diffusing the source material into the diffusion area on said substrate, wherein said source material travels through a diffusion controlling unit adapted to manage the flux thereof in the diffusion chamber, so concentration of the source material is uniform in a diffusion region above the substrate.

摘要翻译： 公开了一种通过控制半导体制造工艺中的扩散路径来管理扩散过程的方法和装置。 在一个实施例中，一种用于处理衬底的方法，包括在所述衬底上形成一个或多个扩散区域的步骤; 将基板设置在扩散室中，其中扩散室处于真空状态，并且其中的源材料被加热并蒸发; 并且将所述源材料扩散到所述衬底上的扩散区域中，其中所述源材料行进通过扩散控制单元，所述扩散控制单元适于管理其在扩散室中的通量，因此源材料的浓度在衬底上方的扩散区域中是均匀的。

公开(公告)号：US08897606B2

公开(公告)日：2014-11-25

申请号：US12928076

申请日：2010-12-01

申请人： Mehdi Asghari ,  Dazeng Feng ,  Po Dong ,  Roshanak Shafiiha ,  Shirong Liao ,  Ning-Ning Feng

发明人： Mehdi Asghari ,  Dazeng Feng ,  Po Dong ,  Roshanak Shafiiha ,  Shirong Liao ,  Ning-Ning Feng

IPC分类号： G02F1/225 ,  G02B6/26

CPC分类号： G02F1/2257 ,  G02F2201/122 ,  G02F2203/15

摘要： The ring resonator includes waveguides configured to guide light signals. The waveguides include an input waveguide and one or more loop waveguides. One of the loop waveguides is a primary loop waveguide that is optically coupled with the input waveguide at a wavelength of light. A tuner is configured to tune the wavelength at which the light is optically coupled from the input waveguide into the primary loop waveguide. One or more light detectors are each configured to provide an output indicating an intensity of light guided in one of the one or more loop waveguides. Electronics are configured to tune the tuner in response to the output from the light detector.

摘要翻译： 环形谐振器包括被配置为引导光信号的波导。 波导包括输入波导和一个或多个环形波导。 环路波导之一是在波长为光的情况下与输入波导光耦合的主要环路波导。 调谐器被配置为调节光从输入波导光耦合到主环形波导中的波长。 一个或多个光检测器被配置为提供指示在一个或多个环形波导之一中引导的光的强度的输出。 电子设备被配置为响应于来自光检测器的输出来调谐调谐器。