公开(公告)号：US20150236359A1

公开(公告)日：2015-08-20

申请号：US14621612

申请日：2015-02-13

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Takashi IKEJIRI

IPC分类号： H01M8/02 ,  C23C16/44 ,  C23C16/458 ,  C23C16/48

CPC分类号： H01M8/0267 ,  C01B13/10 ,  C23C16/4412 ,  C23C16/4583 ,  C23C16/482 ,  H01J37/32339 ,  H01J37/32357 ,  H01L21/268 ,  H01L21/2683 ,  H01L21/2686 ,  H01L21/67115 ,  Y02P70/56

摘要： The invention is equipped with a hydrophilic group generating gas supply portion, an installation stand, an irradiation device, and a flow generation portion. The hydrophilic group generating gas supply portion supplies a hydrophilic group generating gas into the treatment chamber. The installation stand is equipped with an installation plate and a support member. The installation plate has a ventilation portion, and the support member is provided protrusively from the installation plate, and supports the workpiece with an air gap left between the workpiece and the installation plate. The irradiation device irradiates the workpiece with an energy wave that induces activation of the hydrophilic group generating gas. The flow generation portion generates a flow of at least part of the activated hydrophilic group generating gas such that the hydrophilic group generating gas flows via the ventilation portion of the installation plate and flows around into the air gap.

摘要翻译： 本发明配备有亲水组发生气体供给部，安装台，照射装置和流动产生部。 亲水性基团发生气体供给部将亲水性基团发生气体供给到处理室。 安装台配有安装板和支撑构件。 安装板具有通风部分，并且支撑构件从安装板突出地设置，并且在工件和安装板之间留有气隙的情况下支撑工件。 照射装置用引起亲水性基团发生气体的活化的能量波长照射工件。 流动产生部分产生至少部分活化的亲水基团产生气体的流动，使得亲水基团产生气体经由安装板的通风部分流动并流入气隙。

公开(公告)号：US20080099769A1

公开(公告)日：2008-05-01

申请号：US11924093

申请日：2007-10-25

申请人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L21/0495 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/2683 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872

摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

摘要翻译： 公开了一种包括SiC上电接触的集成电路的生产。 一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

公开(公告)号：US5219773A

公开(公告)日：1993-06-15

申请号：US803691

申请日：1991-12-03

申请人： Gregory J. Dunn

发明人： Gregory J. Dunn

IPC分类号： H01L21/263 ,  H01L21/268 ,  H01L21/28 ,  H01L21/314 ,  H01L21/336 ,  H01L29/51

CPC分类号： H01L21/28185 ,  H01L21/263 ,  H01L21/2683 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518 ,  H01L29/66825 ,  Y10S438/91

摘要： A method of fabricating a field-effect device having a gate dielectric of reoxidized nitrided oxide (RNO) provides an inversion layer mobility much higher than that of conventional RNO devices. A conductivity structure such as a metal oxide semiconductor field-effect transistor (MOSFET) is formed in a semiconductor substrate and provided with a gate dielectric of RNO. The formation of the device may or may not make use of rapid thermal processing techniques. Once formed, the device is irradiated with ionizing radiation. A voltage potential may be maintained across the gate dielectric during irradiation to further improve the inversion layer mobility. Post-radiation annealing is then performed at a controlled temperature.

摘要翻译： 制备具有再氧化氮化氧化物（RNO）的栅极电介质的场效应器件的方法提供了远高于常规RNO器件的反型层迁移率。 在半导体衬底中形成诸如金属氧化物半导体场效应晶体管（MOSFET）的导电结构，并且设置有RNO的栅极电介质。 该装置的形成可以使用也可以不使用快速热处理技术。 一旦形成，用电离辐射照射该装置。 在照射期间可以在栅极电介质两端保持电压电位，以进一步提高反型层迁移率。 然后在受控温度下进行后辐射退火。

公开(公告)号：US11881407B2

公开(公告)日：2024-01-23

申请号：US17463243

申请日：2021-08-31

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  DISCO Corporation

发明人： Masatake Nagaya ,  Teruaki Kumazawa ,  Yuji Nagumo ,  Kazuya Hirata ,  Asahi Nomoto

IPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/02

CPC分类号： H01L21/2683 ,  H01L21/02447 ,  H01L21/7813

摘要： A method of manufacturing a chip formation wafer includes: forming an epitaxial film on a first main surface of a silicon carbide wafer to provide a processed wafer having one side adjacent to the epitaxial film and the other side; irradiating a laser beam into the processed wafer from the other side of the processed wafer so as to form an altered layer along a surface direction of the processed wafer; and separating the processed wafer with the altered layer as a boundary into a chip formation wafer having the one side of the processed wafer and a recycle wafer having the other side of the processed wafer. The processed wafer has a beveling portion at an outer edge portion of the processed wafer, and an area of the other side is larger than an area of the one side in the beveling portion.

公开(公告)号：US09780390B2

公开(公告)日：2017-10-03

申请号：US14621612

申请日：2015-02-13

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Takashi Ikejiri

IPC分类号： C23C16/44 ,  H01L21/268 ,  H01L21/67 ,  H01J37/32 ,  C23C16/458 ,  C23C16/48 ,  H01M8/0267 ,  C01B13/10

CPC分类号： H01M8/0267 ,  C01B13/10 ,  C23C16/4412 ,  C23C16/4583 ,  C23C16/482 ,  H01J37/32339 ,  H01J37/32357 ,  H01L21/268 ,  H01L21/2683 ,  H01L21/2686 ,  H01L21/67115 ,  Y02P70/56

摘要： The invention is equipped with a hydrophilic group generating gas supply portion, an installation stand, an irradiation device, and a flow generation portion. The hydrophilic group generating gas supply portion supplies a hydrophilic group generating gas into the treatment chamber. The installation stand is equipped with an installation plate and a support member. The installation plate has a ventilation portion, and the support member is provided protrusively from the installation plate, and supports the workpiece with an air gap left between the workpiece and the installation plate. The irradiation device irradiates the workpiece with an energy wave that induces activation of the hydrophilic group generating gas. The flow generation portion generates a flow of at least part of the activated hydrophilic group generating gas such that the hydrophilic group generating gas flows via the ventilation portion of the installation plate and flows around into the air gap.

公开(公告)号：US07611968B2

公开(公告)日：2009-11-03

申请号：US11984532

申请日：2007-11-19

申请人： Satoshi Kobayashi

发明人： Satoshi Kobayashi

IPC分类号： H01L21/00

CPC分类号： H01L21/2683 ,  B23K26/40 ,  B23K2103/50

摘要： A wafer laser processing method for forming deteriorated layers in the inside of a wafer having devices which are formed in a plurality of areas sectioned by a plurality of streets formed in a lattice pattern on the front surface along the streets by applying a laser beam along the streets, comprising: a first deteriorated layer forming step for forming a first deteriorated layer along the streets near the front surface of the wafer by applying a laser beam having a wavelength of 1,064 nm from the rear surface side of the wafer along the streets with its focal spot set to a position near the front surface of the wafer; and a second deteriorated layer forming step for forming a second deteriorated layer along the streets at a position closer to the rear surface of the wafer than the first deteriorated layer by applying a laser beam having a wavelength of 1,342 nm from the rear surface side of the wafer along the streets with its focal spot set to a position closer to the rear surface than the first deteriorated layer.

摘要翻译： 一种用于在晶片内部形成劣化层的晶片激光加工方法，其具有形成在沿着街道形成为格子状的多个街道的多个区域的多个区域中，所述多个区域沿着沿着街道的方式施加激光束 街道，其包括：第一劣化层形成步骤，用于通过沿着所述街道从所述晶片的后表面侧施加具有波长为1,064nm的波长的激光，沿着所述晶片的前表面的街道形成第一劣化层 焦点设置在靠近晶片前表面的位置; 以及第二劣化层形成步骤，用于通过从所述第一劣化层的背面侧施加波长为1342nm的激光，沿着所述街道在比所述第一劣化层更靠近所述晶片的后表面的位置形成第二劣化层 晶片沿着街道，其焦点设置为比第一劣化层更靠近后表面的位置。

公开(公告)号：US20170200610A1

公开(公告)日：2017-07-13

申请号：US15443603

申请日：2017-02-27

申请人： Infineon Technologies Austria AG

发明人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L21/04 ,  H01L21/268 ,  H01L21/02 ,  H01L29/66 ,  H01L29/872 ,  H01L29/16 ,  H01L29/47

CPC分类号： H01L21/0495 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/2683 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872

摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

公开(公告)号：US20150041831A1

公开(公告)日：2015-02-12

申请号：US14525243

申请日：2014-10-28

申请人： Infineon Technologies Austria AG

发明人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L29/16 ,  H01L29/45 ,  H01L29/417

CPC分类号： H01L21/0495 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/2683 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872

摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

摘要翻译： 公开了一种包括SiC上电接触的集成电路的生产。 一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

公开(公告)号：US20130193449A1

公开(公告)日：2013-08-01

申请号：US13802875

申请日：2013-03-14

申请人： Infineon Technologies Austria AG

发明人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L21/04 ,  H01L29/47

CPC分类号： H01L21/0495 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/2683 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872

摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

公开(公告)号：US20020177251A1

公开(公告)日：2002-11-28

申请号：US09866442

申请日：2001-05-25

申请人： Kopin Corporation

发明人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C.C. Fan

IPC分类号： H01L021/00

CPC分类号： H01L33/325 ,  H01L21/2683 ,  H01L21/3245 ,  H01L33/0095

摘要： Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

摘要翻译： 用x射线辐射照射化合物半导体材料以活化掺杂剂材料。 主动载流子浓度效率可以通过已知方法，包括常规热退火来改善。 该方法可用于掺杂p型材料的III-V族化合物，包括GaN基半导体，以形成低电阻率p-GaN。 该方法可以进一步用于制造具有改进的正偏压和发光效率的GaN基LED（包括蓝色LED）。