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公开(公告)号：US07323721B2
公开(公告)日：2008-01-29
申请号：US11210847
申请日：2005-08-25
IPC分类号： H01L29/201
摘要： A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.
摘要翻译： 单片，多色半导体发光二极管（LED）由多带隙多量子阱（MQW）有源发光区域形成，该发光区域以间隔开的波长带或范围从紫外到红色的区域发光。 MQW主动发光区域包括包含n个量子势垒的MQW层堆叠，其间隔开n-1个量子阱。 实施例包括其中MQW层堆叠包括用于发射两个不同波长的光的至少两个不同带隙的量子阱，例如在蓝色或绿色区域以及至少一个其它区域中，并且排放的强度被调整为 提供组合发光的预选颜色，优选为白光。
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公开(公告)号：US20060049415A1
公开(公告)日：2006-03-09
申请号：US11210847
申请日：2005-08-25
IPC分类号： H01L33/00
摘要： A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.
摘要翻译： 单片，多色半导体发光二极管（LED）由多带隙多量子阱（MQW）有源发光区域形成，该发光区域以间隔开的波长带或范围从紫外到红色的区域发光。 MQW主动发光区域包括包含n个量子势垒的MQW层堆叠，其间隔开n-1个量子阱。 实施例包括其中MQW层堆叠包括用于发射两个不同波长的光的至少两个不同带隙的量子阱，例如在蓝色或绿色区域以及至少一个其它区域中，并且排放的强度被调整为 提供组合发光的预选颜色，优选为白光。
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3.发明申请Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy 审中-公开使用金属有机气相外延的III族金属 - 氮化物材料生长的方法公开(公告)号：US20110254134A1
公开(公告)日：2011-10-20
申请号：US13087614
申请日：2011-04-15
CPC分类号： H01L21/0242 , C30B25/02 , C30B29/403 , H01L21/02433 , H01L21/02439 , H01L21/0254 , H01L21/0262 , Y10T156/11
摘要： The non-polar or semi-polar Nitride film is grown using Metal Organic Vapor Phase Epitaxy over a substrate. The in-situ grown seed layer comprising Magnesium and Nitrogen is deposited prior to the Nitride film growth. The said seed layer enhances the crystal growth of the Nitride material and makes it suitable for electronics and optoelectronics applications. The use of non-polar and/or semi-polar epitaxial films of the Nitride materials allows avoiding the unwanted effects related to polarization fields and associated interface and surface charges, thus significantly improving the semiconductor device performance and efficiency. In addition, the said seed layer is also easily destroyable by physical or chemical stress, including the ability to dissolve in water or acid, which makes the substrate removal process available and easy. The substrate removal provides the possibility to achieve exceptional thermal conductivity and application flexibility, such as additional contact formation, electromagnetic radiation extraction, packaging or other purposes suggested or discovered by the skilled artisan.
摘要翻译： 使用金属有机气相外延在基材上生长非极性或半极性氮化物膜。 在氮化物膜生长之前沉积包含镁和氮的原位生长种子层。 所述种子层增强了氮化物材料的晶体生长，使其适用于电子和光电应用。 使用氮化物材料的非极性和/或半极性外延膜允许避免与极化场和相关界面和表面电荷相关的不期望的影响，从而显着提高半导体器件的性能和效率。 此外，所述种子层也容易被物理或化学应力破坏，包括溶解在水或酸中的能力，这使得基材去除过程可用和容易。 基板去除提供了获得卓越的导热性和应用灵活性的可能性，例如附加接触形成，电磁辐射提取，包装或本领域技术人员建议或发现的其它目的。
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公开(公告)号：US20120052679A1
公开(公告)日：2012-03-01
申请号：US13222800
申请日：2011-08-31
IPC分类号： H01L21/28
CPC分类号： H01L21/28575 , H01L29/2003 , H01L2933/0016
摘要： A method of providing a metal contact to n-type Gallium Nitride is disclosed. The method does not require high temperatures that often lead to a degradation of semiconductor materials, dielectric films, interfaces and/or metal-semiconductor junctions. The method can be applied at practically any step of a semiconductor device fabrication process and results in high quality ohmic contact with low contact resistance and high current handling capability. Present invention significantly simplifies the fabrication process of semiconductor devices, such as Gallium Nitride-based Light Emitting Diodes and Laser Diodes, while improving the resulting performance of the said devices. The invention can also be applied to improve the performance of electronic devices based on Gallium Nitride material system, especially where an additional annealing step is beneficial during the fabrication process.
摘要翻译： 公开了一种向n型氮化镓提供金属接触的方法。 该方法不需要经常导致半导体材料，介电膜，界面和/或金属 - 半导体结的降解的高温。 该方法可以应用于半导体器件制造工艺的几乎任何步骤，并且导致具有低接触电阻和高电流处理能力的高质量欧姆接触。 本发明显着简化了诸如基于氮化镓的发光二极管和激光二极管等半导体器件的制造工艺，同时改善了所述器件的性能。 本发明也可以应用于提高基于氮化镓材料系统的电子器件的性能，特别是在制造过程中额外的退火步骤是有益的。
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公开(公告)号：US20110042709A1
公开(公告)日：2011-02-24
申请号：US12857760
申请日：2010-08-17
IPC分类号： H01L33/62
CPC分类号： F21K9/232 , F21Y2115/10
摘要： The current invention introduces a semiconductor light emitting device mounted in a free-standing way for enhanced light extraction and handling simplicity. The free-standing mount is based on the mechanical strength of the current carrying connectors, such as wires or bonds. Such mounted LED die can be placed into standard light bulb body for compatibility with existing household, car, consumer electronics or industrial light sources. The current invention provides increased light extraction efficiency which makes general LED lighting simpler and cheaper. The mounting into a conventional light bulb provides the consumer with the ease of handling and mounting.
摘要翻译： 本发明引入了以独立方式安装的半导体发光器件，用于增强光提取和处理简单性。 独立式安装座基于载流连接器的机械强度，例如电线或接头。 这种安装的LED管芯可以放置在标准的灯泡体中，以与现有的家用，汽车，消费电子产品或工业光源兼容。 本发明提供了增加的光提取效率，这使得一般的LED照明更简单和便宜。 安装到传统的灯泡中为消费者提供了便于处理和安装。
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6.发明授权Method for producing group III nitride compound semiconductor substrates using ZnO release layers 失效使用ZnO剥离层的III族氮化物化合物半导体基板的制造方法
公开(公告)号：US5846844A
公开(公告)日：1998-12-08
申请号：US598134
申请日：1996-02-07
IPC分类号： H01L21/20 , H01L21/363 , H01L21/84 , H01L33/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02664 , H01L21/84 , H01L33/007 , Y10S117/915 , Y10S148/065 , Y10S148/113 , Y10S148/135
摘要： A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.
摘要翻译： 满足式Al x Ga y In 1-x-y N，包括x = 0，y = 0和x = y = 0的氮 - 基III族化合物半导体及其制造方法包括以下步骤：形成氧化锌（ZnO） 在中间ZnO层上形成满足式Al x Ga y In 1-x-y N的氮基III半导体层，包括x = 0，y = 0和x = y = 0，并分离中间体ZnO 通过仅用于ZnO层的蚀刻液进行湿法蚀刻。
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7.发明申请Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy 审中-公开使用气相外延的金属基底上的氮化镓生长方法公开(公告)号：US20110117376A1
公开(公告)日：2011-05-19
申请号：US12947409
申请日：2010-11-16
CPC分类号： C30B25/183 , C30B29/403 , Y10T428/31678
摘要： The current invention introduces a method of crystal film's growth of Gallium Nitride and related alloys over a novel class of the substrates using Vapor Phase Epitaxy technique. This said novel class of the substrates comprises single crystal lattice matched, partially matched or mismatched metallic substrates. The use of such substrates provides exceptional thermal conductivity and application flexibility, since they can be easily removed or patterned by chemical etching for the purposes of additional contact formation, electromagnetic radiation extraction, packaging or other purposes suggested or discovered by the skilled artisan. In particular, if patterned, the remaining portions of the said substrates can be utilized as contacts to the semiconductor layers grown on them. In addition, the said metallic substrates are significantly more cost effective than most of the conventional substrates. The use of Vapor Phase Epitaxy allows growing the epitaxial layers with different and/or variable alloy composition, as well as heterostructures and superlattices.
摘要翻译： 本发明使用气相外延技术引入了一种使用新一类衬底的氮化镓和相关合金晶体膜生长的方法。 这说明新颖的基片包括单晶格子匹配，部分匹配或错配的金属基片。 使用这种基板提供了出色的导热性和应用灵活性，因为为了额外的接触形成，电磁辐射提取，包装或本领域技术人员建议或发现的其它目的，它们可以通过化学蚀刻容易地去除或图案化。 特别地，如果被图案化，则所述基板的剩余部分可以用作在其上生长的半导体层的接触。 此外，所述金属基底比大多数常规基底显着地更具成本效益。 使用气相外延允许以不同的和/或可变的合金组成以及异质结构和超晶格生长外延层。
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