Multi-surfaced rotary stamping apparatus
    1.
    发明授权
    Multi-surfaced rotary stamping apparatus 失效
    多面旋转冲压装置

    公开(公告)号:US4939990A

    公开(公告)日:1990-07-10

    申请号:US357765

    申请日:1989-05-26

    IPC分类号: B41K1/04 B41K1/08 B41K1/12

    CPC分类号: B41K1/04 B41K1/08 B41K1/12

    摘要: The present invention provides a rotary stamping apparatus including a shaft member having a polygonal configuration in a cross-section perpendicular to its axis of rotation and holding a plurality of stamp cartridges faced outwardly; a gripper case for supporting the shaft member at its opposite sides, the gripper case having an invert U-shaped configuration in cross-section; an elevator frame slidably mounted within the gripper case and movable between an outer position in which the outer end of the elevator frame is positioned outwardly from a plane including one of the stamp cartridges located in its usable position and an inner position in which the elevator frame is retracted inwardly from the plane, the elevator frame being resiliently biased toward the outer position; a selector knob for rotating the shaft member to the desired position; and each of the stamp cartridges being capable of being detachably mounted on the shaft member by sliding the stamp cartridge in the plane of rotation of the shaft member.

    摘要翻译: 本发明提供了一种旋转冲压装置,其包括:轴构件,其具有垂直于其旋转轴线的横截面中的多边形构型,并且保持朝向外侧的多个冲压筒; 用于在其相对侧支撑轴构件的夹持器壳体,所述夹持器壳体具有横截面的倒U形构造; 电梯架可滑动地安装在夹持器壳体内并且可在外部位置之间移动,外部位置中,电梯框架的外端从包括位于其可用位置中的一个印记盒的平面向外定位,以及内部位置, 从平面向内缩回,电梯架被弹性偏压到外部位置; 用于将轴构件旋转到期望位置的选择旋钮; 并且每个印章盒能够通过在冲压件的轴构件的旋转平面中滑动而可拆卸地安装在轴构件上。

    Lead-free solder alloy and preparation thereof
    2.
    发明申请
    Lead-free solder alloy and preparation thereof 审中-公开
    无铅焊料合金及其制备方法

    公开(公告)号:US20050260095A1

    公开(公告)日:2005-11-24

    申请号:US11132228

    申请日:2005-05-19

    申请人: Masayuki Hasegawa

    发明人: Masayuki Hasegawa

    IPC分类号: B23K35/26 C22C13/02

    CPC分类号: B23K35/262

    摘要: The invention relates to a lead-free solder alloy including 1 to 15 percent by weight of Bi, 0.01 to 2 percent by weight of Sb, 0.001 to 2 percent by weight of Co, and the balance percent of Sn, so as to make the individual amounts of Bi, Sb, Co and Sn summing up to 100% by weight, in which Sb is substantially present as a solid solution with Bi. The alloy is prepared by solidifying a melt obtained by melting Bi together with Sb to give a mother alloy of Bi and Sb, i.e. the solid solution of Bi and Sb, and then solidifying a melt obtained by melting the mother alloy of Bi and Sb together with Sn and Co. The lead-free solder alloy according to the present invention has high tensile strength and low melting temperature. Furthermore, the alloy displays improved performance in practical characteristics such as wettability, thermal shock resistance, and is inexpensive.

    摘要翻译: 本发明涉及一种无铅焊料合金,其包含1至15重量%的Bi,0.01至2重量%的Sb,0.001至2重量%的Co和余量的Sn,以使 单个量的Bi,Sb,Co和Sn总计高达100重量%,其中Sb以Bi作为固溶体基本存在。 通过使与Bi一起熔融Bi而获得的熔融物固化而得到Bi和Sb的母合金即Bi和Sb的固溶体,然后使通过将Bi和Sb的母合金熔融在一起熔融而得到的熔体固化,从而制备合金 使用Sn和Co。根据本发明的无铅焊料合金具有高拉伸强度和低熔融温度。 此外,合金在润湿性,耐热冲击性等实用特性方面表现出改善的性能,并且价格便宜。

    Cap for writing implement with air vent and guide
    3.
    发明授权
    Cap for writing implement with air vent and guide 失效
    用空气通风和指导书写执行资料

    公开(公告)号:US5203637A

    公开(公告)日:1993-04-20

    申请号:US826853

    申请日:1992-01-28

    IPC分类号: B29C33/00 B43K23/12

    摘要: A cap for a writing implement comprises an outer cap having open top and bottom ends with an inner cap having at its top a closed end and at its bottom an open end and coaxially connected to the outer cap by means of a plurality of radially extending ribs to define openings between the outer and inner caps. Flange elements are disposed below the openings for preventing the writing tip from entering the openings and guiding it toward the inner cap, the flange opening elements being circumferentially spaced apart from one another by means of slits in alignment with the ribs.

    摘要翻译: 用于书写工具的帽包括外盖,其具有开放的顶部和底部端部,其内部顶盖具有封闭端,并且在其底部具有开口端,并且借助于多个径向延伸的肋部同轴地连接到外盖 以限定外盖和内盖之间的开口。 法兰元件设置在开口下方,用于防止书写尖端进入开口并将其引向内盖,凸缘开口元件通过与肋对准的狭缝彼此周向间隔开。

    Batch CVD method and apparatus for semiconductor process
    4.
    发明授权
    Batch CVD method and apparatus for semiconductor process 有权
    分批CVD法和半导体工艺装置

    公开(公告)号:US08461059B2

    公开(公告)日:2013-06-11

    申请号:US12838911

    申请日:2010-07-19

    IPC分类号: H01L21/473

    摘要: A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.

    摘要翻译: 分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。 通过首先将源气体阀开启第一时间段,然后将源气体阀关闭而将源气体供应到处理容器中,同时将原料气体供给到处理容器中,同时通过保持反应气体阀 关闭,并且不通过保持排气阀关闭从处理容器内部排出气体。 通过将源气体阀保持关闭,同时通过将反应性气体阀打开而将反应性气体供给到处理容器中,并且通过将处理容器内的气体排出到处理容器内部来排出气体,从而进行反应步骤, 排气阀从预定的打开状态逐渐减小阀开度。

    BATCH CVD METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS
    6.
    发明申请
    BATCH CVD METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS 有权
    BATCH CVD方法和半导体工艺的设备

    公开(公告)号:US20110021033A1

    公开(公告)日:2011-01-27

    申请号:US12838911

    申请日:2010-07-19

    IPC分类号: H01L21/46

    摘要: A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.

    摘要翻译: 分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。 通过首先将源气体阀开启第一时间段,然后将源气体阀关闭而将源气体供应到处理容器中,同时将原料气体供给到处理容器中,同时通过保持反应气体阀 关闭,并且不通过保持排气阀关闭从处理容器内部排出气体。 通过将源气体阀保持关闭,同时通过将反应性气体阀打开而将反应性气体供给到处理容器中,并且通过将处理容器内的气体排出到处理容器内部来排出气体,进行反应步骤, 排气阀从预定的打开状态逐渐减小阀开度。

    Network monitoring method and apparatus
    7.
    发明授权
    Network monitoring method and apparatus 有权
    网络监控方法和设备

    公开(公告)号:US07430688B2

    公开(公告)日:2008-09-30

    申请号:US11004000

    申请日:2004-12-03

    IPC分类号: G06F11/00

    摘要: A network monitoring method and system reduces a load to a monitoring network without deteriorating accuracy of detecting a malfunction. A plurality of network constituent elements that constitute a communication network are connected to an operation system through a monitoring network. A health check for detecting a malfunction is periodically performed between a group of the network constituent elements positioned closed to each other within the communication network at a short monitoring period. A health check of malfunction detection on all of the network constituent elements is performed by the operation system at a long monitoring period longer than the short monitoring period.

    摘要翻译: 网络监控方法和系统可以减少对监控网络的负担,而不会降低检测故障的准确性。 构成通信网络的多个网络构成要素通过监控网络连接到操作系统。 在短的监视周期内,在通信网络内彼此关闭的一组网络组成元件周期性地执行用于检测故障的健康检查。 所有网络构成要素的故障检测的健康检查由操作系统在比短监视期间长的监视期间进行。

    Network monitoring method and apparatus
    8.
    发明申请
    Network monitoring method and apparatus 有权
    网络监控方法和设备

    公开(公告)号:US20060085680A1

    公开(公告)日:2006-04-20

    申请号:US11004000

    申请日:2004-12-03

    IPC分类号: G06F11/00

    摘要: A network monitoring method and system reduces a load to a monitoring network without deteriorating accuracy of detecting a malfunction. A plurality of network constituent elements that constitute a communication network are connected to an operation system through a monitoring network. A health check for detecting a malfunction is periodically performed between a group of the network constituent elements positioned closed to each other within the communication network at a short monitoring period. A health check of malfunction detection on all of the network constituent elements is performed by the operation system at a long monitoring period longer than the short monitoring period.

    摘要翻译: 网络监控方法和系统可以减少对监控网络的负担,而不会降低检测故障的准确性。 构成通信网络的多个网络构成要素通过监控网络连接到操作系统。 在短的监视周期内,在通信网络内彼此关闭的一组网络组成元件周期性地执行用于检测故障的健康检查。 所有网络构成要素的故障检测的健康检查由操作系统在比短监视期间长的监视期间进行。

    Method for purifying chlorosilanes
    9.
    发明授权
    Method for purifying chlorosilanes 有权
    氯硅烷净化方法

    公开(公告)号:US09126838B2

    公开(公告)日:2015-09-08

    申请号:US13822673

    申请日:2011-09-02

    IPC分类号: C01B33/08 C01B33/107

    摘要: The method comprises at least three steps of a hydrogenation step (101) and/or a chlorination step (102), an impurity conversion step (103), and a purification step (104). In the impurity conversion step (103), an aldehyde compound represented by the general formula Ar—R—CHO (Ar; denotes a substituted or unsubstituted aryl group, R; denotes an organic group having two or more carbon atoms) is added to convert donor impurities and acceptor impurities contained in a chlorosilane distillate to a high-boiling substance. The chlorosilane distillate after the donor impurities and acceptor impurities have been converted to a high-boiling substance is sent to the purification step (104). In the purification step (104), high purity chlorosilanes from which the donor impurities and acceptor impurities have been thoroughly removed are obtained by using a distillation column or the like, where the high purity chlorosilanes are recovered outside the system from the top of the column.

    摘要翻译: 该方法包括氢化步骤(101)和/或氯化步骤(102),杂质转化步骤(103)和纯化步骤(104)的至少三个步骤。 在杂质转化步骤(103)中,添加由通式Ar-R-CHO(Ar;表示取代或未取代的芳基R表示具有两个或更多个碳原子的有机基团)表示的醛化合物以转化 供体杂质和包含在氯硅烷馏出物中的受主杂质转化成高沸点物质。 将供体杂质和受体杂质转化为高沸点物质后的氯硅烷馏出物送至纯化步骤(104)。 在纯化步骤(104)中,通过使用蒸馏塔等获得供体杂质和受体杂质被彻底除去的高纯度氯硅烷,其中高纯度氯硅烷从塔顶返回到系统外部 。

    Resist pattern, process for the formation of the same, and process for the formation of wiring pattern
    10.
    发明授权
    Resist pattern, process for the formation of the same, and process for the formation of wiring pattern 失效
    抗蚀剂图案,形成相同的工艺,以及形成布线图案的工艺

    公开(公告)号:US06340635B1

    公开(公告)日:2002-01-22

    申请号:US09433891

    申请日:1999-11-04

    IPC分类号: H01L2144

    摘要: A process for the formation of a wiring pattern, which includes the steps of: exposing a resist through a photomask, the photomask having a pattern whose line width is equal to or less than a resolution limit; and developing the exposed resist to form a resist pattern having groove depressions on the surface thereof, the depressions not reaching the back of the resist pattern. The resist may be a positive resist in which case the resist pattern is formed on an underplate feed film; a plating metal is precipitated on the feed film in a region not covered by the resist pattern; the resist pattern is stripped after the precipitation; and the feed film is selectively removed in a region not covered by the plating metal. Alternatively, the resist may be a negative resist in which case the resist pattern is formed on a substrate; a metallic material is deposited on the resist pattern and the substrate; and the resist is stripped from the substrate to remove the overlying metallic material.

    摘要翻译: 一种用于形成布线图案的方法,其包括以下步骤:通过光掩模曝光抗蚀剂,所述光掩模具有线宽度等于或小于分辨率限度的图案; 并且显影所述曝光的抗蚀剂以在其表面上形成具有凹槽凹陷的抗蚀剂图案,所述凹陷未到达所述抗蚀剂图案的背面。 抗蚀剂可以是正性抗蚀剂,在这种情况下,抗蚀剂图案形成在底板进料膜上; 电镀金属在未被抗蚀剂图案覆盖的区域中在进料膜上沉淀; 沉淀后去除抗蚀剂图案; 并且在未被电镀金属覆盖的区域中选择性地除去进料膜。 或者,抗蚀剂可以是负性抗蚀剂,在这种情况下,抗蚀剂图案形成在基材上; 在抗蚀剂图案和基板上沉积金属材料; 并且将抗蚀剂从衬底剥离以除去上覆的金属材料。