MORPHOLOGICAL AND SPATIAL CONTROL OF InP CRYSTAL GROWTH USING CLOSED-SPACED SUBLIMATION
    5.
    发明申请
    MORPHOLOGICAL AND SPATIAL CONTROL OF InP CRYSTAL GROWTH USING CLOSED-SPACED SUBLIMATION 审中-公开
    使用闭合分层的InP晶体生长的形态和空间控制

    公开(公告)号:US20140069499A1

    公开(公告)日:2014-03-13

    申请号:US14014000

    申请日:2013-08-29

    摘要: A new solar cell comprising a substrate, a VIB metal thin film deposited on the substrate, and a polycrystalline III-V semiconductor thin film deposited on the VIB metal thin film.A method of making a solar cell comprising providing a substrate, depositing a VIB metal thin film on the substrate, and depositing a polycrystalline III-V semiconductor thin film on the VIB metal thin film.In one embodiment, a polycrystalline III-V semiconductor thin film comprising Indium Phosphide (InP) is deposited on a VIB metal thin film comprising Molybdenum (Mo) by Metal Organic Chemical Vapor Deposition (MOCVD). In another embodiment, growth of Indium phosphide (InP) crystals directly on metal foils is described using a method comprising a closed-spaced sublimation (CSS). In another embodiment, both InP nanowires and polycrystalline films were obtained by tuning growth conditions. In another embodiment, utilizing a silicon dioxide mask, selective nucleation of InP on metal substrates was obtained.

    摘要翻译: 一种新的太阳能电池,包括基板,沉积在基板上的VIB金属薄膜和沉积在VIB金属薄膜上的多晶III-V半导体薄膜。 一种制造太阳能电池的方法,包括提供衬底,在衬底上沉积VIB金属薄膜,以及在VIB金属薄膜上沉积多晶III-V半导体薄膜。 在一个实施例中,包含磷化铟(InP)的多晶III-V半导体薄膜通过金属有机化学气相沉积(MOCVD)沉积在包含钼(Mo)的VIB金属薄膜上。 在另一个实施方案中,使用包括闭合间隔升华(CSS)的方法来描述直接在金属箔上生长磷化铟(InP)晶体。 在另一个实施方案中,通过调整生长条件获得InP纳米线和多晶膜。 在另一个实施方案中,利用二氧化硅掩模,获得InP在金属基底上的选择性成核。