公开(公告)号：US20050194355A1

公开(公告)日：2005-09-08

申请号：US11109921

申请日：2005-04-19

申请人： Shrikant Lohokare ,  Andras Kuthi ,  Andrew Bailey

发明人： Shrikant Lohokare ,  Andras Kuthi ,  Andrew Bailey

IPC分类号： H05H1/46 ,  C23F1/00 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/32174 ,  H01J37/32431 ,  H01J37/32623

摘要： An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.

摘要翻译： 提供了一种用于调整施加到电感耦合等离子体蚀刻装置的法拉第屏蔽的电压的装置和方法。 适当的电压容易且可变地施加到法拉第屏蔽，使得可以控制等离子体的溅射以防止和减轻不利地影响蚀刻工艺的非挥发性反应产物的沉积。 通过简单地调整调谐电容器，将特定蚀刻工艺或步骤的适当电压施加到法拉第屏蔽。 不需要机械地重新配置蚀刻装置来调节法拉第屏蔽电压。

公开(公告)号：US20060005928A1

公开(公告)日：2006-01-12

申请号：US10966549

申请日：2004-10-15

申请人： Arthur Howald ,  Andras Kuthi ,  Andrew Bailey

发明人： Arthur Howald ,  Andras Kuthi ,  Andrew Bailey

IPC分类号： C23F1/00 ,  G09G3/16 ,  B44C1/22 ,  H01J7/24

CPC分类号： H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

摘要： Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.

公开(公告)号：US20080190448A1

公开(公告)日：2008-08-14

申请号：US11672922

申请日：2007-02-08

申请人： Yunsang Kim ,  Andrew Bailey ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

发明人： Yunsang Kim ,  Andrew Bailey ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

IPC分类号： B08B6/00

CPC分类号： H01L21/02087

摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.

摘要翻译： 提供了用于在晶片的斜面上去除材料的设备。 提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。 中心盖与晶片支撑件间隔开。 第一导电环位于晶片的第一侧并与晶片间隔开。 第二导电环与晶片间隔开。 导电衬套围绕晶片的外边缘。 开关在衬垫和接地之间，允许衬管从接地切换到浮动。

公开(公告)号：US08137501B2

公开(公告)日：2012-03-20

申请号：US11672922

申请日：2007-02-08

申请人： Yunsang Kim ,  Andrew Bailey, III ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

发明人： Yunsang Kim ,  Andrew Bailey, III ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/02087

摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.

摘要翻译： 提供了用于在晶片的斜面上去除材料的设备。 提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。 中心盖与晶片支撑件间隔开。 第一导电环位于晶片的第一侧并与晶片间隔开。 第二导电环与晶片间隔开。 导电衬套围绕晶片的外边缘。 开关在衬垫和接地之间，允许衬管从接地切换到浮动。

公开(公告)号：US20130050892A1

公开(公告)日：2013-02-28

申请号：US13663393

申请日：2012-10-29

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： H01L21/683

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

摘要翻译： 提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。 一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。 在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。 每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。 产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压 信号和脉冲RF偏置电压信号的期望电压值。

公开(公告)号：US08252140B2

公开(公告)日：2012-08-28

申请号：US13084849

申请日：2011-04-12

申请人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Andras Kuthi

发明人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Andras Kuthi

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/02087 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01L21/67069

摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.

摘要翻译： 这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。 在一个示例中，提供了用于晶片斜面边缘清洁的室。 该室包括底部电极，其具有用于在存在时支撑晶片的底部电极表面。 还包括围绕绝缘板的顶边电极。 绝缘板与底部电极相对。 顶边电极电接地并具有向下的L形状。 还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。 下边缘电极被设置成环绕底部电极。 底部边缘电极被定向成与顶部边缘电极的向下的L形相对。

公开(公告)号：US08192576B2

公开(公告)日：2012-06-05

申请号：US11805607

申请日：2007-05-23

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

摘要翻译： 提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。 等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。 电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。 提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。 采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置 以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。 还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

公开(公告)号：US20100181025A1

公开(公告)日：2010-07-22

申请号：US12750612

申请日：2010-03-30

申请人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

IPC分类号： C23F1/08

CPC分类号： H01L21/02087 ,  B08B7/0035

摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

摘要翻译： 提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。 所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。 该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。 当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

公开(公告)号：US20060054279A1

公开(公告)日：2006-03-16

申请号：US10938680

申请日：2004-09-10

申请人： Yunsang Kim ,  Andras Kuthi

发明人： Yunsang Kim ,  Andras Kuthi

IPC分类号： H01L21/306

CPC分类号： H01L21/02071 ,  H01L21/02046 ,  H01L21/31116 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2437

摘要： An apparatus for cleaning a substrate in a reactive ion etch process is disclosed. The apparatus is configured to produce an atmospheric plasma using a RF generation device. The apparatus includes a plasma forming chamber including a cavity defined by a set of interior chamber walls comprised of a dielectric material. The apparatus also includes an atmospheric plasma generated by the RF generation device, the atmospheric plasma protruding from a first end of the cavity to clean the substrate.

摘要翻译： 公开了一种用于在反应离子蚀刻工艺中清洁衬底的设备。 该装置被配置为使用RF产生装置产生大气等离子体。 该装置包括等离子体形成室，其包括由一组由电介质材料组成的内部室壁限定的空腔。 该装置还包括由RF产生装置产生的大气等离子体，大气等离子体从空腔的第一端突出以清洁衬底。

公开(公告)号：US06842147B2

公开(公告)日：2005-01-11

申请号：US10200833

申请日：2002-07-22

申请人： Arthur M. Howald ,  Andras Kuthi ,  Mark Henry Wilcoxson ,  Andrew D. Bailey, III

发明人： Arthur M. Howald ,  Andras Kuthi ,  Mark Henry Wilcoxson ,  Andrew D. Bailey, III

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01Q1/26 ,  H01Q7/00 ,  H01Q11/12 ,  H01Q21/29

CPC分类号： H01J37/321 ,  H01J37/3299 ,  H01Q7/00 ,  H01Q21/29 ,  H05H1/46

摘要： An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.

摘要翻译： 描述了一种用于在等离子体处理装置的处理室的室壁内的等离子体产生区域处产生射频场分布的天线装置。 天线装置包括一个rf感应天线，rf电源可以连接到rf电源，以提供rf电流以产生延伸到等离子体产生区域中的第一rf场。 还提供无源天线，其被感应耦合到rf感应天线并且被配置为生成修改第一rf场的第二rf场。 与没有无源天线的情况相比，等离子体产生区域的射频场分布增加了处理装置的处理均匀性。