公开(公告)号：US20050194355A1

公开(公告)日：2005-09-08

申请号：US11109921

申请日：2005-04-19

申请人： Shrikant Lohokare ,  Andras Kuthi ,  Andrew Bailey

发明人： Shrikant Lohokare ,  Andras Kuthi ,  Andrew Bailey

IPC分类号： H05H1/46 ,  C23F1/00 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/32174 ,  H01J37/32431 ,  H01J37/32623

摘要： An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.

摘要翻译： 提供了一种用于调整施加到电感耦合等离子体蚀刻装置的法拉第屏蔽的电压的装置和方法。 适当的电压容易且可变地施加到法拉第屏蔽，使得可以控制等离子体的溅射以防止和减轻不利地影响蚀刻工艺的非挥发性反应产物的沉积。 通过简单地调整调谐电容器，将特定蚀刻工艺或步骤的适当电压施加到法拉第屏蔽。 不需要机械地重新配置蚀刻装置来调节法拉第屏蔽电压。

公开(公告)号：US20060130758A1

公开(公告)日：2006-06-22

申请号：US11022982

申请日：2004-12-22

申请人： Shrikant Lohokare ,  Andrew Bailey

发明人： Shrikant Lohokare ,  Andrew Bailey

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01J37/32633 ,  C23C16/4404 ,  H01J37/32623

摘要： In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

摘要翻译： 在等离子体处理系统中，公开了一种在等离子体处理室的一组等离子体室表面上减少副产物沉积的方法。 所述方法包括在所述等离子体处理室中设置沉积阻挡层，所述沉积阻挡层被配置为设置在所述等离子体处理室的等离子体产生区域中，从而允许在所述等离子体处理室内等离子体被击中时产生的至少一些过程副产物 以附着到沉积屏障上并减少等离子体处理室表面组上的副产物沉积物。

公开(公告)号：US20070190771A1

公开(公告)日：2007-08-16

申请号：US11732608

申请日：2007-04-03

申请人： Andrew Bailey ,  Shrikant Lohokare

发明人： Andrew Bailey ,  Shrikant Lohokare

IPC分类号： H01L21/44

CPC分类号： H01L21/67051 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/6708 ,  H01L21/76819 ,  H01L21/7684

摘要： A system and method for forming a planar dielectric layer includes identifying a non-planarity in the dielectric layer, forming one or more additional dielectric layers over the dielectric layer and planarizing at least one of the additional dielectric layers wherein the one or more additional dielectric layers include at least one of a spin-on-glass layer and at least one of a low-k dielectric material layer and wherein each one of the one or more additional dielectric layers having a thickness of less than about 1000 angstroms and wherein the one or more additional dielectric layers has a total thickness of between about 1000 and about 4000 angstroms.

摘要翻译： 用于形成平面电介质层的系统和方法包括识别电介质层中的非平面性，在电介质层上形成一个或多个附加的电介质层，并平坦化至少一个附加电介质层，其中一个或多个附加电介质层 包括旋涂玻璃层和低k介电材料层中的至少一个中的至少一个，并且其中所述一个或多个附加电介质层中的每一个具有小于约1000埃的厚度，并且其中所述一个或多个 更多的附加电介质层的总厚度在约1000和约4000埃之间。

公开(公告)号：US20050106848A1

公开(公告)日：2005-05-19

申请号：US10769522

申请日：2004-01-30

申请人： Andrew Bailey ,  Shrikant Lohokare

发明人： Andrew Bailey ,  Shrikant Lohokare

IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC分类号： H01L21/67051 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/6708 ,  H01L21/76819 ,  H01L21/7684

摘要： A system and method for forming a semiconductor in a dual damascene structure including receiving a patterned semiconductor substrate. The semiconductor substrate having a first conductive interconnect material filling multiple features in the pattern. The first conductive interconnect material having an overburden portion. The over burden portion is planarized. The over burden portion is substantially entirely removed in the planarizing process. A mask layer is reduced and a subsequent dielectric layer is formed on the planarized over burden portion. A mask is formed on the subsequent dielectric layer. One or more features are formed in the subsequent dielectric layer and the features are filled with a second conductive interconnect material.

摘要翻译： 一种用于在双镶嵌结构中形成半导体的系统和方法，包括接收图案化的半导体衬底。 半导体衬底具有填充图案中的多个特征的第一导电互连材料。 第一导电互连材料具有覆盖层部分。 过度负载部分被平坦化。 在平坦化处理中基本上完全去除过度负担部分。 掩模层被还原，并且在平坦化的过度部分上形成随后的介电层。 在随后的电介质层上形成掩模。 在随后的介电层中形成一个或多个特征，并且特征填充有第二导电互连材料。

公开(公告)号：US20050093012A1

公开(公告)日：2005-05-05

申请号：US10802460

申请日：2004-03-16

申请人： Andrew Bailey ,  Shrikant Lohokare ,  Arthur Howald ,  Yunsang Kim

发明人： Andrew Bailey ,  Shrikant Lohokare ,  Arthur Howald ,  Yunsang Kim

IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC分类号： B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

摘要翻译： 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：US20060219267A1

公开(公告)日：2006-10-05

申请号：US11444942

申请日：2006-05-31

申请人： Andrew Bailey ,  Shrikant Lohokare ,  Arthur Howald ,  Yunsang Kim

发明人： Andrew Bailey ,  Shrikant Lohokare ,  Arthur Howald ,  Yunsang Kim

IPC分类号： B08B9/00

CPC分类号： B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

摘要翻译： 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：US20050087759A1

公开(公告)日：2005-04-28

申请号：US10769408

申请日：2004-01-30

申请人： Andrew Bailey ,  Shrikant Lohokare

发明人： Andrew Bailey ,  Shrikant Lohokare

IPC分类号： C23G5/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC分类号： H01L21/32115 ,  C23G5/00 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76838 ,  H01L21/7684

摘要： A system and method of passivating an exposed conductive material includes placing a substrate in a process chamber and injecting a hydrogen species into the process chamber. A hydrogen species plasma is formed in the process chamber. A surface layer species is reduced from a top surface of the substrate is reduced. The reduced surface layer species are purged from the process chamber.

摘要翻译： 钝化暴露的导电材料的系统和方法包括将衬底放置在处理室中并将氢物质注入到处理室中。 在处理室中形成氢物质等离子体。 从基板的顶面减少的表面层物质减少。 还原的表面层物质从处理室中清除。

公开(公告)号：US07380982B2

公开(公告)日：2008-06-03

申请号：US11097063

申请日：2005-04-01

申请人： Shrikant Lohokare

发明人： Shrikant Lohokare

IPC分类号： G01K1/00 ,  G01K3/06 ,  G01K3/14 ,  G01K11/20 ,  G01K11/06 ,  G01J5/28

CPC分类号： G01K11/08 ,  G01K11/06

摘要： A temperature sensing component enables accurate in situ temperature measurement. The temperature sensing component is disposed within the process chamber. The temperature sensing component has a cavity, in which a transparent cover is disposed over an opening of the cavity. A material is disposed within the cavity of the temperature sensing component, and a sensor is configured to sense a phase change of the material through the transparent cover.

摘要翻译： 温度传感元件可以准确进行原位温度测量。 温度感测部件设置在处理室内。 温度检测部件具有空腔，透明盖布置在空腔的开口上方。 材料设置在温度感测部件的腔内，并且传感器构造成感测通过透明盖的材料的相位变化。

公开(公告)号：US08277675B2

公开(公告)日：2012-10-02

申请号：US11644779

申请日：2006-12-21

申请人： Seokmin Yun ,  Seong Hwan Cho ,  Shrikant Lohokare ,  Mark Wilcoxson ,  John M. De Larios ,  Stephan Hoffmann

发明人： Seokmin Yun ,  Seong Hwan Cho ,  Shrikant Lohokare ,  Mark Wilcoxson ,  John M. De Larios ,  Stephan Hoffmann

IPC分类号： B44C1/22 ,  B08B7/04

CPC分类号： H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.

摘要翻译： 用于从低k电介质膜层去除损坏的材料的装置，系统和方法包括识别控制化学物质，配置为选择性地从低k电介质膜层去除损坏的材料的控制化学品，损坏的材料在 通过低k电介质膜层形成特征的区域; 建立表征要去除的损坏材料的方面的多个工艺参数，并将控制化学物质应用于低k电介质膜层，控制化学品的应用基于已建立的损坏材料的工艺参数来定义，使得 损坏的材料基本上从特征周围的区域移除，并且特征周围的区域基本上由低k电介质膜层的低k特性限定。

公开(公告)号：US20080025370A1

公开(公告)日：2008-01-31

申请号：US11097063

申请日：2005-04-01

申请人： Shrikant Lohokare

发明人： Shrikant Lohokare

IPC分类号： G01K11/00

CPC分类号： G01K11/08 ,  G01K11/06

摘要： A temperature sensing component enables accurate in situ temperature measurement. The temperature sensing component is disposed within the process chamber. The temperature sensing component has a cavity, in which a transparent cover is disposed over an opening of the cavity. A material is disposed within the cavity of the temperature sensing component, and a sensor is configured to sense a phase change of the material through the transparent cover.