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公开(公告)号：US20120079887A1
公开(公告)日：2012-04-05
申请号：US13110392
申请日：2011-05-18
申请人： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
发明人： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
IPC分类号： G01B7/16
CPC分类号： A61B5/021 , A61B5/02108 , G01B7/24 , G01L1/125
摘要： A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
摘要翻译： 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。
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公开(公告)号：US08760154B2
公开(公告)日：2014-06-24
申请号：US13110392
申请日：2011-05-18
申请人： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
发明人： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
CPC分类号： A61B5/021 , A61B5/02108 , G01B7/24 , G01L1/125
摘要： A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
摘要翻译： 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。
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公开(公告)号：US20110295128A1
公开(公告)日：2011-12-01
申请号：US13045759
申请日：2011-03-11
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Alexander Devin Giddings , Michiko Hara , Shuichi Murakami
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Alexander Devin Giddings , Michiko Hara , Shuichi Murakami
IPC分类号： A61B5/021
CPC分类号： A61B5/02141 , A61B5/0004 , A61B5/021 , A61B5/6824 , A61B5/6833 , A61B2560/0214 , A61B2562/028 , G01L9/16 , G01L19/06 , G01L19/069
摘要： A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.
摘要翻译： 血压传感器包括基板，第一电极，磁化固定层，非磁性层，磁化自由层和第二电极。 弯曲基板至少在第一方向上产生拉伸应力。 第一电极设置在基板上。 磁化固定层具有在第二方向上固定的磁化，并且设置在基板上。 非磁性层设置在磁化固定层上。 磁化自由层具有不同于第一方向和与第一方向垂直的方向的磁化方向。 第二电极设置在无磁化层上。
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公开(公告)号：US08685491B2
公开(公告)日：2014-04-01
申请号：US13186389
申请日：2011-07-19
申请人： Akihiko Takeo , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami , Hideaki Fukuzawa
发明人： Akihiko Takeo , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami , Hideaki Fukuzawa
IPC分类号： G11B5/48
CPC分类号： G11B5/3903 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3983 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01F41/325 , H01L43/12 , Y10T428/1129
摘要： According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.
摘要翻译： 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。
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5.发明授权公开(公告)号：US08649127B2
公开(公告)日：2014-02-11
申请号：US13240062
申请日：2011-09-22
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3929 , G11B5/3983 , G11B2005/3996
摘要： According to one embodiment, a magneto-resistive effect device includes a stacked body, a pair of electrodes for supplying current in a stacking direction of the stacked body. The stacked body includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer, the second magnetic layer, and the spacer layer includes an oxide layer formed from a metal oxide. A crystalline structure of the metal oxide is a NaCl structure.
摘要翻译： 根据一个实施例，磁阻效应装置包括层叠体，用于在层叠体的层叠方向上提供电流的一对电极。 层叠体包括设置在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 第一磁性层，第二磁性层和间隔层中的至少一个包括由金属氧化物形成的氧化物层。 金属氧化物的晶体结构是NaCl结构。
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公开(公告)号：US20120229936A1
公开(公告)日：2012-09-13
申请号：US13481317
申请日：2012-05-25
CPC分类号： G11B5/39 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.
摘要翻译： 根据一个实施例，磁阻效应器件包括：具有盖层的多层结构; 磁化钉扎层; 设置在所述盖层和所述磁化固定层之间的无磁化层; 设置在磁化固定层和无磁化层之间的间隔层; 设置在磁化被钉扎层，磁化被钉扎层和间隔层之间，在间隔层和无磁化层之间，在磁化自由层中，或在磁化自由层和盖层之间的功能层， 具有含有选自Zn，In，Sn和Cd中的至少一种元素的氧化物的功能层和选自Fe，Co和Ni中的至少一种元素; 以及用于垂直于多层结构的膜平面施加电流的一对电极。
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7.发明申请公开(公告)号：US20120212857A1
公开(公告)日：2012-08-23
申请号：US13240062
申请日：2011-09-22
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3929 , G11B5/3983 , G11B2005/3996
摘要： According to one embodiment, a magneto-resistive effect device includes a stacked body, a pair of electrodes for supplying current in a stacking direction of the stacked body. The stacked body includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer, the second magnetic layer, and the spacer layer includes an oxide layer formed from a metal oxide. A crystalline structure of the metal oxide is a NaCl structure.
摘要翻译： 根据一个实施例，磁阻效应装置包括层叠体，用于在层叠体的层叠方向上提供电流的一对电极。 层叠体包括设置在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 第一磁性层，第二磁性层和间隔层中的至少一个包括由金属氧化物形成的氧化物层。 金属氧化物的晶体结构是NaCl结构。
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8.发明申请公开(公告)号：US20100091412A1
公开(公告)日：2010-04-15
申请号：US12585852
申请日：2009-09-25
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
IPC分类号： G11B5/33 , B05D5/12 , C23C16/513 , H05H1/24
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , C23C8/36 , C23C14/081 , C23C14/5833 , C23C14/5873 , G11B5/3163 , G11B2005/3996
摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of helium ions, helium plasma, helium radicals, neon ions, neon plasma and neon radicals on the film submitted to the first treatment.
摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氦离子，氦等离子体，氦原子，氖离子，氖等离子体和氖自由基中的至少一种的气体进行第一处理的第二处理。
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9.发明授权公开(公告)号：US08315020B2
公开(公告)日：2012-11-20
申请号：US12585855
申请日：2009-09-25
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C8/36 , C23C14/5833 , C23C14/584 , C23C14/5846 , C23C14/5853 , G01R33/093 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.
摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 氢原子，氢离子，氢等离子体，氢原子，氘分子，氘原子，氘离子，氘离子和氘原子中的至少一种的气体进行第二次处理。 。
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10.发明申请公开(公告)号：US20120206837A1
公开(公告)日：2012-08-16
申请号：US13233565
申请日：2011-09-15
CPC分类号： H01L43/08 , G01R33/093 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element includes a lamination body and a pair of electrodes. The lamination body includes a first magnetic layer, a second magnetic layer, and a spacer layer. The spacer layer is provided between the first magnetic layer and the second magnetic layer and includes an oxide layer. The oxide layer includes at least one element selected from the group consisting of Zn, In, Sn, and Cd, and at least one element selected from the group consisting of Fe, Co, and Ni.
摘要翻译： 磁阻元件包括层叠体和一对电极。 层压体包括第一磁性层，第二磁性层和间隔层。 间隔层设置在第一磁性层和第二磁性层之间，并且包括氧化物层。 氧化物层包括选自Zn，In，Sn和Cd中的至少一种元素和选自Fe，Co和Ni中的至少一种元素。
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